IN2014DN03459A - - Google Patents

Download PDF

Info

Publication number
IN2014DN03459A
IN2014DN03459A IN3459DEN2014A IN2014DN03459A IN 2014DN03459 A IN2014DN03459 A IN 2014DN03459A IN 3459DEN2014 A IN3459DEN2014 A IN 3459DEN2014A IN 2014DN03459 A IN2014DN03459 A IN 2014DN03459A
Authority
IN
India
Prior art keywords
charges
storage nodes
photodiodes
during
phases
Prior art date
Application number
Inventor
Frédéric Mayer
Henri Bugnet
Original Assignee
E2V Semiconductors
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E2V Semiconductors filed Critical E2V Semiconductors
Publication of IN2014DN03459A publication Critical patent/IN2014DN03459A/en

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/711—Time delay and integration [TDI] registers; TDI shift registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

The invention relates to moving image sensors having integration of charges using active pixels in CMOS technology. The sensor comprises N fines of pixels, and each pixel of generally square shape comprises two (but can also comprise three or four) photodiodes (PPDz , PPDbi) and charge storage nodes (NDCi, NDEi), having means for transferring charges from each photodiode to one or the other of the storage nodes. The control of the transfer of the photodiodes to one and then to the other one of the storage nodes is carried out in such a manner that a storage node successively receives, during two successive phases of a periodic cycle, the charges of two photodiodes which detected the same image portion during the two phases. The charges received by one of the storage nodes during the first phase are added to the charges received by the other storage node in the following phase.
IN3459DEN2014 2011-11-04 2012-10-18 IN2014DN03459A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1160040A FR2982418B1 (en) 2011-11-04 2011-11-04 SCANNING IMAGE SENSOR AND DIGITAL MULTIPURPOSE SUMMATION
PCT/EP2012/070658 WO2013064380A1 (en) 2011-11-04 2012-10-18 Moving image sensor having multiphase digital summation

Publications (1)

Publication Number Publication Date
IN2014DN03459A true IN2014DN03459A (en) 2015-06-26

Family

ID=47071263

Family Applications (1)

Application Number Title Priority Date Filing Date
IN3459DEN2014 IN2014DN03459A (en) 2011-11-04 2012-10-18

Country Status (9)

Country Link
US (1) US9253426B2 (en)
EP (1) EP2774355B1 (en)
JP (1) JP6068488B2 (en)
KR (1) KR101924674B1 (en)
CN (1) CN103918253B (en)
FR (1) FR2982418B1 (en)
IL (1) IL232216B (en)
IN (1) IN2014DN03459A (en)
WO (1) WO2013064380A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102124601B1 (en) * 2013-06-21 2020-06-19 삼성전자주식회사 Apparatas and method for displaying an information of extracting a subject distance in an electronic device
CN105741239B (en) * 2014-12-11 2018-11-30 合肥美亚光电技术股份有限公司 Generation method, device and the panorama machine for shooting tooth of tooth panoramic picture
US9787928B2 (en) * 2015-01-06 2017-10-10 Forza Silicon Corporation Layout and timing schemes for ping-pong readout architecture
US10130280B2 (en) 2015-05-13 2018-11-20 Raytheon Company Detector arrays with electronically adjustable detector positions
US10110840B2 (en) * 2016-10-25 2018-10-23 Semiconductor Components Industries, Llc Image sensor pixels with overflow capabilities
JP2018137569A (en) * 2017-02-21 2018-08-30 ソニーセミコンダクタソリューションズ株式会社 Distance-measuring device and distance-measuring method
CN109216394B (en) * 2018-10-31 2020-11-24 锐芯微电子股份有限公司 CMOS-TDI image sensor and forming method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2906080B1 (en) * 2006-09-19 2008-11-28 E2V Semiconductors Soc Par Act SCALING IMAGE SENSOR WITH SUCCESSIVE INTEGRATIONS AND SOMMATION, WITH ACTIVE CMOS PIXELS
US7923763B2 (en) * 2007-03-08 2011-04-12 Teledyne Licensing, Llc Two-dimensional time delay integration visible CMOS image sensor
JP4582198B2 (en) * 2008-05-30 2010-11-17 ソニー株式会社 Solid-state imaging device, imaging device, and driving method of solid-state imaging device
FR2959902B1 (en) * 2010-05-04 2013-08-23 E2V Semiconductors LINEAR IMAGE SENSOR WITH SCROLL AND ANALOG AND DIGITAL SUMMIT AND METHOD THEREOF

Also Published As

Publication number Publication date
FR2982418A1 (en) 2013-05-10
JP6068488B2 (en) 2017-01-25
CN103918253B (en) 2017-08-04
KR20140090235A (en) 2014-07-16
KR101924674B1 (en) 2019-02-20
EP2774355A1 (en) 2014-09-10
US9253426B2 (en) 2016-02-02
IL232216A0 (en) 2014-06-30
US20140263969A1 (en) 2014-09-18
WO2013064380A1 (en) 2013-05-10
CN103918253A (en) 2014-07-09
EP2774355B1 (en) 2019-08-07
FR2982418B1 (en) 2014-05-30
IL232216B (en) 2018-01-31
JP2014533025A (en) 2014-12-08

Similar Documents

Publication Publication Date Title
IN2014DN03459A (en)
EP2652788A4 (en) High charge capacity pixel architecture, photoelectric conversion apparatus, radiation image pickup system and methods for same
GB201313617D0 (en) Solid-state image sensor, camera and method of driving solid-state sensor
GB201117319D0 (en) Active pixel image sensor
JP2012501578A5 (en)
JP2015091025A5 (en)
MX2017002981A (en) Variable resolution pixel.
WO2012061018A3 (en) Digital camera providing high dynamic range images
TW200704139A (en) Camera sensor
PH12014000223A1 (en) Imaging apparatus, imaging system, and method for driving imaging apparatus
WO2012088338A3 (en) Photodetecting imager devices having correlated double sampling and associated methods
JP2014532361A5 (en)
JP2012090118A5 (en)
EG27135A (en) Using seismic sensor transfer functions for high fidelity seismic imaging
GB2548445A (en) RGBZ pixel cell unit for an RGBZ image sensor
IL214711A (en) Correcting frame-to-frame image changes due to motion for three dimensional (3-d) persistent observations
JP2015046730A5 (en)
WO2014127376A3 (en) High dynamic range cmos image sensor having anti-blooming properties and associated methods
WO2011041118A3 (en) Methods for image capture and readout
MY159215A (en) Solid-state image pickup device
JP2016119652A5 (en)
EP3651222A4 (en) Photoelectric conversion element, optical sensor, image capturing element, and compound
NZ726074A (en) Systems and methods for processing event timing images
JP2014106478A5 (en)
JP2015115637A (en) Solid-state imaging apparatus