IN2014MU01293A - - Google Patents

Info

Publication number
IN2014MU01293A
IN2014MU01293A IN1293MU2014A IN2014MU01293A IN 2014MU01293 A IN2014MU01293 A IN 2014MU01293A IN 1293MU2014 A IN1293MU2014 A IN 1293MU2014A IN 2014MU01293 A IN2014MU01293 A IN 2014MU01293A
Authority
IN
India
Application number
Inventor
Philip Klipstein
Original Assignee
Semi Conductor Devices – An Elbit Systems Rafael Partnership
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semi Conductor Devices – An Elbit Systems Rafael Partnership filed Critical Semi Conductor Devices – An Elbit Systems Rafael Partnership
Publication of IN2014MU01293A publication Critical patent/IN2014MU01293A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
IN1293MU2014 2013-04-22 2014-04-07 IN2014MU01293A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IL225872A IL225872A (en) 2013-04-22 2013-04-22 Semiconductor barrier photo-detector

Publications (1)

Publication Number Publication Date
IN2014MU01293A true IN2014MU01293A (en) 2015-09-04

Family

ID=50439224

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1293MU2014 IN2014MU01293A (en) 2013-04-22 2014-04-07

Country Status (4)

Country Link
US (2) US9627563B2 (en)
EP (1) EP2797122B1 (en)
IL (2) IL225872A (en)
IN (1) IN2014MU01293A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9548408B2 (en) * 2014-04-15 2017-01-17 L-3 Communications Cincinnati Electronics Corporation Tunneling barrier infrared detector devices
US11043604B2 (en) * 2015-07-28 2021-06-22 University Of Rochester Low dark current, resonant cavity-enhanced infrared photodetectors
JP6787240B2 (en) * 2017-04-26 2020-11-18 住友電気工業株式会社 Infrared detection semiconductor device
US11489084B2 (en) * 2018-05-11 2022-11-01 Nec Corporation Photodetection element
US11121302B2 (en) 2018-10-11 2021-09-14 SeeQC, Inc. System and method for superconducting multi-chip module
FR3105410B1 (en) 2019-12-20 2022-01-14 Thales Sa Radiation detector and associated manufacturing method
CN115148843B (en) * 2022-07-04 2023-10-31 安徽大学 Wide-spectrum response infrared detector based on asymmetric potential barrier energy band structure

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6740958B2 (en) 1985-09-25 2004-05-25 Renesas Technology Corp. Semiconductor memory device
JPH0276262A (en) * 1988-09-12 1990-03-15 Fujitsu Ltd Semiconductor device
US6635907B1 (en) * 1999-11-17 2003-10-21 Hrl Laboratories, Llc Type II interband heterostructure backward diodes
IL156744A (en) * 2003-07-02 2011-02-28 Semi Conductor Devices An Elbit Systems Rafael Partnership Depletion-less photodiode with suppressed dark current
US7473941B2 (en) 2005-08-15 2009-01-06 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Structures for reducing operating voltage in a semiconductor device
US7687871B2 (en) * 2006-03-19 2010-03-30 Shimon Maimon Reduced dark current photodetector
IL174844A (en) 2006-04-06 2011-02-28 Semi Conductor Devices An Elbit Systems Rafael Partnership Unipolar semiconductor photodetector with suppressed dark current and method for producing the same
US7737411B2 (en) 2007-10-11 2010-06-15 California Institute Of Technology nBn and pBp infrared detectors with graded barrier layer, graded absorption layer, or chirped strained layer super lattice absorption layer
WO2010036956A1 (en) 2008-09-25 2010-04-01 California Institute Of Technology High operating temperature barrier infrared detector with tailorable cutoff wavelength
JP5288357B2 (en) 2009-02-13 2013-09-11 独立行政法人産業技術総合研究所 Heterojunction bipolar phototransistor
WO2011050322A1 (en) 2009-10-23 2011-04-28 Lockheed Martin Corporation Barrier photodetector with planar top layer
US8835979B1 (en) * 2010-06-04 2014-09-16 Hrl Laboratories, Llc Compound-barrier infrared photodetector
US20120280350A1 (en) * 2011-05-03 2012-11-08 Raytheon Company Barrier device position sensitive detector
US9054247B2 (en) * 2012-06-25 2015-06-09 Northwestern University Single-photon nano-injection detectors
US9024296B2 (en) * 2013-01-04 2015-05-05 Mani Sundaram Focal plane array with pixels defined by modulation of surface Fermi energy
US9379271B2 (en) * 2013-05-24 2016-06-28 The United States Of America As Represented By The Secretary Of The Army Variable range photodetector and method thereof
US9196769B2 (en) * 2013-06-25 2015-11-24 L-3 Communications Cincinnati Electronics Corporation Superlattice structures and infrared detector devices incorporating the same

Also Published As

Publication number Publication date
IL225872A (en) 2015-03-31
US9761751B2 (en) 2017-09-12
US20170179327A1 (en) 2017-06-22
EP2797122A2 (en) 2014-10-29
IL231906A0 (en) 2014-08-31
EP2797122B1 (en) 2022-03-02
EP2797122A3 (en) 2015-01-07
US9627563B2 (en) 2017-04-18
US20140312303A1 (en) 2014-10-23

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