Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
  • H03K17/941—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated using an optical detector
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/70—Bipolar devices
  • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
  • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
  • H01L29/7391—Gated diode structures
  • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
  • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
  • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Physics & Mathematics (AREA)
• Ceramic Engineering (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Thyristors (AREA)
• Electronic Switches (AREA)

Applications Claiming Priority (2)

Publications (2)

Family

ID=26939179

Family Applications (1)

Country Status (7)

Families Citing this family (1)

Family Cites Families (7)

• 1982
  • 1982-03-25 JP JP57501404A patent/JPS58500427A/ja active Pending
  • 1982-03-25 IT IT20400/82A patent/IT1151525B/it active
  • 1982-03-25 EP EP82901270A patent/EP0075589B1/en not_active Expired
  • 1982-03-25 GB GB08233292A patent/GB2113005B/en not_active Expired
  • 1982-03-25 NL NL8220133A patent/NL8220133A/nl unknown
  • 1982-03-25 WO PCT/US1982/000364 patent/WO1982003497A1/en active IP Right Grant
  • 1982-03-26 CA CA000399478A patent/CA1166359A/en not_active Expired

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