IT1135748B - SHORT-CHANNEL FIELD-EFFECT TRANSISTOR - Google Patents
SHORT-CHANNEL FIELD-EFFECT TRANSISTORInfo
- Publication number
- IT1135748B IT1135748B IT21239/81A IT2123981A IT1135748B IT 1135748 B IT1135748 B IT 1135748B IT 21239/81 A IT21239/81 A IT 21239/81A IT 2123981 A IT2123981 A IT 2123981A IT 1135748 B IT1135748 B IT 1135748B
- Authority
- IT
- Italy
- Prior art keywords
- short
- effect transistor
- channel field
- channel
- field
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
- H01L29/41783—Raised source or drain electrodes self aligned with the gate
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14112180A | 1980-04-17 | 1980-04-17 | |
US06/141,120 US4343082A (en) | 1980-04-17 | 1980-04-17 | Method of making contact electrodes to silicon gate, and source and drain regions, of a semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8121239A0 IT8121239A0 (en) | 1981-04-16 |
IT1135748B true IT1135748B (en) | 1986-08-27 |
Family
ID=26838805
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT21239/81A IT1135748B (en) | 1980-04-17 | 1981-04-16 | SHORT-CHANNEL FIELD-EFFECT TRANSISTOR |
Country Status (5)
Country | Link |
---|---|
DE (1) | DE3115596A1 (en) |
FR (1) | FR2481005A1 (en) |
GB (1) | GB2074374B (en) |
IT (1) | IT1135748B (en) |
NL (1) | NL8101902A (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1197926A (en) * | 1981-12-16 | 1985-12-10 | William D. Ryden | Zero drain overlap and self-aligned contacts and contact methods for mod devices |
DE3211761A1 (en) * | 1982-03-30 | 1983-10-06 | Siemens Ag | METHOD FOR MANUFACTURING INTEGRATED MOS FIELD EFFECT TRANSISTOR CIRCUITS IN SILICON GATE TECHNOLOGY WITH SILICIDE-COVERED DIFFUSION AREAS AS LOW-RESISTANT CONDUCTORS |
FR2525029A1 (en) * | 1982-04-08 | 1983-10-14 | Commissariat Energie Atomique | Insulation for conducting line in integrated circuit - with subsequent fabrication of MOS transistor |
US4485550A (en) * | 1982-07-23 | 1984-12-04 | At&T Bell Laboratories | Fabrication of schottky-barrier MOS FETs |
JPS59106172A (en) * | 1982-12-07 | 1984-06-19 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | Method of producing field effect transistor |
JPS59210642A (en) * | 1983-05-16 | 1984-11-29 | Hitachi Ltd | Manufacture of semiconductor device |
US4453306A (en) * | 1983-05-27 | 1984-06-12 | At&T Bell Laboratories | Fabrication of FETs |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4141022A (en) * | 1977-09-12 | 1979-02-20 | Signetics Corporation | Refractory metal contacts for IGFETS |
-
1981
- 1981-04-13 FR FR8107374A patent/FR2481005A1/en active Granted
- 1981-04-16 NL NL8101902A patent/NL8101902A/en not_active Application Discontinuation
- 1981-04-16 GB GB8112047A patent/GB2074374B/en not_active Expired
- 1981-04-16 IT IT21239/81A patent/IT1135748B/en active
- 1981-04-16 DE DE19813115596 patent/DE3115596A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
GB2074374A (en) | 1981-10-28 |
IT8121239A0 (en) | 1981-04-16 |
FR2481005B1 (en) | 1983-10-21 |
FR2481005A1 (en) | 1981-10-23 |
GB2074374B (en) | 1984-04-26 |
DE3115596C2 (en) | 1988-04-14 |
NL8101902A (en) | 1981-11-16 |
DE3115596A1 (en) | 1982-04-01 |
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