IN2014KN01697A - - Google Patents

Info

Publication number
IN2014KN01697A
IN2014KN01697A IN1697KON2014A IN2014KN01697A IN 2014KN01697 A IN2014KN01697 A IN 2014KN01697A IN 1697KON2014 A IN1697KON2014 A IN 1697KON2014A IN 2014KN01697 A IN2014KN01697 A IN 2014KN01697A
Authority
IN
India
Prior art keywords
metal material
base
material base
average
protrusions
Prior art date
Application number
Inventor
Masayasu Nagoshi
Kaoru Sato
Hisato Noro
Kazuhiko Baba
Seiichi Watanabe
Souki Yoshida
Original Assignee
Jfe Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jfe Steel Corp filed Critical Jfe Steel Corp
Publication of IN2014KN01697A publication Critical patent/IN2014KN01697A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/06—Etching of iron or steel

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • ing And Chemical Polishing (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrolytic Production Of Metals (AREA)

Abstract

22A metal material is provided with a metal material base (2) and a reforming layer formed on the surface of the metal material base (2) wherein the reforming layer has an average of three or more protrusions (3) in a 10 µm range the protrusions protruding from the surface of the metal material base (2) and having an average diameter of 1 µm or less when viewed from a direction that is perpendicular to the surface of the metal material base (2). Preferably the reforming layer is provided with an average of one or more of the following protrusions in a 10 µm range that is a protrusion provided with a base part protruding from the surface of the metal material base (2) and a tip part formed on the end of the base part and having a constricted structure in which the outer diameter of the base part is smaller than the outer diameter of the tip part and an average diameter of 1 µm or less when viewed from a direction that is perpendicular to the surface of the metal material base (2). As a consequence it is possible to provide a metal material exhibiting new features such as hydrophilic property and light emitting property.
IN1697KON2014 2012-02-24 2013-02-21 IN2014KN01697A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2012038555 2012-02-24
JP2012038557 2012-02-24
JP2012038553 2012-02-24
PCT/JP2013/054413 WO2013125658A1 (en) 2012-02-24 2013-02-21 Metal material, and surface treatment method and device

Publications (1)

Publication Number Publication Date
IN2014KN01697A true IN2014KN01697A (en) 2015-10-23

Family

ID=49005835

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1697KON2014 IN2014KN01697A (en) 2012-02-24 2013-02-21

Country Status (7)

Country Link
EP (1) EP2818579A4 (en)
JP (1) JP5817907B2 (en)
KR (1) KR101687462B1 (en)
CN (1) CN104114747A (en)
IN (1) IN2014KN01697A (en)
TW (1) TWI472424B (en)
WO (1) WO2013125658A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6498091B2 (en) * 2015-09-25 2019-04-10 Ｊｘ金属株式会社 Surface-treated metal foil, laminate, printed wiring board, semiconductor package, electronic equipment
US11541516B2 (en) * 2019-09-25 2023-01-03 Snap-On Incorporated Fastener retention and anti-camout tool bit
CN111805022A (en) * 2020-06-04 2020-10-23 南方科技大学 Plasma-assisted electrolytic machining method and implementation device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227241A (en) * 1983-06-09 1984-12-20 Taishi Shokuhin Kogyo Kk Preparation of lactified soya milk
JPH04136198A (en) * 1990-09-26 1992-05-11 Nau Chem:Yugen Method of electroplating
JPH06297252A (en) * 1993-04-09 1994-10-25 Sony Corp Fine processing method and apparatus
JPH09241865A (en) * 1996-03-01 1997-09-16 Kawasaki Steel Corp Laminated steel sheet with excellent film adhesion and corrosion resistance
AU8119601A (en) * 2000-08-10 2002-02-25 Nutool Inc Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence
AUPR129900A0 (en) * 2000-11-08 2000-11-30 Chang, Chak Man Thomas Plasma electroplating
JP4189476B2 (en) * 2001-03-14 2008-12-03 日鉱金属株式会社 Sputtering target with less generation of particles, backing plate, apparatus in sputtering apparatus, and roughening method
JP2005329451A (en) * 2004-05-21 2005-12-02 Fuji Photo Film Co Ltd Method for working surface of aluminum plate, base material for lithographic printing plate and lithographic printing plate
JP5010966B2 (en) * 2006-08-21 2012-08-29 株式会社神戸製鋼所 Water repellent paint and water repellent metal plate
WO2008099618A1 (en) * 2007-02-15 2008-08-21 National University Corporation Hokkaido University Method for producing conductor fine particles
CN102517617B (en) * 2007-03-02 2014-12-31 古河电气工业株式会社 Device for surface roughening copper plate, and surface roughened copper plate
JP2010287648A (en) * 2009-06-10 2010-12-24 Seiko Epson Corp Manufacturing method of semiconductor device
JP5569259B2 (en) * 2010-08-26 2014-08-13 Ｊｆｅスチール株式会社 Method for producing surface-modified conductive material
CN102041540A (en) * 2011-01-13 2011-05-04 中国科学院苏州纳米技术与纳米仿生研究所 Anodic aluminum oxide template with three-dimensional gradual-changed hole array nanostructure and preparation method of anodic aluminum oxide template

Also Published As

Publication number Publication date
WO2013125658A1 (en) 2013-08-29
JP5817907B2 (en) 2015-11-18
EP2818579A1 (en) 2014-12-31
TW201341176A (en) 2013-10-16
EP2818579A4 (en) 2015-11-11
KR20140112559A (en) 2014-09-23
KR101687462B1 (en) 2016-12-16
CN104114747A (en) 2014-10-22
TWI472424B (en) 2015-02-11
JPWO2013125658A1 (en) 2015-07-30

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