IT1003483B - PROCEDURE FOR THE THERMAL OXIDATION OF SILICON IN THE PRESENCE OF CHLORINE - Google Patents
PROCEDURE FOR THE THERMAL OXIDATION OF SILICON IN THE PRESENCE OF CHLORINEInfo
- Publication number
- IT1003483B IT1003483B IT19667/74A IT1966774A IT1003483B IT 1003483 B IT1003483 B IT 1003483B IT 19667/74 A IT19667/74 A IT 19667/74A IT 1966774 A IT1966774 A IT 1966774A IT 1003483 B IT1003483 B IT 1003483B
- Authority
- IT
- Italy
- Prior art keywords
- chlorine
- silicon
- procedure
- thermal oxidation
- oxidation
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2314746A DE2314746C2 (en) | 1973-03-24 | 1973-03-24 | Process for the thermal oxidation of silicon with the addition of a chlorocarbon compound |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1003483B true IT1003483B (en) | 1976-06-10 |
Family
ID=5875788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT19667/74A IT1003483B (en) | 1973-03-24 | 1974-01-23 | PROCEDURE FOR THE THERMAL OXIDATION OF SILICON IN THE PRESENCE OF CHLORINE |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5247305B2 (en) |
| CA (1) | CA1020849A (en) |
| DE (1) | DE2314746C2 (en) |
| FR (1) | FR2222312B1 (en) |
| GB (1) | GB1447184A (en) |
| IT (1) | IT1003483B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5690528A (en) * | 1979-12-22 | 1981-07-22 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Surface treatment of semiconductor device |
| US5268311A (en) * | 1988-09-01 | 1993-12-07 | International Business Machines Corporation | Method for forming a thin dielectric layer on a substrate |
| US5139869A (en) * | 1988-09-01 | 1992-08-18 | Wolfgang Euen | Thin dielectric layer on a substrate |
| EP0356557B1 (en) * | 1988-09-01 | 1994-12-21 | International Business Machines Corporation | Thin dielectric layer on a substrate and method for forming such a layer |
-
1973
- 1973-03-24 DE DE2314746A patent/DE2314746C2/en not_active Expired
-
1974
- 1974-01-09 GB GB99574A patent/GB1447184A/en not_active Expired
- 1974-01-23 IT IT19667/74A patent/IT1003483B/en active
- 1974-02-13 FR FR7405840A patent/FR2222312B1/fr not_active Expired
- 1974-03-08 CA CA194,529A patent/CA1020849A/en not_active Expired
- 1974-03-20 JP JP49031104A patent/JPS5247305B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5247305B2 (en) | 1977-12-01 |
| CA1020849A (en) | 1977-11-15 |
| GB1447184A (en) | 1976-08-25 |
| FR2222312B1 (en) | 1976-12-03 |
| JPS5010081A (en) | 1975-02-01 |
| DE2314746C2 (en) | 1983-11-17 |
| DE2314746A1 (en) | 1974-09-26 |
| FR2222312A1 (en) | 1974-10-18 |
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