IT8124331A0 - Metodo per creare una struttura a metallizzazione dielettrico. - Google Patents
Metodo per creare una struttura a metallizzazione dielettrico.Info
- Publication number
- IT8124331A0 IT8124331A0 IT8124331A IT2433181A IT8124331A0 IT 8124331 A0 IT8124331 A0 IT 8124331A0 IT 8124331 A IT8124331 A IT 8124331A IT 2433181 A IT2433181 A IT 2433181A IT 8124331 A0 IT8124331 A0 IT 8124331A0
- Authority
- IT
- Italy
- Prior art keywords
- creating
- metallization structure
- dielectric metallization
- dielectric
- metallization
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/68—Organic materials, e.g. photoresists
- H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/412—Deposition of metallic or metal-silicide materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US20176780A | 1980-10-29 | 1980-10-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8124331A0 true IT8124331A0 (it) | 1981-10-05 |
| IT1153991B IT1153991B (it) | 1987-01-21 |
Family
ID=22747208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT24331/81A IT1153991B (it) | 1980-10-29 | 1981-10-05 | Metodo per creare una struttura a metallizzazione dielettrico |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS57102023A (it) |
| DE (1) | DE3141680A1 (it) |
| IT (1) | IT1153991B (it) |
| SE (1) | SE8105918L (it) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5925246A (ja) * | 1982-08-02 | 1984-02-09 | Nec Corp | 半導体装置の製造方法 |
| DE3231457A1 (de) * | 1982-08-24 | 1984-03-01 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum erzeugen von strukturen fuer integrierte halbleiterschaltungen durch reaktives ionenaetzen |
| DE3234907A1 (de) * | 1982-09-21 | 1984-03-22 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen einer monolithisch integrierten schaltung |
| JPS5955037A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Ltd | 半導体装置 |
| DE3328339A1 (de) * | 1983-08-05 | 1985-02-14 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur metallisierung einer kunststoffoberflaeche |
| DE3429082A1 (de) * | 1984-08-07 | 1986-02-27 | Siemens AG, 1000 Berlin und 8000 München | Steuerscheibe fuer gasentladungsanzeige |
| JPH0789551B2 (ja) * | 1986-02-13 | 1995-09-27 | 日本電気株式会社 | 半導体装置 |
| DE3615519A1 (de) * | 1986-05-07 | 1987-11-12 | Siemens Ag | Verfahren zum erzeugen von kontaktloechern mit abgeschraegten flanken in zwischenoxidschichten |
| EP0540261B1 (en) * | 1991-10-31 | 1997-05-28 | STMicroelectronics, Inc. | Process of removing polymers in semiconductor vias |
| DE4311807C2 (de) * | 1993-04-03 | 1998-03-19 | Atotech Deutschland Gmbh | Verfahren zur Beschichtung von Metallen und Anwendung des Verfahrens in der Leiterplattentechnik |
| US5597983A (en) * | 1994-02-03 | 1997-01-28 | Sgs-Thomson Microelectronics, Inc. | Process of removing polymers in semiconductor vias |
| US20040209190A1 (en) * | 2000-12-22 | 2004-10-21 | Yoshiaki Mori | Pattern forming method and apparatus used for semiconductor device, electric circuit, display module, and light emitting device |
-
1981
- 1981-10-05 IT IT24331/81A patent/IT1153991B/it active
- 1981-10-07 SE SE8105918A patent/SE8105918L/ not_active Application Discontinuation
- 1981-10-21 DE DE19813141680 patent/DE3141680A1/de not_active Withdrawn
- 1981-10-26 JP JP56171941A patent/JPS57102023A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IT1153991B (it) | 1987-01-21 |
| JPS57102023A (en) | 1982-06-24 |
| DE3141680A1 (de) | 1982-06-16 |
| SE8105918L (sv) | 1982-04-30 |
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