IT1265414B1 - Process for making metalised openings in dielectric substrates containing interconnected conductive and/or resistive segments in thin film - Google Patents

Process for making metalised openings in dielectric substrates containing interconnected conductive and/or resistive segments in thin film

Info

Publication number
IT1265414B1
IT1265414B1 IT93MI002697A ITMI932697A IT1265414B1 IT 1265414 B1 IT1265414 B1 IT 1265414B1 IT 93MI002697 A IT93MI002697 A IT 93MI002697A IT MI932697 A ITMI932697 A IT MI932697A IT 1265414 B1 IT1265414 B1 IT 1265414B1
Authority
IT
Italy
Prior art keywords
metalised
openings
thin film
making
gold
Prior art date
Application number
IT93MI002697A
Other languages
Italian (it)
Inventor
Massimo Bertolotti
Giorgio Carcano
Anna Carminati
Maurizio Ceriani
Original Assignee
Sits Soc It Telecom Siemens
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sits Soc It Telecom Siemens filed Critical Sits Soc It Telecom Siemens
Priority to IT93MI002697A priority Critical patent/IT1265414B1/en
Publication of ITMI932697A0 publication Critical patent/ITMI932697A0/en
Priority to EP94117039A priority patent/EP0670668B1/en
Priority to AT94117039T priority patent/ATE162924T1/en
Priority to DE69408298T priority patent/DE69408298D1/en
Publication of ITMI932697A1 publication Critical patent/ITMI932697A1/en
Application granted granted Critical
Publication of IT1265414B1 publication Critical patent/IT1265414B1/en

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  • Parts Printed On Printed Circuit Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A process is described for making metalised openings in dielectric substrates containing conductive and/or resistive segments pertaining to thin film hybrid circuits for microwave applications. The process comprises the phases of deposition of superimposed layers of TaN, Ti and Pd on the front surface; photomasking and depositing of gold along established pathways; removal of TaN, Ti and Pd outside of said pathways; photoengraving of gold, Pd and Ti at the resistors; drilling holes in zones lacking metal; vacuum sputtering of Ti and Pd on the front side and back side; depositing of a negative photoresist on the front side, photomasking of circular zones superimposed on the holes and partially on the conductive segments; developing, and addition of gold by galvanic means; elimination of the residual photoresist; selective chemical attack to eliminate the excess Pd and Ti. <IMAGE>
IT93MI002697A 1993-12-22 1993-12-22 Process for making metalised openings in dielectric substrates containing interconnected conductive and/or resistive segments in thin film IT1265414B1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT93MI002697A IT1265414B1 (en) 1993-12-22 1993-12-22 Process for making metalised openings in dielectric substrates containing interconnected conductive and/or resistive segments in thin film
EP94117039A EP0670668B1 (en) 1993-12-22 1994-10-27 Process for the provision of metallized holes in dielectric substrates comprising interconnected thin film conductive and/or resistive paths
AT94117039T ATE162924T1 (en) 1993-12-22 1994-10-27 METHOD FOR PRODUCING METALIZED HOLES IN DIELECTRIC SUBSTRATES WITH INTERCONNECTED THIN FILM CONDUCTOR AND/OR RESISTANCE TRACKS
DE69408298T DE69408298D1 (en) 1993-12-22 1994-10-27 Process for producing metallized holes in dielectric substrates with interconnected thin-film conductor and / or resistance tracks

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT93MI002697A IT1265414B1 (en) 1993-12-22 1993-12-22 Process for making metalised openings in dielectric substrates containing interconnected conductive and/or resistive segments in thin film

Publications (3)

Publication Number Publication Date
ITMI932697A0 ITMI932697A0 (en) 1993-12-22
ITMI932697A1 ITMI932697A1 (en) 1995-06-22
IT1265414B1 true IT1265414B1 (en) 1996-11-22

Family

ID=11367380

Family Applications (1)

Application Number Title Priority Date Filing Date
IT93MI002697A IT1265414B1 (en) 1993-12-22 1993-12-22 Process for making metalised openings in dielectric substrates containing interconnected conductive and/or resistive segments in thin film

Country Status (1)

Country Link
IT (1) IT1265414B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111276443B (en) * 2020-02-10 2023-03-14 中国电子科技集团公司第十三研究所 Preparation method of microwave thin film hybrid integrated circuit

Also Published As

Publication number Publication date
ITMI932697A0 (en) 1993-12-22
ITMI932697A1 (en) 1995-06-22

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961218