IT1042373B - Processo per l impiantamento di ioni attraverso una maschera di materiale fotoresistivo - Google Patents

Processo per l impiantamento di ioni attraverso una maschera di materiale fotoresistivo

Info

Publication number
IT1042373B
IT1042373B IT27026/75A IT2702675A IT1042373B IT 1042373 B IT1042373 B IT 1042373B IT 27026/75 A IT27026/75 A IT 27026/75A IT 2702675 A IT2702675 A IT 2702675A IT 1042373 B IT1042373 B IT 1042373B
Authority
IT
Italy
Prior art keywords
ions
mask
implementation
photoresistive material
photoresistive
Prior art date
Application number
IT27026/75A
Other languages
English (en)
Italian (it)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1042373B publication Critical patent/IT1042373B/it

Links

Classifications

    • H10P95/00—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H10W74/01—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/131—Reactive ion etching rie

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
IT27026/75A 1974-11-25 1975-09-09 Processo per l impiantamento di ioni attraverso una maschera di materiale fotoresistivo IT1042373B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US527115A US3920483A (en) 1974-11-25 1974-11-25 Method of ion implantation through a photoresist mask

Publications (1)

Publication Number Publication Date
IT1042373B true IT1042373B (it) 1980-01-30

Family

ID=24100152

Family Applications (1)

Application Number Title Priority Date Filing Date
IT27026/75A IT1042373B (it) 1974-11-25 1975-09-09 Processo per l impiantamento di ioni attraverso una maschera di materiale fotoresistivo

Country Status (7)

Country Link
US (1) US3920483A (esLanguage)
JP (1) JPS5165874A (esLanguage)
CA (1) CA1043667A (esLanguage)
DE (1) DE2534801C2 (esLanguage)
FR (1) FR2292332A1 (esLanguage)
GB (1) GB1470285A (esLanguage)
IT (1) IT1042373B (esLanguage)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4018627A (en) * 1975-09-22 1977-04-19 Signetics Corporation Method for fabricating semiconductor devices utilizing oxide protective layer
DE2726813C2 (de) * 1976-06-17 1984-02-23 Motorola, Inc., 60196 Schaumburg, Ill. Verfahren zur Herstellung eines mit einem Muster versehenen Substrats
US5024918A (en) * 1976-12-23 1991-06-18 Texas Instruments Incorporated Heat activated dry development of photoresist by means of active oxygen atmosphere
US4111720A (en) * 1977-03-31 1978-09-05 International Business Machines Corporation Method for forming a non-epitaxial bipolar integrated circuit
US4125650A (en) * 1977-08-08 1978-11-14 International Business Machines Corporation Resist image hardening process
US4196228A (en) * 1978-06-10 1980-04-01 Monolithic Memories, Inc. Fabrication of high resistivity semiconductor resistors by ion implanatation
US4253888A (en) * 1978-06-16 1981-03-03 Matsushita Electric Industrial Co., Ltd. Pretreatment of photoresist masking layers resulting in higher temperature device processing
US4187331A (en) * 1978-08-24 1980-02-05 International Business Machines Corp. Fluorine plasma resist image hardening
US4241165A (en) * 1978-09-05 1980-12-23 Motorola, Inc. Plasma development process for photoresist
US4232057A (en) * 1979-03-01 1980-11-04 International Business Machines Corporation Semiconductor plasma oxidation
US4376664A (en) * 1979-05-31 1983-03-15 Fujitsu Limited Method of producing a semiconductor device
JPS588139B2 (ja) * 1979-05-31 1983-02-14 富士通株式会社 半導体装置の製造方法
FR2460037A1 (fr) * 1979-06-22 1981-01-16 Thomson Csf Procede d'auto-alignement de regions differemment dopees d'une structure de semi-conducteur
US4239787A (en) * 1979-06-25 1980-12-16 Bell Telephone Laboratories, Incorporated Semitransparent and durable photolithography masks
US4231811A (en) * 1979-09-13 1980-11-04 Intel Corporation Variable thickness self-aligned photoresist process
DE2945854A1 (de) * 1979-11-13 1981-05-21 Deutsche Itt Industries Gmbh, 7800 Freiburg Ionenimplantationsverfahren
US4259369A (en) * 1979-12-13 1981-03-31 International Business Machines Corporation Image hardening process
US4274909A (en) * 1980-03-17 1981-06-23 International Business Machines Corporation Method for forming ultra fine deep dielectric isolation
US4542037A (en) * 1980-04-28 1985-09-17 Fairchild Camera And Instrument Corporation Laser induced flow of glass bonded materials
CA1174285A (en) * 1980-04-28 1984-09-11 Michelangelo Delfino Laser induced flow of integrated circuit structure materials
US4390567A (en) * 1981-03-11 1983-06-28 The United States Of America As Represented By The United States Department Of Energy Method of forming graded polymeric coatings or films
DE3115029A1 (de) * 1981-04-14 1982-11-04 Deutsche Itt Industries Gmbh, 7800 Freiburg "verfahren zur herstellung eines integrierten bipolaren planartransistors"
JPS6034085B2 (ja) 1981-04-20 1985-08-07 松下電器産業株式会社 カラ−フイルタの製造方法
US4432132A (en) * 1981-12-07 1984-02-21 Bell Telephone Laboratories, Incorporated Formation of sidewall oxide layers by reactive oxygen ion etching to define submicron features
GB2117175A (en) * 1982-03-17 1983-10-05 Philips Electronic Associated Semiconductor device and method of manufacture
US4544416A (en) * 1983-08-26 1985-10-01 Texas Instruments Incorporated Passivation of silicon oxide during photoresist burnoff
US4552831A (en) * 1984-02-06 1985-11-12 International Business Machines Corporation Fabrication method for controlled via hole process
JPS62271435A (ja) * 1986-05-20 1987-11-25 Fujitsu Ltd レジストの剥離方法
US4772539A (en) * 1987-03-23 1988-09-20 International Business Machines Corporation High resolution E-beam lithographic technique
US5292671A (en) * 1987-10-08 1994-03-08 Matsushita Electric Industrial, Co., Ltd. Method of manufacture for semiconductor device by forming deep and shallow regions
JPH0712939B2 (ja) * 1988-09-28 1995-02-15 ホーヤ株式会社 ガラス成形体の製造方法
JPH06204162A (ja) * 1992-12-28 1994-07-22 Mitsubishi Electric Corp 半導体装置の製造方法および該方法に用いられるレジスト組成物
US5674357A (en) * 1995-08-30 1997-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor substrate cleaning process
US5783366A (en) * 1995-12-07 1998-07-21 Taiwan Semiconductor Manufacturing Company Ltd. Method for eliminating charging of photoresist on specimens during scanning electron microscope examination
US5962195A (en) * 1997-09-10 1999-10-05 Vanguard International Semiconductor Corporation Method for controlling linewidth by etching bottom anti-reflective coating
US10408467B2 (en) * 2014-03-12 2019-09-10 Bsh Home Appliances Corporation Home cooking appliance having flue boundary
CN104979171B (zh) * 2015-05-20 2018-01-16 中国航天科技集团公司第九研究院第七七一研究所 一种能够防止离子注入区边界硅棱剥落的离子注入方法
KR102911015B1 (ko) * 2021-06-09 2026-01-13 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3113896A (en) * 1961-01-31 1963-12-10 Space Technology Lab Inc Electron beam masking for etching electrical circuits
US3410776A (en) * 1966-02-01 1968-11-12 Lab For Electronics Inc Gas reaction apparatus
US3570112A (en) * 1967-12-01 1971-03-16 Nat Defence Canada Radiation hardening of insulated gate field effect transistors
US3653977A (en) * 1968-04-10 1972-04-04 Ion Physics Corp Method of preventing ion channeling in crystalline materials
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process
US3575745A (en) * 1969-04-02 1971-04-20 Bryan H Hill Integrated circuit fabrication
US3860783A (en) * 1970-10-19 1975-01-14 Bell Telephone Labor Inc Ion etching through a pattern mask
US3663265A (en) * 1970-11-16 1972-05-16 North American Rockwell Deposition of polymeric coatings utilizing electrical excitation
JPS557008B2 (esLanguage) * 1972-02-29 1980-02-21
US3756861A (en) * 1972-03-13 1973-09-04 Bell Telephone Labor Inc Bipolar transistors and method of manufacture
US3793088A (en) * 1972-11-15 1974-02-19 Bell Telephone Labor Inc Compatible pnp and npn devices in an integrated circuit

