IT1114163B - Dispositivo fet a porta trapezoidale - Google Patents
Dispositivo fet a porta trapezoidaleInfo
- Publication number
- IT1114163B IT1114163B IT27707/77A IT2770777A IT1114163B IT 1114163 B IT1114163 B IT 1114163B IT 27707/77 A IT27707/77 A IT 27707/77A IT 2770777 A IT2770777 A IT 2770777A IT 1114163 B IT1114163 B IT 1114163B
- Authority
- IT
- Italy
- Prior art keywords
- fet device
- trapezoidal door
- door fet
- trapezoidal
- fet
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Logic Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US76080677A | 1977-01-19 | 1977-01-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1114163B true IT1114163B (it) | 1986-01-27 |
Family
ID=25060249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT27707/77A IT1114163B (it) | 1977-01-19 | 1977-09-20 | Dispositivo fet a porta trapezoidale |
Country Status (5)
Country | Link |
---|---|
US (1) | UST979006I4 (de) |
JP (1) | JPS5390880A (de) |
DE (1) | DE2801293A1 (de) |
FR (1) | FR2378356A1 (de) |
IT (1) | IT1114163B (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4546453A (en) * | 1982-06-22 | 1985-10-08 | Motorola, Inc. | Four-state ROM cell with increased differential between states |
-
1977
- 1977-08-31 JP JP10373477A patent/JPS5390880A/ja active Pending
- 1977-09-20 IT IT27707/77A patent/IT1114163B/it active
- 1977-12-09 FR FR7737953A patent/FR2378356A1/fr active Granted
-
1978
- 1978-01-13 DE DE19782801293 patent/DE2801293A1/de not_active Withdrawn
- 1978-06-28 US US05/920,026 patent/UST979006I4/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS5390880A (en) | 1978-08-10 |
DE2801293A1 (de) | 1978-07-20 |
FR2378356A1 (fr) | 1978-08-18 |
UST979006I4 (en) | 1979-02-06 |
FR2378356B1 (de) | 1980-12-19 |
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