IT1031627B - PROCEDURE FOR PRODUCING SILICON MONOCRYSTALS WITH UNIFORMLY P OROGED CONDUCTIVITY - Google Patents

PROCEDURE FOR PRODUCING SILICON MONOCRYSTALS WITH UNIFORMLY P OROGED CONDUCTIVITY

Info

Publication number
IT1031627B
IT1031627B IT20138/75A IT2013875A IT1031627B IT 1031627 B IT1031627 B IT 1031627B IT 20138/75 A IT20138/75 A IT 20138/75A IT 2013875 A IT2013875 A IT 2013875A IT 1031627 B IT1031627 B IT 1031627B
Authority
IT
Italy
Prior art keywords
oroged
conductivity
uniformly
procedure
producing silicon
Prior art date
Application number
IT20138/75A
Other languages
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1031627B publication Critical patent/IT1031627B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/261Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20Doping by irradiation with electromagnetic waves or by particle radiation
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00Irradiation devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
IT20138/75A 1974-02-18 1975-02-11 PROCEDURE FOR PRODUCING SILICON MONOCRYSTALS WITH UNIFORMLY P OROGED CONDUCTIVITY IT1031627B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2407697A DE2407697C3 (en) 1974-02-18 1974-02-18 Process for producing a homogeneously Ga-doped silicon single crystal

Publications (1)

Publication Number Publication Date
IT1031627B true IT1031627B (en) 1979-05-10

Family

ID=5907718

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20138/75A IT1031627B (en) 1974-02-18 1975-02-11 PROCEDURE FOR PRODUCING SILICON MONOCRYSTALS WITH UNIFORMLY P OROGED CONDUCTIVITY

Country Status (12)

Country Link
JP (1) JPS5329572B2 (en)
AT (1) AT339379B (en)
BE (1) BE816719A (en)
DE (1) DE2407697C3 (en)
DK (1) DK658274A (en)
FR (1) FR2261055B1 (en)
GB (1) GB1442930A (en)
IT (1) IT1031627B (en)
NL (1) NL7410745A (en)
PL (1) PL91842B1 (en)
SU (1) SU717999A3 (en)
ZA (1) ZA746269B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9799736B1 (en) 2016-07-20 2017-10-24 International Business Machines Corporation High acceptor level doping in silicon germanium

Also Published As

Publication number Publication date
DE2407697A1 (en) 1975-09-18
GB1442930A (en) 1976-07-14
BE816719A (en) 1974-10-16
JPS5329572B2 (en) 1978-08-22
AT339379B (en) 1977-10-10
JPS50120253A (en) 1975-09-20
DK658274A (en) 1975-10-27
FR2261055B1 (en) 1979-01-05
NL7410745A (en) 1975-08-20
ZA746269B (en) 1975-10-29
DE2407697C3 (en) 1978-11-30
DE2407697B2 (en) 1978-04-06
SU717999A3 (en) 1980-02-25
PL91842B1 (en) 1977-03-31
ATA667874A (en) 1977-02-15
FR2261055A1 (en) 1975-09-12

Similar Documents

Publication Publication Date Title
IT1040590B (en) PROCEDURE FOR PRODUCING POLUURETHANE FOAMS
SE413684B (en) PROCEDURE FOR PREPARING CELLULOSAMASSA IN THE REPLACEMENT AREA 65-95%
IT1037478B (en) PROCEDURE FOR MANUFACTURING SEMICONDUCTOR DEVICE
JPS56129373A (en) Method of producing semiconductor device
JPS57136344A (en) Device used for producing semiconductor device
IT1036894B (en) ANTITRASPIRATION SOAP AND PROCEDURE FOR PRODUCING IT
SE425733B (en) PROCEDURE FOR PREPARING CERTAIN STATED TRIGLYUCERIDES WITH ANTI-INFLAMMATORY PROPERTIES
IT1054694B (en) PROCESS FOR THE PREPARATION OF P BENZOKINONDICHETALI
IT1066265B (en) PROCEDURE FOR PRODUCING MONOCRYSTALLINE SILICON AUCTIONS
IT1041181B (en) PROCEDURE FOR THE CONCRETE COOLING
IT1035884B (en) PROCEDURE FOR PREPARING CYCLIC POLYETERS
RO66457A (en) PROCESS FOR THE PREPARATION OF ALCOXYCARBONYLPHENYLSURES USED AS ERBICIDES
IT1016474B (en) PROCEDURE FOR THE FORMATION OF INSULATORS AND INSULATORS SO OBTAINED
IT1035655B (en) IMPROVEMENT IN ELECTRICAL CABLES FOR HIGH VOLTAGES AND RELATED MANUFACTURING PROCESS
SE414949B (en) PROCEDURE FOR MANUFACTURING ELECTROMAGNETIC SILICONE WITH CUB-PA OFFICE Orientation
BR7503881A (en) IMPROVEMENT IN THE PERCHLOROMETH-MERCAPTAN PREPARATION PROCESS
IT1054363B (en) PROCEDURE FOR PRODUCING L CISTEIN AND L CISTINE
RO65456A (en) PROCESS FOR THE PREPARATION OF SUBSTITUTED 6-METHYL-8-METHYLERGOLINE
IT1029437B (en) PERFLUORDA-KILTIOGLICOLI AND PROCEDURE FOR PRODUCING THEM
IT1033359B (en) PROCEDURE FOR PRODUCING ALCYLPHENOLS
GB1525122A (en) Semiconductor mounts
IT1031627B (en) PROCEDURE FOR PRODUCING SILICON MONOCRYSTALS WITH UNIFORMLY P OROGED CONDUCTIVITY
IT1054204B (en) METHOD FOR THE MANUFACTURE OF SEMICONDUCTIVE DEVICES MANUFACTURED IN ACCORDANCE WITH THIS METHOD
IT1056163B (en) PROCEDURE FOR PRODUCING HALOGEN ANTHRACHINONS
RO68478A (en) PROCESS FOR THE PREPARATION OF 3-METHYLENEFONSULFOXES