IT8323930A0 - SUBSTRATE POLARIZATION VOLTAGE REGULATOR CIRCUIT OF A FIELD EFFECT TRANSISTOR INTEGRATED CIRCUIT. - Google Patents

SUBSTRATE POLARIZATION VOLTAGE REGULATOR CIRCUIT OF A FIELD EFFECT TRANSISTOR INTEGRATED CIRCUIT.

Info

Publication number
IT8323930A0
IT8323930A0 IT8323930A IT2393083A IT8323930A0 IT 8323930 A0 IT8323930 A0 IT 8323930A0 IT 8323930 A IT8323930 A IT 8323930A IT 2393083 A IT2393083 A IT 2393083A IT 8323930 A0 IT8323930 A0 IT 8323930A0
Authority
IT
Italy
Prior art keywords
field effect
effect transistor
voltage regulator
polarization voltage
integrated circuit
Prior art date
Application number
IT8323930A
Other languages
Italian (it)
Other versions
IT1220982B (en
Inventor
Paolo Rosini
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT23930/83A priority Critical patent/IT1220982B/en
Publication of IT8323930A0 publication Critical patent/IT8323930A0/en
Priority to FR8418097A priority patent/FR2555774B1/en
Priority to GB08430148A priority patent/GB2151823A/en
Priority to KR1019840007559A priority patent/KR850004357A/en
Priority to DE19843443868 priority patent/DE3443868A1/en
Priority to JP59253930A priority patent/JPS60157248A/en
Application granted granted Critical
Publication of IT1220982B publication Critical patent/IT1220982B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • Automation & Control Theory (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
IT23930/83A 1983-11-30 1983-11-30 CIRCUIT REGULATOR OF THE POLARIZATION VOLTAGE OF THE SUBSTRATE OF AN INTEGRATED CIRCUIT WITH FIELD-EFFECT TRANSISTORS IT1220982B (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT23930/83A IT1220982B (en) 1983-11-30 1983-11-30 CIRCUIT REGULATOR OF THE POLARIZATION VOLTAGE OF THE SUBSTRATE OF AN INTEGRATED CIRCUIT WITH FIELD-EFFECT TRANSISTORS
FR8418097A FR2555774B1 (en) 1983-11-30 1984-11-28 CIRCUIT REGULATOR OF THE POLARIZATION VOLTAGE OF THE SUBSTRATE OF AN INTEGRATED CIRCUIT WITH FIELD EFFECT TRANSISTORS
GB08430148A GB2151823A (en) 1983-11-30 1984-11-29 Polarization voltage regulating circuit for field-effect transistor integrated circuit substrate
KR1019840007559A KR850004357A (en) 1983-11-30 1984-11-30 Circuit for regulating polarization voltage of substrate of field effect transistor integrated circuit
DE19843443868 DE3443868A1 (en) 1983-11-30 1984-11-30 CONTROL CIRCUIT FOR PRELOADING THE SUBSTRATE OF AN INTEGRATED CIRCUIT WITH FIELD EFFECT TRANSISTORS
JP59253930A JPS60157248A (en) 1983-11-30 1984-11-30 Bias voltage regulating circuit of substrate of field effecttransistor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT23930/83A IT1220982B (en) 1983-11-30 1983-11-30 CIRCUIT REGULATOR OF THE POLARIZATION VOLTAGE OF THE SUBSTRATE OF AN INTEGRATED CIRCUIT WITH FIELD-EFFECT TRANSISTORS

Publications (2)

Publication Number Publication Date
IT8323930A0 true IT8323930A0 (en) 1983-11-30
IT1220982B IT1220982B (en) 1990-06-21

Family

ID=11210957

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23930/83A IT1220982B (en) 1983-11-30 1983-11-30 CIRCUIT REGULATOR OF THE POLARIZATION VOLTAGE OF THE SUBSTRATE OF AN INTEGRATED CIRCUIT WITH FIELD-EFFECT TRANSISTORS

Country Status (6)

