Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
  • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
  • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
  • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
  • H01L29/42312—Gate electrodes for field effect devices
  • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
  • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
  • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/762—Charge transfer devices
  • H01L29/765—Charge-coupled devices
  • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
  • H01L29/76866—Surface Channel CCD

Applications Claiming Priority (1)

Publications (1)

Family

ID=22438445

Family Applications (1)

Country Status (8)

Families Citing this family (1)

Family Cites Families (2)

• 1972
  • 1972-01-28 IT IT1988872A patent/IT1044825B/en active
  • 1972-02-08 FR FR7204903A patent/FR2131959B1/fr not_active Expired
  • 1972-02-17 BE BE779499A patent/BE779499A/en unknown
  • 1972-02-21 GB GB789672A patent/GB1375063A/en not_active Expired
  • 1972-02-28 AU AU39441/72A patent/AU3944172A/en not_active Expired
  • 1972-03-13 CH CH367272A patent/CH539917A/en not_active IP Right Cessation
  • 1972-03-21 DE DE19722213656 patent/DE2213656A1/en active Pending
  • 1972-03-23 NL NL7203859A patent/NL7203859A/xx unknown

Also Published As

Similar Documents