Also Published As

Publication number Publication date
GB1470285A (en) 1977-04-14
FR2292332B1 (esLanguage) 1977-12-16
US3920483A (en) 1975-11-18
DE2534801C2 (de) 1982-09-02
CA1043667A (en) 1978-12-05
DE2534801A1 (de) 1976-05-26
FR2292332A1 (fr) 1976-06-18
JPS5165874A (en) 1976-06-07
JPS5238386B2 (esLanguage) 1977-09-28

Similar Documents

Publication Publication Date Title
IT1042373B (it) Processo per l impiantamento di ioni attraverso una maschera di materiale fotoresistivo
BR7505130A (pt) Fio aperfeicoado e processo para a producao do mesmo
BR7502362A (pt) Processo para a fabricacao de um vaso de pressao e vaso de pressao
BR7500308A (pt) Processo para producao de um composto de piridiniloxi (tio)-fenilureia
BR7505943A (pt) Processo para fragmentacao de um material para sabor
IT1111664B (it) Procedimento di formatura di un materiale ceramico
IT1042770B (it) Generatore di ioni a dippia camera
BR7506830A (pt) Processo para a producao de material tensoativo
BR7503406A (pt) Processo para a preparacao de derivados ionicos poliiodados do benzeno
BR7503729A (pt) Processo para a producao de isocianatos
BR7502989A (pt) Processo de fabricacao de material refratario
BR7508170A (pt) Processo para a producao de carbonil-aldimino-metano-fosfanatos
IT1035999B (it) Metodo per formare una carcassa di pneumatico
BR7504615A (pt) Um processo para preparar poliolefinas
BR7507615A (pt) Processo para a producao de objetos alongados de quartzo fundido
BR7508472A (pt) Processo de fabricacao de material particular e para a producao de um corpo contendo este material
BR7505624A (pt) Processo para a producao de finilmetilcarbinol
BR7408285A (pt) Elemento de concreto e processo para a fabricacao do mesm
BR7502426A (pt) Processo para a manufatura de tubeiras de dissociacao
BR7506050A (pt) Processo para a purificacao de solucoes aquosas de ions metalicos
BR7504571A (pt) Processo aperfeicoado para a fabricacao de um fecho eclai
BR7507248A (pt) Processo para a preparacao de dicclorosilanas
IT1031805B (it) Processo per la formazione di una pellicola di passivazione di ossido di cromo
BR7508389A (pt) Processo para fabricacao de um agente herbicida
IT1042588B (it) Conenitore per una soluzione contenente ioni di eiero poliacidi