IT1052390B - Perfezionamento nei procedimenti di fabbricazione di dispositivi a semiconduttori in particolare di incisione per erosione ionica - Google Patents

Perfezionamento nei procedimenti di fabbricazione di dispositivi a semiconduttori in particolare di incisione per erosione ionica

Info

Publication number
IT1052390B
IT1052390B IT7552375A IT5237575A IT1052390B IT 1052390 B IT1052390 B IT 1052390B IT 7552375 A IT7552375 A IT 7552375A IT 5237575 A IT5237575 A IT 5237575A IT 1052390 B IT1052390 B IT 1052390B
Authority
IT
Italy
Prior art keywords
improvement
semiconductor devices
manufacturing procedures
ionic erosion
particular engraving
Prior art date
Application number
IT7552375A
Other languages
English (en)
Inventor
E Simonnetti
Carlo Misiano
Karl H Diedrich
Original Assignee
Selenia Ind Elettroniche
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Selenia Ind Elettroniche filed Critical Selenia Ind Elettroniche
Priority to IT7552375A priority Critical patent/IT1052390B/it
Priority to GB41108/76A priority patent/GB1553982A/en
Priority to NL7611022A priority patent/NL7611022A/xx
Priority to US05/730,542 priority patent/US4082637A/en
Priority to FR7633904A priority patent/FR2332616A1/fr
Priority to DE19762653029 priority patent/DE2653029A1/de
Application granted granted Critical
Publication of IT1052390B publication Critical patent/IT1052390B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT7552375A 1975-11-24 1975-11-24 Perfezionamento nei procedimenti di fabbricazione di dispositivi a semiconduttori in particolare di incisione per erosione ionica IT1052390B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT7552375A IT1052390B (it) 1975-11-24 1975-11-24 Perfezionamento nei procedimenti di fabbricazione di dispositivi a semiconduttori in particolare di incisione per erosione ionica
GB41108/76A GB1553982A (en) 1975-11-24 1976-10-04 Manufacturing processes of semiconductor structures
NL7611022A NL7611022A (nl) 1975-11-24 1976-10-06 Werkwijze voor de vervaardiging van halfgelei- derinrichtingen, alsmede halfgeleiderinrich- tingen verkregen volgens deze werkwijze.
US05/730,542 US4082637A (en) 1975-11-24 1976-10-07 Process for manufacturing semiconductor structures by sputter etching
FR7633904A FR2332616A1 (fr) 1975-11-24 1976-11-10 Procede de fabrication de dispositifs semi-conducteurs, notamment par la technique de la crepitation
DE19762653029 DE2653029A1 (de) 1975-11-24 1976-11-22 Verfahren zur herstellung von halbleiter-bauelementen, insbesondere einkristall-bauelementen, durch ionenerosion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT7552375A IT1052390B (it) 1975-11-24 1975-11-24 Perfezionamento nei procedimenti di fabbricazione di dispositivi a semiconduttori in particolare di incisione per erosione ionica

Publications (1)

Publication Number Publication Date
IT1052390B true IT1052390B (it) 1981-06-20

Family

ID=11276862

Family Applications (1)

Application Number Title Priority Date Filing Date
IT7552375A IT1052390B (it) 1975-11-24 1975-11-24 Perfezionamento nei procedimenti di fabbricazione di dispositivi a semiconduttori in particolare di incisione per erosione ionica

Country Status (6)

Country Link
US (1) US4082637A (it)
DE (1) DE2653029A1 (it)
FR (1) FR2332616A1 (it)
GB (1) GB1553982A (it)
IT (1) IT1052390B (it)
NL (1) NL7611022A (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4135998A (en) * 1978-04-26 1979-01-23 International Business Machines Corp. Method for forming pt-si schottky barrier contact
JPS5779169A (en) * 1980-11-06 1982-05-18 Sumitomo Electric Ind Ltd Physical vapor deposition method
US4414069A (en) * 1982-06-30 1983-11-08 International Business Machines Corporation Negative ion beam selective etching process
FR2555362B1 (fr) * 1983-11-17 1990-04-20 France Etat Procede et dispositif de traitement d'un materiau semi-conducteur, par plasma
JP2004220968A (ja) * 2003-01-16 2004-08-05 Pioneer Electronic Corp ディスプレイパネルおよびその製造方法
TW200942633A (en) * 2008-04-14 2009-10-16 Yu-Hsueh Lin Method for plating film on surface of drill and structure of film-plated drill
US9001463B2 (en) 2012-08-31 2015-04-07 International Business Machines Corporaton Magnetic recording head having protected reader sensors and near zero recessed write poles
US9349395B2 (en) 2012-08-31 2016-05-24 International Business Machines Corporation System and method for differential etching

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2024898A1 (de) * 1970-05-22 1971-12-09 Licentia Gmbh Verfahren zum Verbessern der Kenn werte einer Halbleiteranordnung
US3868271A (en) * 1973-06-13 1975-02-25 Ibm Method of cleaning a glass substrate by ionic bombardment in a wet active gas

Also Published As

Publication number Publication date
US4082637A (en) 1978-04-04
FR2332616B3 (it) 1979-07-27
NL7611022A (nl) 1977-05-26
GB1553982A (en) 1979-10-17
DE2653029A1 (de) 1977-05-26
FR2332616A1 (fr) 1977-06-17

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