Country Link
JP (1) JPS60157248A (en)
KR (1) KR850004357A (en)
DE (1) DE3443868A1 (en)
FR (1) FR2555774B1 (en)
GB (1) GB2151823A (en)
IT (1) IT1220982B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4794278A (en) * 1987-12-30 1988-12-27 Intel Corporation Stable substrate bias generator for MOS circuits
FR2677771A1 (en) * 1991-06-17 1992-12-18 Samsung Electronics Co Ltd Circuit for detecting the level of reverse bias in a semiconductor memory device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0015342B1 (en) * 1979-03-05 1984-01-25 Motorola, Inc. Substrate bias regulator
JPS6033314B2 (en) * 1979-11-22 1985-08-02 富士通株式会社 Substrate bias voltage generation circuit
JPS5694654A (en) * 1979-12-27 1981-07-31 Toshiba Corp Generating circuit for substrate bias voltage
US4322675A (en) * 1980-11-03 1982-03-30 Fairchild Camera & Instrument Corp. Regulated MOS substrate bias voltage generator for a static random access memory

Also Published As

Publication number Publication date
GB8430148D0 (en) 1985-01-09
IT1220982B (en) 1990-06-21
FR2555774A1 (en) 1985-05-31
GB2151823A (en) 1985-07-24
JPS60157248A (en) 1985-08-17
KR850004357A (en) 1985-07-11
FR2555774B1 (en) 1989-01-13
DE3443868A1 (en) 1985-06-13

Similar Documents

Publication Publication Date Title
ITRM910287A0 (en) REFERENCE VOLTAGE GENERATION CIRCUIT OF A SEMICONDUCTOR MEMORY DEVICE.
IT1206967B (en) PROCEDURE FOR THE PRODUCTION OF SEMICONDUCTOR DEVICES AS INTEGRATED CIRCUITS AND FIELD-EFFECT TRANSISTORS ON SILICON MONOCRI STALLINO
IT1195018B (en) INTEGRATED CIRCUIT WITH DETECTION OF THE LEVEL OF THE SUPPLY VOLTAGE
IT1140065B (en) SEMICONDUCTOR INTEGRATED CIRCUIT
IT8125210A0 (en) VOLTAGE LIMITING CIRCUIT
IT8323279A0 (en) CIRCUIT FOR THE PRODUCTION OF A REFERENCE VOLTAGE.
IT1090802B (en) CIRCUIT ARRANGEMENT FOR THE DELIMITATION OF THE VOLTAGE
IT1122514B (en) REVERSE POLARIZATION VOLTAGE GENERATING CIRCUIT OF DOOR
IT1209167B (en) DEVICE FOR THE PROTECTION OF CIRCUITS IN CASE OF DECREASES OF THE CONTINUOUS SUPPLY VOLTAGE.
IT1085678B (en) STATIC INDUCTION TRANSISTOR SEMICONDUCTOR INTEGRATED LOGIC CIRCUIT
IT8323930A0 (en) SUBSTRATE POLARIZATION VOLTAGE REGULATOR CIRCUIT OF A FIELD EFFECT TRANSISTOR INTEGRATED CIRCUIT.
IT8723162A0 (en) CIRCUIT FOR MAINTAINING A MOS TRANSISTOR IN CONDUCTION IN THE LACK OF ELECTRICAL SUPPLY VOLTAGE.
ES2022140B3 (en) QUICK OPERATION CIRCUIT OF TRANSISTORS WITH POWER FIELD EFFECT.
IT1199796B (en) VOLTAGE LIMITER CIRCUIT
IT7928204A0 (en) DIELECTRICALLY ISOLATED COMPLEMENTARY INTEGRATED CIRCUIT TRANSISTORS FOR USE AT HIGH VOLTAGES.
DE3165313D1 (en) Semiconductor memory device with substrate voltage biasing
IT1135215B (en) CONSTANT CURRENT SOURCE CIRCUIT, STABILIZED AGAINST VOLTAGE AND TEMPERATURE
IT8119502A0 (en) HIGH DISCHARGE VOLTAGE SEMICONDUCTOR DEVICE.
IT1123891B (en) CIRCUIT FOR FIXING THE LEVEL OF A VOLTAGE
ES8304365A1 (en) Circuit arrangement with an integrated circuit.
IT1110163B (en) CIRCUIT FOR BLOCKING OF THE DETECTION VOLTAGE
DE3164950D1 (en) INTEGRATED MOS SEMICONDUCTOR CIRCUIT
EP0160183A3 (en) High voltage mos field effect transistor
IT8122193A0 (en) VOLTAGE DIVIDER CIRCUIT.
IT8067609A0 (en) VITAL VOLTAGE REGULATOR AND PHASE OFF CIRCUIT DEVICE

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971129