IT1185287B - Metodo e apparecchiatura per fondere ed evaporare silicio per applicazioni ad alta purezza - Google Patents
Metodo e apparecchiatura per fondere ed evaporare silicio per applicazioni ad alta purezzaInfo
- Publication number
- IT1185287B IT1185287B IT21642/85A IT2164285A IT1185287B IT 1185287 B IT1185287 B IT 1185287B IT 21642/85 A IT21642/85 A IT 21642/85A IT 2164285 A IT2164285 A IT 2164285A IT 1185287 B IT1185287 B IT 1185287B
- Authority
- IT
- Italy
- Prior art keywords
- melting
- equipment
- high purity
- purity applications
- evaporating silicon
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B7/00—Heating by electric discharge
- H05B7/18—Heating by arc discharge
- H05B7/20—Direct heating by arc discharge, i.e. where at least one end of the arc directly acts on the material to be heated, including additional resistance heating by arc current flowing through the material to be heated
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/633,124 US4548670A (en) | 1984-07-20 | 1984-07-20 | Silicon melting and evaporation method for high purity applications |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8521642A0 IT8521642A0 (it) | 1985-07-19 |
IT1185287B true IT1185287B (it) | 1987-11-04 |
Family
ID=24538365
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT21642/85A IT1185287B (it) | 1984-07-20 | 1985-07-19 | Metodo e apparecchiatura per fondere ed evaporare silicio per applicazioni ad alta purezza |
Country Status (9)
Country | Link |
---|---|
US (1) | US4548670A (it) |
JP (1) | JPS6163513A (it) |
CA (1) | CA1240482A (it) |
DE (1) | DE3525177A1 (it) |
FR (1) | FR2567918A1 (it) |
GB (1) | GB2162766B (it) |
IL (1) | IL75715A (it) |
IT (1) | IT1185287B (it) |
SE (1) | SE8503405L (it) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2248852A (en) * | 1990-10-16 | 1992-04-22 | Secr Defence | Vapour deposition |
JP2792483B2 (ja) * | 1995-10-26 | 1998-09-03 | 日本電気株式会社 | 半導体製造装置 |
US6126742A (en) * | 1996-09-20 | 2000-10-03 | Forshungszentrum Karlsruhe Gmbh | Method of drawing single crystals |
DE19638563C2 (de) * | 1996-09-20 | 1999-07-08 | Karlsruhe Forschzent | Verfahren zum Ziehen von Einkristallen |
US6632277B2 (en) | 1999-07-14 | 2003-10-14 | Seh America, Inc. | Optimized silicon wafer gettering for advanced semiconductor devices |
US6395085B2 (en) | 1999-07-14 | 2002-05-28 | Seh America, Inc. | Purity silicon wafer for use in advanced semiconductor devices |
US6454852B2 (en) | 1999-07-14 | 2002-09-24 | Seh America, Inc. | High efficiency silicon wafer optimized for advanced semiconductor devices |
US6228165B1 (en) * | 1999-07-28 | 2001-05-08 | Seh America, Inc. | Method of manufacturing crystal of silicon using an electric potential |
JP2007010501A (ja) * | 2005-06-30 | 2007-01-18 | Herzog Japan Ltd | ガラスビード作製装置及び方法 |
WO2010025163A1 (en) * | 2008-08-27 | 2010-03-04 | Bp Corporation North America Inc. | Apparatus and method of direct electric melting a feedstock |
WO2011063795A1 (de) | 2009-11-24 | 2011-06-03 | Forschungsverbund Berlin E. V. | Verfahren und vorrichtung zur herstellung von einkristallen aus halbleitermaterial |
WO2011099110A1 (ja) * | 2010-02-09 | 2011-08-18 | Kaneko Kyojiro | シリコン真空溶解法 |
CN102275927A (zh) * | 2011-06-01 | 2011-12-14 | 邓小宝 | 燃气电弧双热式蓄热余热废气回燃环保节能高效炼硅炉 |
DE102013205225A1 (de) * | 2013-03-25 | 2014-09-25 | Wacker Chemie Ag | Herstellung von Silicium enthaltenden nano- und mikrometerskaligen Partikeln |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE542056A (it) * | 1954-10-15 | |||
US3160497A (en) * | 1962-11-15 | 1964-12-08 | Loung Pai Yen | Method of melting refractory metals using a double heating process |
DE1243641B (de) * | 1962-12-12 | 1967-07-06 | Siemens Ag | Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze |
US3392056A (en) * | 1964-10-26 | 1968-07-09 | Irc Inc | Method of making single crystal films and the product resulting therefrom |
US3625660A (en) * | 1968-03-18 | 1971-12-07 | Massachusetts Inst Technology | Method and structure for growing crystals |
US4165361A (en) * | 1975-11-28 | 1979-08-21 | Milstein Joseph B | Process and apparatus for preparation of single crystals and textured polycrystals |
-
1984
- 1984-07-20 US US06/633,124 patent/US4548670A/en not_active Expired - Fee Related
-
1985
- 1985-06-24 CA CA000484991A patent/CA1240482A/en not_active Expired
- 1985-07-03 IL IL75715A patent/IL75715A/xx unknown
- 1985-07-09 SE SE8503405A patent/SE8503405L/ not_active Application Discontinuation
- 1985-07-12 JP JP60153897A patent/JPS6163513A/ja active Granted
- 1985-07-15 DE DE19853525177 patent/DE3525177A1/de not_active Withdrawn
- 1985-07-19 FR FR8511416A patent/FR2567918A1/fr not_active Withdrawn
- 1985-07-19 IT IT21642/85A patent/IT1185287B/it active
- 1985-07-22 GB GB08518400A patent/GB2162766B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPH0116765B2 (it) | 1989-03-27 |
GB2162766B (en) | 1987-10-28 |
DE3525177A1 (de) | 1986-01-23 |
JPS6163513A (ja) | 1986-04-01 |
GB8518400D0 (en) | 1985-08-29 |
GB2162766A (en) | 1986-02-12 |
US4548670A (en) | 1985-10-22 |
IL75715A (en) | 1989-06-30 |
FR2567918A1 (fr) | 1986-01-24 |
SE8503405L (sv) | 1986-01-21 |
IT8521642A0 (it) | 1985-07-19 |
SE8503405D0 (sv) | 1985-07-09 |
IL75715A0 (en) | 1985-11-29 |
CA1240482A (en) | 1988-08-16 |
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