IT1052390B - Perfezionamento nei procedimenti di fabbricazione di dispositivi a semiconduttori in particolare di incisione per erosione ionica - Google Patents
Perfezionamento nei procedimenti di fabbricazione di dispositivi a semiconduttori in particolare di incisione per erosione ionicaInfo
- Publication number
- IT1052390B IT1052390B IT7552375A IT5237575A IT1052390B IT 1052390 B IT1052390 B IT 1052390B IT 7552375 A IT7552375 A IT 7552375A IT 5237575 A IT5237575 A IT 5237575A IT 1052390 B IT1052390 B IT 1052390B
- Authority
- IT
- Italy
- Prior art keywords
- improvement
- semiconductor devices
- manufacturing procedures
- ionic erosion
- particular engraving
- Prior art date
Links
- 230000003628 erosive effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT7552375A IT1052390B (it) | 1975-11-24 | 1975-11-24 | Perfezionamento nei procedimenti di fabbricazione di dispositivi a semiconduttori in particolare di incisione per erosione ionica |
GB41108/76A GB1553982A (en) | 1975-11-24 | 1976-10-04 | Manufacturing processes of semiconductor structures |
NL7611022A NL7611022A (nl) | 1975-11-24 | 1976-10-06 | Werkwijze voor de vervaardiging van halfgelei- derinrichtingen, alsmede halfgeleiderinrich- tingen verkregen volgens deze werkwijze. |
US05/730,542 US4082637A (en) | 1975-11-24 | 1976-10-07 | Process for manufacturing semiconductor structures by sputter etching |
FR7633904A FR2332616A1 (fr) | 1975-11-24 | 1976-11-10 | Procede de fabrication de dispositifs semi-conducteurs, notamment par la technique de la crepitation |
DE19762653029 DE2653029A1 (de) | 1975-11-24 | 1976-11-22 | Verfahren zur herstellung von halbleiter-bauelementen, insbesondere einkristall-bauelementen, durch ionenerosion |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT7552375A IT1052390B (it) | 1975-11-24 | 1975-11-24 | Perfezionamento nei procedimenti di fabbricazione di dispositivi a semiconduttori in particolare di incisione per erosione ionica |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1052390B true IT1052390B (it) | 1981-06-20 |
Family
ID=11276862
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT7552375A IT1052390B (it) | 1975-11-24 | 1975-11-24 | Perfezionamento nei procedimenti di fabbricazione di dispositivi a semiconduttori in particolare di incisione per erosione ionica |
Country Status (6)
Country | Link |
---|---|
US (1) | US4082637A (it) |
DE (1) | DE2653029A1 (it) |
FR (1) | FR2332616A1 (it) |
GB (1) | GB1553982A (it) |
IT (1) | IT1052390B (it) |
NL (1) | NL7611022A (it) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4135998A (en) * | 1978-04-26 | 1979-01-23 | International Business Machines Corp. | Method for forming pt-si schottky barrier contact |
JPS5779169A (en) * | 1980-11-06 | 1982-05-18 | Sumitomo Electric Ind Ltd | Physical vapor deposition method |
US4414069A (en) * | 1982-06-30 | 1983-11-08 | International Business Machines Corporation | Negative ion beam selective etching process |
FR2555362B1 (fr) * | 1983-11-17 | 1990-04-20 | France Etat | Procede et dispositif de traitement d'un materiau semi-conducteur, par plasma |
JP2004220968A (ja) * | 2003-01-16 | 2004-08-05 | Pioneer Electronic Corp | ディスプレイパネルおよびその製造方法 |
TW200942633A (en) * | 2008-04-14 | 2009-10-16 | Yu-Hsueh Lin | Method for plating film on surface of drill and structure of film-plated drill |
US9349395B2 (en) | 2012-08-31 | 2016-05-24 | International Business Machines Corporation | System and method for differential etching |
US9001463B2 (en) | 2012-08-31 | 2015-04-07 | International Business Machines Corporaton | Magnetic recording head having protected reader sensors and near zero recessed write poles |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2024898A1 (de) * | 1970-05-22 | 1971-12-09 | Licentia Gmbh | Verfahren zum Verbessern der Kenn werte einer Halbleiteranordnung |
US3868271A (en) * | 1973-06-13 | 1975-02-25 | Ibm | Method of cleaning a glass substrate by ionic bombardment in a wet active gas |
-
1975
- 1975-11-24 IT IT7552375A patent/IT1052390B/it active
-
1976
- 1976-10-04 GB GB41108/76A patent/GB1553982A/en not_active Expired
- 1976-10-06 NL NL7611022A patent/NL7611022A/xx not_active Application Discontinuation
- 1976-10-07 US US05/730,542 patent/US4082637A/en not_active Expired - Lifetime
- 1976-11-10 FR FR7633904A patent/FR2332616A1/fr active Granted
- 1976-11-22 DE DE19762653029 patent/DE2653029A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB1553982A (en) | 1979-10-17 |
FR2332616B3 (it) | 1979-07-27 |
DE2653029A1 (de) | 1977-05-26 |
US4082637A (en) | 1978-04-04 |
FR2332616A1 (fr) | 1977-06-17 |
NL7611022A (nl) | 1977-05-26 |
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