IT1195248B - Laser a semiconduttore presentante una guida d'onda laterale con indice positivo - Google Patents
Laser a semiconduttore presentante una guida d'onda laterale con indice positivoInfo
- Publication number
- IT1195248B IT1195248B IT25740/81A IT2574081A IT1195248B IT 1195248 B IT1195248 B IT 1195248B IT 25740/81 A IT25740/81 A IT 25740/81A IT 2574081 A IT2574081 A IT 2574081A IT 1195248 B IT1195248 B IT 1195248B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor laser
- wave guide
- positive index
- lateral wave
- lateral
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
- H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/257,773 US4383320A (en) | 1981-04-27 | 1981-04-27 | Positive index lateral waveguide semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8125740A0 IT8125740A0 (it) | 1981-12-21 |
| IT1195248B true IT1195248B (it) | 1988-10-12 |
Family
ID=22977694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT25740/81A IT1195248B (it) | 1981-04-27 | 1981-12-21 | Laser a semiconduttore presentante una guida d'onda laterale con indice positivo |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4383320A (it) |
| JP (1) | JPS57180193A (it) |
| CA (1) | CA1177150A (it) |
| DE (1) | DE3150540A1 (it) |
| GB (1) | GB2098385B (it) |
| IT (1) | IT1195248B (it) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4426701A (en) | 1981-12-23 | 1984-01-17 | Rca Corporation | Constricted double heterostructure semiconductor laser |
| US4523316A (en) * | 1982-10-29 | 1985-06-11 | Rca Corporation | Semiconductor laser with non-absorbing mirror facet |
| US4569054A (en) * | 1983-06-17 | 1986-02-04 | Rca Corporation | Double heterostructure laser |
| US4642143A (en) * | 1983-06-17 | 1987-02-10 | Rca Corporation | Method of making a double heterostructure laser |
| US4581742A (en) * | 1984-04-10 | 1986-04-08 | Rca Corporation | Semiconductor laser having a non-absorbing passive region with beam guiding |
| JPS6184087A (ja) * | 1984-10-02 | 1986-04-28 | Agency Of Ind Science & Technol | 多重量子井戸半導体レ−ザ及びその製造方法 |
| FR2575870B1 (fr) * | 1985-01-10 | 1987-01-30 | Sermage Bernard | Laser a semi-conducteur muni de moyens de reinjection de l'emission spontanee dans la couche active |
| US20030219053A1 (en) * | 2002-05-21 | 2003-11-27 | The Board Of Trustees Of The University Of Illinois | Index guided laser structure |
| JP4780993B2 (ja) * | 2005-03-31 | 2011-09-28 | 三洋電機株式会社 | 半導体レーザ素子およびその製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE788374A (fr) * | 1971-12-08 | 1973-01-02 | Rca Corp | Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat |
| US4033796A (en) * | 1975-06-23 | 1977-07-05 | Xerox Corporation | Method of making buried-heterostructure diode injection laser |
| US4178564A (en) * | 1976-01-15 | 1979-12-11 | Rca Corporation | Half wave protection layers on injection lasers |
| US4092659A (en) * | 1977-04-28 | 1978-05-30 | Rca Corporation | Multi-layer reflector for electroluminescent device |
| US4215319A (en) * | 1979-01-17 | 1980-07-29 | Rca Corporation | Single filament semiconductor laser |
| US4347486A (en) * | 1979-10-12 | 1982-08-31 | Rca Corporation | Single filament semiconductor laser with large emitting area |
| US4335461A (en) * | 1980-08-25 | 1982-06-15 | Xerox Corporation | Injection lasers with lateral spatial thickness variations (LSTV) in the active layer |
-
1981
- 1981-04-27 US US06/257,773 patent/US4383320A/en not_active Expired - Lifetime
- 1981-12-14 CA CA000392206A patent/CA1177150A/en not_active Expired
- 1981-12-16 GB GB8137950A patent/GB2098385B/en not_active Expired
- 1981-12-21 IT IT25740/81A patent/IT1195248B/it active
- 1981-12-21 DE DE19813150540 patent/DE3150540A1/de not_active Withdrawn
- 1981-12-25 JP JP56216004A patent/JPS57180193A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB2098385A (en) | 1982-11-17 |
| IT8125740A0 (it) | 1981-12-21 |
| GB2098385B (en) | 1984-12-05 |
| JPS57180193A (en) | 1982-11-06 |
| CA1177150A (en) | 1984-10-30 |
| US4383320A (en) | 1983-05-10 |
| DE3150540A1 (de) | 1982-11-11 |
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