IT1166699B - Apparecchiatura per l'indirizzamento di memorie ad alta densita' di celle - Google Patents

Apparecchiatura per l'indirizzamento di memorie ad alta densita' di celle

Info

Publication number
IT1166699B
IT1166699B IT21030/79A IT2103079A IT1166699B IT 1166699 B IT1166699 B IT 1166699B IT 21030/79 A IT21030/79 A IT 21030/79A IT 2103079 A IT2103079 A IT 2103079A IT 1166699 B IT1166699 B IT 1166699B
Authority
IT
Italy
Prior art keywords
high density
density cell
cell memories
addressing high
addressing
Prior art date
Application number
IT21030/79A
Other languages
English (en)
Other versions
IT7921030A0 (it
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT7921030A0 publication Critical patent/IT7921030A0/it
Application granted granted Critical
Publication of IT1166699B publication Critical patent/IT1166699B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
IT21030/79A 1978-04-03 1979-03-16 Apparecchiatura per l'indirizzamento di memorie ad alta densita' di celle IT1166699B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/892,605 US4160275A (en) 1978-04-03 1978-04-03 Accessing arrangement for memories with small cells

Publications (2)

Publication Number Publication Date
IT7921030A0 IT7921030A0 (it) 1979-03-16
IT1166699B true IT1166699B (it) 1987-05-06

Family

ID=25400218

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21030/79A IT1166699B (it) 1978-04-03 1979-03-16 Apparecchiatura per l'indirizzamento di memorie ad alta densita' di celle

Country Status (5)

Country Link
US (1) US4160275A (it)
EP (1) EP0004557B1 (it)
JP (1) JPS5916355B2 (it)
DE (1) DE2961587D1 (it)
IT (1) IT1166699B (it)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2919166C2 (de) * 1978-05-12 1986-01-02 Nippon Electric Co., Ltd., Tokio/Tokyo Speichervorrichtung
DE2842547A1 (de) * 1978-09-29 1980-04-10 Siemens Ag Schaltungsanordnung zum lesen und regenerieren von in ein-transistor-speicherelementen gespeicherten informationen
JPS5683891A (en) * 1979-12-13 1981-07-08 Fujitsu Ltd Semiconductor storage device
US4287576A (en) * 1980-03-26 1981-09-01 International Business Machines Corporation Sense amplifying system for memories with small cells
US4301519A (en) * 1980-05-02 1981-11-17 International Business Machines Corporation Sensing technique for memories with small cells
JPS57111061A (en) * 1980-12-26 1982-07-10 Fujitsu Ltd Semiconductor memory unit
JPS57208691A (en) * 1981-06-15 1982-12-21 Mitsubishi Electric Corp Semiconductor memory
US4445201A (en) * 1981-11-30 1984-04-24 International Business Machines Corporation Simple amplifying system for a dense memory array
US4636988A (en) * 1985-01-07 1987-01-13 Thomson Components-Mostek Corporation CMOS memory arrangement with reduced data line compacitance
US4627031A (en) * 1985-01-07 1986-12-02 Thomson Components-Mostek Corporation CMOS memory arrangement
JPS6245951U (it) * 1985-09-09 1987-03-20
JP2633645B2 (ja) * 1988-09-13 1997-07-23 株式会社東芝 半導体メモリ装置
US5010524A (en) * 1989-04-20 1991-04-23 International Business Machines Corporation Crosstalk-shielded-bit-line dram
US5392241A (en) * 1993-12-10 1995-02-21 International Business Machines Corporation Semiconductor memory circuit with block overwrite

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2204550C3 (de) * 1972-02-01 1975-05-28 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Speicherschaltung
US3760381A (en) * 1972-06-30 1973-09-18 Ibm Stored charge memory detection circuit
US3949381A (en) * 1974-07-23 1976-04-06 International Business Machines Corporation Differential charge transfer sense amplifier
US3992703A (en) * 1974-10-09 1976-11-16 Rockwell International Corporation Memory output circuit
US3979734A (en) * 1975-06-16 1976-09-07 International Business Machines Corporation Multiple element charge storage memory cell
DE2634089C3 (de) * 1975-08-11 1988-09-08 Nippon Telegraph And Telephone Corp., Tokio/Tokyo Schaltungsanordnung zum Erfassen schwacher Signale
US4069475A (en) * 1976-04-15 1978-01-17 National Semiconductor Corporation MOS Dynamic random access memory having an improved sense and restore circuit
US4103342A (en) * 1976-06-17 1978-07-25 International Business Machines Corporation Two-device memory cell with single floating capacitor
US4053873A (en) * 1976-06-30 1977-10-11 International Business Machines Corporation Self-isolating cross-coupled sense amplifier latch circuit

Also Published As

Publication number Publication date
EP0004557A1 (de) 1979-10-17
EP0004557B1 (de) 1981-12-23
IT7921030A0 (it) 1979-03-16
JPS54132136A (en) 1979-10-13
US4160275A (en) 1979-07-03
DE2961587D1 (en) 1982-02-11
JPS5916355B2 (ja) 1984-04-14

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