IT1038100B - PERFECTED MEMORY SPECIAL FOR DATA PROCESSING SYSTEMS - Google Patents
PERFECTED MEMORY SPECIAL FOR DATA PROCESSING SYSTEMSInfo
- Publication number
- IT1038100B IT1038100B IT23304/75A IT2330475A IT1038100B IT 1038100 B IT1038100 B IT 1038100B IT 23304/75 A IT23304/75 A IT 23304/75A IT 2330475 A IT2330475 A IT 2330475A IT 1038100 B IT1038100 B IT 1038100B
- Authority
- IT
- Italy
- Prior art keywords
- perfected
- data processing
- processing systems
- memory special
- special
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2431079A DE2431079C3 (en) | 1974-06-28 | 1974-06-28 | Dynamic semiconductor memory with two-transistor memory elements |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1038100B true IT1038100B (en) | 1979-11-20 |
Family
ID=5919184
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT23304/75A IT1038100B (en) | 1974-06-28 | 1975-05-14 | PERFECTED MEMORY SPECIAL FOR DATA PROCESSING SYSTEMS |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5428252B2 (en) |
CH (1) | CH581885A5 (en) |
DE (1) | DE2431079C3 (en) |
FR (1) | FR2276659A1 (en) |
GB (1) | GB1502334A (en) |
IT (1) | IT1038100B (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5853512B2 (en) * | 1976-02-13 | 1983-11-29 | 株式会社東芝 | Method for manufacturing semiconductor memory device |
JPS5922316B2 (en) * | 1976-02-24 | 1984-05-25 | 株式会社東芝 | dynamic memory device |
US4040016A (en) * | 1976-03-31 | 1977-08-02 | International Business Machines Corporation | Twin nodes capacitance memory |
US4103342A (en) * | 1976-06-17 | 1978-07-25 | International Business Machines Corporation | Two-device memory cell with single floating capacitor |
CA1164710A (en) * | 1978-05-09 | 1984-04-03 | Edward J. Reardon, Jr. | Phototropic photosensitive compositions containing fluoran colorformer |
DE2837877A1 (en) * | 1978-08-30 | 1980-03-06 | Siemens Ag | MOS-INTEGRATED SEMICONDUCTOR MEMORY AND METHOD FOR THE PRODUCTION THEREOF |
DE2855118C2 (en) * | 1978-12-20 | 1981-03-26 | IBM Deutschland GmbH, 70569 Stuttgart | Dynamic FET memory |
DE3173745D1 (en) * | 1981-10-30 | 1986-03-20 | Ibm Deutschland | Fet memory |
JP5034133B2 (en) * | 2000-02-29 | 2012-09-26 | 富士通セミコンダクター株式会社 | Semiconductor memory device |
JP4707244B2 (en) | 2000-03-30 | 2011-06-22 | ルネサスエレクトロニクス株式会社 | Semiconductor memory device and semiconductor device |
TWI359422B (en) | 2008-04-15 | 2012-03-01 | Faraday Tech Corp | 2t sram and associated cell structure |
-
1974
- 1974-06-28 DE DE2431079A patent/DE2431079C3/en not_active Expired
-
1975
- 1975-05-14 IT IT23304/75A patent/IT1038100B/en active
- 1975-05-21 JP JP5978375A patent/JPS5428252B2/ja not_active Expired
- 1975-05-21 GB GB21857/75A patent/GB1502334A/en not_active Expired
- 1975-05-22 CH CH657875A patent/CH581885A5/xx not_active IP Right Cessation
- 1975-05-23 FR FR7516563A patent/FR2276659A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2276659B1 (en) | 1980-01-04 |
JPS5428252B2 (en) | 1979-09-14 |
JPS513824A (en) | 1976-01-13 |
GB1502334A (en) | 1978-03-01 |
DE2431079C3 (en) | 1979-12-13 |
DE2431079B2 (en) | 1979-04-26 |
CH581885A5 (en) | 1976-11-15 |
FR2276659A1 (en) | 1976-01-23 |
DE2431079A1 (en) | 1976-02-12 |
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