IT1042654B - Transistore a effetio di comap com cate flottante isolato - Google Patents

Transistore a effetio di comap com cate flottante isolato

Info

Publication number
IT1042654B
IT1042654B IT27369/75A IT2736975A IT1042654B IT 1042654 B IT1042654 B IT 1042654B IT 27369/75 A IT27369/75 A IT 27369/75A IT 2736975 A IT2736975 A IT 2736975A IT 1042654 B IT1042654 B IT 1042654B
Authority
IT
Italy
Prior art keywords
comap
cate
com
floating transistor
transistor isolated
Prior art date
Application number
IT27369/75A
Other languages
English (en)
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2445079A external-priority patent/DE2445079C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1042654B publication Critical patent/IT1042654B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
IT27369/75A 1974-09-20 1975-09-18 Transistore a effetio di comap com cate flottante isolato IT1042654B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2445079A DE2445079C3 (de) 1974-09-20 1974-09-20 Speicher-Feldeffekttransistor

Publications (1)

Publication Number Publication Date
IT1042654B true IT1042654B (it) 1980-01-30

Family

ID=5926358

Family Applications (1)

Application Number Title Priority Date Filing Date
IT27369/75A IT1042654B (it) 1974-09-20 1975-09-18 Transistore a effetio di comap com cate flottante isolato

Country Status (10)

Country Link
JP (1) JPS5528554B2 (Direct)
AT (1) AT376845B (Direct)
BE (1) BE833632A (Direct)
CH (1) CH591763A5 (Direct)
DK (1) DK141545C (Direct)
FR (1) FR2285719A1 (Direct)
GB (1) GB1483555A (Direct)
IT (1) IT1042654B (Direct)
NL (1) NL163373C (Direct)
SE (1) SE402186B (Direct)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857750A (ja) * 1981-10-01 1983-04-06 Seiko Instr & Electronics Ltd 不揮発性半導体メモリ
JPS5887877A (ja) * 1981-11-19 1983-05-25 Sanyo Electric Co Ltd 半導体不揮発性メモリ
JPH06252392A (ja) * 1993-03-01 1994-09-09 Nec Corp 電界効果トランジスタ
KR0149571B1 (ko) * 1995-05-04 1998-10-01 김주용 반도체 소자의 트랜지스터 구조
JP2016006894A (ja) * 2015-08-03 2016-01-14 スパンション エルエルシー 半導体装置およびその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6407158A (Direct) * 1963-06-24 1964-12-28
US3745426A (en) * 1970-06-01 1973-07-10 Rca Corp Insulated gate field-effect transistor with variable gain
US3660819A (en) * 1970-06-15 1972-05-02 Intel Corp Floating gate transistor and method for charging and discharging same
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
NL7212151A (Direct) * 1972-09-07 1974-03-11

Also Published As

Publication number Publication date
DK423275A (da) 1976-03-21
GB1483555A (en) 1977-08-24
SE7510483L (sv) 1976-03-22
DK141545B (da) 1980-04-14
DK141545C (da) 1980-09-29
NL7510942A (nl) 1976-03-23
SE402186B (sv) 1978-06-19
NL163373C (nl) 1980-08-15
AT376845B (de) 1985-01-10
JPS5528554B2 (Direct) 1980-07-29
ATA629275A (de) 1984-05-15
CH591763A5 (Direct) 1977-09-30
FR2285719B1 (Direct) 1979-03-23
BE833632A (fr) 1976-03-19
JPS5157291A (Direct) 1976-05-19
FR2285719A1 (fr) 1976-04-16

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