IT1020026B - METHOD OF DEPOSIT OF AN EPITAXIAL LAYER - Google Patents

METHOD OF DEPOSIT OF AN EPITAXIAL LAYER

Info

Publication number
IT1020026B
IT1020026B IT2640974A IT2640974A IT1020026B IT 1020026 B IT1020026 B IT 1020026B IT 2640974 A IT2640974 A IT 2640974A IT 2640974 A IT2640974 A IT 2640974A IT 1020026 B IT1020026 B IT 1020026B
Authority
IT
Italy
Prior art keywords
deposit
epitaxial layer
epitaxial
layer
Prior art date
Application number
IT2640974A
Other languages
Italian (it)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT1020026B publication Critical patent/IT1020026B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
IT2640974A 1973-08-21 1974-08-19 METHOD OF DEPOSIT OF AN EPITAXIAL LAYER IT1020026B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7311470A NL7311470A (en) 1973-08-21 1973-08-21 METHOD OF DEPOSITING AN EPITAXIAL

Publications (1)

Publication Number Publication Date
IT1020026B true IT1020026B (en) 1977-12-20

Family

ID=19819436

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2640974A IT1020026B (en) 1973-08-21 1974-08-19 METHOD OF DEPOSIT OF AN EPITAXIAL LAYER

Country Status (6)

Country Link
JP (1) JPS5051668A (en)
BE (1) BE818985A (en)
DE (1) DE2438588A1 (en)
FR (1) FR2246067A1 (en)
IT (1) IT1020026B (en)
NL (1) NL7311470A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961997A (en) * 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
US4333792A (en) * 1977-01-03 1982-06-08 Massachusetts Institute Of Technology Enhancing epitaxy and preferred orientation
US4174422A (en) * 1977-12-30 1979-11-13 International Business Machines Corporation Growing epitaxial films when the misfit between film and substrate is large
FR2426496A1 (en) * 1978-05-23 1979-12-21 Massachusetts Inst Technology Promotion of epitaxial film growth - by forming stepped defect pattern on substrate surface
US5122223A (en) * 1979-05-29 1992-06-16 Massachusetts Institute Of Technology Graphoepitaxy using energy beams
US5156995A (en) * 1988-04-01 1992-10-20 Cornell Research Foundation, Inc. Method for reducing or eliminating interface defects in mismatched semiconductor epilayers
JP2642031B2 (en) * 1992-05-19 1997-08-20 住友電気工業株式会社 Liquid phase epitaxial growth method of compound semiconductor and compound semiconductor single crystal substrate
EP1605498A1 (en) * 2004-06-11 2005-12-14 S.O.I. Tec Silicon on Insulator Technologies S.A. A method of manufacturing a semiconductor wafer

Also Published As

Publication number Publication date
DE2438588A1 (en) 1975-02-27
NL7311470A (en) 1975-02-25
BE818985A (en) 1975-02-19
JPS5051668A (en) 1975-05-08
FR2246067B3 (en) 1977-06-10
FR2246067A1 (en) 1975-04-25

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