IT1137610B - METHOD FOR APPLYING A COATING TO A SOLAR CELL - Google Patents

METHOD FOR APPLYING A COATING TO A SOLAR CELL

Info

Publication number
IT1137610B
IT1137610B IT22882/81A IT2288281A IT1137610B IT 1137610 B IT1137610 B IT 1137610B IT 22882/81 A IT22882/81 A IT 22882/81A IT 2288281 A IT2288281 A IT 2288281A IT 1137610 B IT1137610 B IT 1137610B
Authority
IT
Italy
Prior art keywords
coating
applying
solar cell
solar
cell
Prior art date
Application number
IT22882/81A
Other languages
Italian (it)
Other versions
IT8122882A0 (en
Inventor
Michael Schneider
Original Assignee
Exxon Research Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exxon Research Engineering Co filed Critical Exxon Research Engineering Co
Publication of IT8122882A0 publication Critical patent/IT8122882A0/en
Priority to NL8105473A priority Critical patent/NL8105473A/en
Application granted granted Critical
Publication of IT1137610B publication Critical patent/IT1137610B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
IT22882/81A 1980-07-11 1981-07-10 METHOD FOR APPLYING A COATING TO A SOLAR CELL IT1137610B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
NL8105473A NL8105473A (en) 1981-07-10 1981-12-04 Soil cultivator or plough - has members carrying cultivator tines and adjustable elements behind to produce drainage channels at deeper level

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16741780A 1980-07-11 1980-07-11

Publications (2)

Publication Number Publication Date
IT8122882A0 IT8122882A0 (en) 1981-07-10
IT1137610B true IT1137610B (en) 1986-09-10

Family

ID=22607301

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22882/81A IT1137610B (en) 1980-07-11 1981-07-10 METHOD FOR APPLYING A COATING TO A SOLAR CELL

Country Status (9)

Country Link
JP (1) JPS5749279A (en)
AU (1) AU542589B2 (en)
BE (1) BE889579A (en)
CA (1) CA1164734A (en)
DE (1) DE3127156A1 (en)
ES (1) ES8301556A1 (en)
FR (1) FR2486718B1 (en)
GB (1) GB2079537B (en)
IT (1) IT1137610B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3242791A1 (en) * 1982-11-19 1984-05-24 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING ELECTRICAL CONTACTS FORMING FINGER ELECTRODE STRUCTURES ON AMORPHOUS SILICON SOLAR CELLS
SE8306663L (en) * 1982-12-08 1984-06-09 Int Rectifier Corp PROCEDURE FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
US4594311A (en) * 1984-10-29 1986-06-10 Kollmorgen Technologies Corporation Process for the photoselective metallization on non-conductive plastic base materials
US4692349A (en) * 1986-03-03 1987-09-08 American Telephone And Telegraph Company, At&T Bell Laboratories Selective electroless plating of vias in VLSI devices
KR960001468B1 (en) * 1987-07-07 1996-01-30 에이에스이 아메리카스 인코포레이티드 Method of fabricating solar cells with anti-reflection coating
JPH02137482A (en) * 1988-11-18 1990-05-25 Canon Inc Camera system
US5428249A (en) 1992-07-15 1995-06-27 Canon Kabushiki Kaisha Photovoltaic device with improved collector electrode

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5120277B2 (en) * 1972-08-17 1976-06-23
US4171989A (en) * 1976-01-27 1979-10-23 Motorola, Inc. Contact for solar cells
US4241108A (en) * 1978-10-10 1980-12-23 Rca Corporation Sprayable titanium composition

Also Published As

Publication number Publication date
CA1164734A (en) 1984-04-03
DE3127156A1 (en) 1982-03-04
FR2486718A1 (en) 1982-01-15
GB2079537B (en) 1984-07-11
GB2079537A (en) 1982-01-20
IT8122882A0 (en) 1981-07-10
ES503827A0 (en) 1982-12-01
AU7275481A (en) 1982-01-14
BE889579A (en) 1982-01-11
FR2486718B1 (en) 1986-09-12
ES8301556A1 (en) 1982-12-01
JPS5749279A (en) 1982-03-23
AU542589B2 (en) 1985-02-28

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