IT1403667B1 - Dispositivo di memoria con misurazione interna di parametri funzionali - Google Patents

Dispositivo di memoria con misurazione interna di parametri funzionali

Info

Publication number
IT1403667B1
IT1403667B1 ITMI2011A000120A ITMI20110120A IT1403667B1 IT 1403667 B1 IT1403667 B1 IT 1403667B1 IT MI2011A000120 A ITMI2011A000120 A IT MI2011A000120A IT MI20110120 A ITMI20110120 A IT MI20110120A IT 1403667 B1 IT1403667 B1 IT 1403667B1
Authority
IT
Italy
Prior art keywords
memory device
functional parameters
internal measurement
measurement
internal
Prior art date
Application number
ITMI2011A000120A
Other languages
English (en)
Inventor
Maurizio Francesco Perroni
Castagnagiuseppe
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITMI2011A000120A priority Critical patent/IT1403667B1/it
Priority to US13/361,578 priority patent/US9646717B2/en
Publication of ITMI20110120A1 publication Critical patent/ITMI20110120A1/it
Application granted granted Critical
Publication of IT1403667B1 publication Critical patent/IT1403667B1/it
Priority to US15/484,500 priority patent/US10720223B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/023—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in clock generator or timing circuitry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/3187—Built-in tests
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/22—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing
    • G06F11/2289—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing by configuration test
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/30—Monitoring
    • G06F11/3003—Monitoring arrangements specially adapted to the computing system or computing system component being monitored
    • G06F11/3037—Monitoring arrangements specially adapted to the computing system or computing system component being monitored where the computing system component is a memory, e.g. virtual memory, cache
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50012—Marginal testing, e.g. race, voltage or current testing of timing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • G11C29/56012—Timing aspects, clock generation, synchronisation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/30—Monitoring
    • G06F11/34—Recording or statistical evaluation of computer activity, e.g. of down time, of input/output operation ; Recording or statistical evaluation of user activity, e.g. usability assessment
    • G06F11/3466—Performance evaluation by tracing or monitoring
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Computing Systems (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Tests Of Electronic Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
ITMI2011A000120A 2011-01-31 2011-01-31 Dispositivo di memoria con misurazione interna di parametri funzionali IT1403667B1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
ITMI2011A000120A IT1403667B1 (it) 2011-01-31 2011-01-31 Dispositivo di memoria con misurazione interna di parametri funzionali
US13/361,578 US9646717B2 (en) 2011-01-31 2012-01-30 Memory device with internal measurement of functional parameters
US15/484,500 US10720223B2 (en) 2011-01-31 2017-04-11 Memory device with internal measurement of functional parameters

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI2011A000120A IT1403667B1 (it) 2011-01-31 2011-01-31 Dispositivo di memoria con misurazione interna di parametri funzionali

Publications (2)

Publication Number Publication Date
ITMI20110120A1 ITMI20110120A1 (it) 2012-08-01
IT1403667B1 true IT1403667B1 (it) 2013-10-31

Family

ID=43975453

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI2011A000120A IT1403667B1 (it) 2011-01-31 2011-01-31 Dispositivo di memoria con misurazione interna di parametri funzionali

Country Status (2)

Country Link
US (2) US9646717B2 (it)
IT (1) IT1403667B1 (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1403667B1 (it) * 2011-01-31 2013-10-31 St Microelectronics Srl Dispositivo di memoria con misurazione interna di parametri funzionali
CN108459932A (zh) * 2018-03-02 2018-08-28 郑州云海信息技术有限公司 一种管理raid卡的方法、装置以及设备

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4128892A (en) * 1977-09-07 1978-12-05 Fairchild Camera And Instrument Corporation Pulse width measurement circuitry
KR19990069337A (ko) * 1998-02-06 1999-09-06 윤종용 복합 반도체 메모리장치의자기 테스트 회로 및 이를 이용한 자기 테스트 방법
DE10125371A1 (de) * 2001-05-23 2002-12-12 Infineon Technologies Ag Halbleiterspeicher und Verfahren zum Betrieb des Halbleiterspeichers
WO2003088485A1 (en) * 2002-04-10 2003-10-23 The Johns Hopkins University The time of flight system on a chip
TWI229343B (en) * 2002-11-27 2005-03-11 Univ Tsinghua Embedded memory access time measurement method and device
JP4266358B2 (ja) * 2004-04-12 2009-05-20 三菱電機株式会社 車載電子制御装置
KR100825779B1 (ko) * 2006-09-28 2008-04-29 삼성전자주식회사 반도체 메모리장치 및 이에 대한 웨이퍼 레벨 테스트 방법
KR101184953B1 (ko) * 2007-12-21 2012-10-02 램버스 인코포레이티드 플래시 메모리 타이밍 사전-특성화
US20100061207A1 (en) * 2008-09-09 2010-03-11 Seagate Technology Llc Data storage device including self-test features
JP5579979B2 (ja) * 2008-10-30 2014-08-27 ピーエスフォー ルクスコ エスエイアールエル 半導体装置、内部信号タイミング回路、及び遅延時間測定方法
US8553503B2 (en) * 2008-12-31 2013-10-08 Intel Corporation On-die signal timing measurement
US8386895B2 (en) * 2010-05-19 2013-02-26 Micron Technology, Inc. Enhanced multilevel memory
IT1403667B1 (it) * 2011-01-31 2013-10-31 St Microelectronics Srl Dispositivo di memoria con misurazione interna di parametri funzionali

Also Published As

Publication number Publication date
US9646717B2 (en) 2017-05-09
US10720223B2 (en) 2020-07-21
ITMI20110120A1 (it) 2012-08-01
US20170221580A1 (en) 2017-08-03
US20120197581A1 (en) 2012-08-02

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