IT1175603B - IMPROVEMENTS IN PROCESSES TO APPLY A SEMICONDUCTIVE MATERIAL ON A SUBSTRATE - Google Patents

IMPROVEMENTS IN PROCESSES TO APPLY A SEMICONDUCTIVE MATERIAL ON A SUBSTRATE

Info

Publication number
IT1175603B
IT1175603B IT22345/84A IT2234584A IT1175603B IT 1175603 B IT1175603 B IT 1175603B IT 22345/84 A IT22345/84 A IT 22345/84A IT 2234584 A IT2234584 A IT 2234584A IT 1175603 B IT1175603 B IT 1175603B
Authority
IT
Italy
Prior art keywords
apply
processes
substrate
semiconductive material
semiconductive
Prior art date
Application number
IT22345/84A
Other languages
Italian (it)
Other versions
IT8422345A0 (en
Inventor
Peter William Fry
Original Assignee
Transamerica Delaval Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Transamerica Delaval Inc filed Critical Transamerica Delaval Inc
Publication of IT8422345A0 publication Critical patent/IT8422345A0/en
Application granted granted Critical
Publication of IT1175603B publication Critical patent/IT1175603B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
IT22345/84A 1983-08-18 1984-08-17 IMPROVEMENTS IN PROCESSES TO APPLY A SEMICONDUCTIVE MATERIAL ON A SUBSTRATE IT1175603B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB838322273A GB8322273D0 (en) 1983-08-18 1983-08-18 Applying semiconductor material to substrate

Publications (2)

Publication Number Publication Date
IT8422345A0 IT8422345A0 (en) 1984-08-17
IT1175603B true IT1175603B (en) 1987-07-15

Family

ID=10547502

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22345/84A IT1175603B (en) 1983-08-18 1984-08-17 IMPROVEMENTS IN PROCESSES TO APPLY A SEMICONDUCTIVE MATERIAL ON A SUBSTRATE

Country Status (5)

Country Link
DE (1) DE3430379A1 (en)
FR (1) FR2550885A1 (en)
GB (2) GB8322273D0 (en)
IT (1) IT1175603B (en)
NL (1) NL8402533A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19645083C2 (en) * 1996-11-01 2000-01-27 Austria Card Gmbh Wien Contactless chip card with transponder coil
US8044472B2 (en) 2003-03-25 2011-10-25 Kulite Semiconductor Products, Inc. Nanotube and graphene semiconductor structures with varying electrical properties

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1465112A1 (en) * 1963-10-04 1969-01-23 Anritsu Electric Company Ltd Semiconductor layers deposited in a vacuum for elasto resistance elements
GB1244551A (en) * 1969-02-28 1971-09-02 British Aircraft Corp Ltd Improvements relating to acoustic detector arrays
US3673354A (en) * 1969-05-08 1972-06-27 Matsushita Electric Ind Co Ltd Semiconductor stress transducer
JPS5438491B1 (en) * 1969-09-22 1979-11-21
US3805601A (en) * 1972-07-28 1974-04-23 Bell & Howell Co High sensitivity semiconductor strain gauge

Also Published As

Publication number Publication date
DE3430379A1 (en) 1985-03-07
GB8420903D0 (en) 1984-09-19
NL8402533A (en) 1985-03-18
FR2550885A1 (en) 1985-02-22
GB8322273D0 (en) 1983-09-21
GB2145284B (en) 1987-05-28
IT8422345A0 (en) 1984-08-17
GB2145284A (en) 1985-03-20

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