IN2014KN02866A - - Google Patents

Info

Publication number
IN2014KN02866A
IN2014KN02866A IN2866KON2014A IN2014KN02866A IN 2014KN02866 A IN2014KN02866 A IN 2014KN02866A IN 2866KON2014 A IN2866KON2014 A IN 2866KON2014A IN 2014KN02866 A IN2014KN02866 A IN 2014KN02866A
Authority
IN
India
Prior art keywords
layer
buffer layer
absorber
thin film
solar cells
Prior art date
Application number
Other languages
English (en)
Inventor
Thomas Happ
Stefan Jost
Jörg Palm
Stephan Pohlner
Thomas Dalibor
Roland Dietmüller
Original Assignee
Bengbu Design & Res Inst For Glass Industry
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bengbu Design & Res Inst For Glass Industry filed Critical Bengbu Design & Res Inst For Glass Industry
Publication of IN2014KN02866A publication Critical patent/IN2014KN02866A/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/126Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/128Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/16Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169Thin semiconductor films on metallic or insulating substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/16Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
IN2866KON2014 2012-06-20 2013-06-19 IN2014KN02866A (enrdf_load_stackoverflow)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP12172699 2012-06-20
PCT/EP2013/062703 WO2013189968A1 (de) 2012-06-20 2013-06-19 SCHICHTSYSTEM FÜR DÜNNSCHICHTSOLARZELLEN MIT NaxInlSyClz-PUFFERSCHICHT

Publications (1)

Publication Number Publication Date
IN2014KN02866A true IN2014KN02866A (enrdf_load_stackoverflow) 2015-05-08

Family

ID=47002500

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2866KON2014 IN2014KN02866A (enrdf_load_stackoverflow) 2012-06-20 2013-06-19

Country Status (8)

Country Link
US (1) US9871155B2 (enrdf_load_stackoverflow)
EP (1) EP2865011B1 (enrdf_load_stackoverflow)
JP (1) JP5985052B2 (enrdf_load_stackoverflow)
KR (1) KR101742541B1 (enrdf_load_stackoverflow)
CN (1) CN105144401B (enrdf_load_stackoverflow)
ES (1) ES2772449T3 (enrdf_load_stackoverflow)
IN (1) IN2014KN02866A (enrdf_load_stackoverflow)
WO (1) WO2013189968A1 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9382618B2 (en) * 2014-07-18 2016-07-05 UChicago Argnonne, LLC Oxygen-free atomic layer deposition of indium sulfide
CN107210187B (zh) * 2014-12-22 2020-08-21 蚌埠玻璃工业设计研究院 用于生产用于具有硫化铟钠缓冲层的薄膜太阳能电池的层系统的方法
KR101671002B1 (ko) 2015-07-24 2016-11-01 청주대학교 산학협력단 태양전지 반사방지막 및 그 제조방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4442824C1 (de) 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
JPH11204810A (ja) * 1998-01-08 1999-07-30 Asahi Chem Ind Co Ltd 化合物半導体太陽電池
DE19956735B4 (de) 1999-11-25 2008-08-21 Shell Erneuerbare Energien Gmbh Dünnfilmsolarzelle mit einer Chalkopyritverbindung und einer Titan und Sauerstoff enthaltenden Verbindung
FR2820241B1 (fr) 2001-01-31 2003-09-19 Saint Gobain Substrat transparent muni d'une electrode
EP2188406B1 (en) * 2007-09-12 2018-03-07 Flisom AG Method for manufacturing a compound film
US20090235987A1 (en) 2008-03-24 2009-09-24 Epv Solar, Inc. Chemical Treatments to Enhance Photovoltaic Performance of CIGS
DE102008024230A1 (de) 2008-05-19 2009-11-26 Avancis Gmbh & Co. Kg Schichtsystem für Solarzellen
JP2011204810A (ja) 2010-03-25 2011-10-13 Sumitomo Bakelite Co Ltd 波長変換部材および光起電装置

Also Published As

Publication number Publication date
WO2013189968A1 (de) 2013-12-27
ES2772449T3 (es) 2020-07-07
JP2015520521A (ja) 2015-07-16
EP2865011B1 (de) 2019-11-13
US20150295105A1 (en) 2015-10-15
CN105144401A (zh) 2015-12-09
US9871155B2 (en) 2018-01-16
CN105144401B (zh) 2018-02-09
EP2865011A1 (de) 2015-04-29
JP5985052B2 (ja) 2016-09-06
KR101742541B1 (ko) 2017-06-01
KR20150013328A (ko) 2015-02-04

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