IN2014CN04171A - - Google Patents

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Publication number
IN2014CN04171A
IN2014CN04171A IN4171CHN2014A IN2014CN04171A IN 2014CN04171 A IN2014CN04171 A IN 2014CN04171A IN 4171CHN2014 A IN4171CHN2014 A IN 4171CHN2014A IN 2014CN04171 A IN2014CN04171 A IN 2014CN04171A
Authority
IN
India
Prior art keywords
access
group
memory blocks
ports
port
Prior art date
Application number
Inventor
Ephrem C Wu
Gyanesh Saharia
Original Assignee
Xilinx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xilinx Inc filed Critical Xilinx Inc
Publication of IN2014CN04171A publication Critical patent/IN2014CN04171A/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1075—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for multiport memories each having random access ports and serial ports, e.g. video RAM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/023—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in clock generator or timing circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Static Random-Access Memory (AREA)
  • Data Exchanges In Wide-Area Networks (AREA)
  • Dram (AREA)
  • Information Transfer Systems (AREA)

Abstract

A memory arrangement (200) includes a plurality of memory blocks (208) a first group of access ports (204) and a second group of access ports (206). Routing circuitry (209) couples each pair of the first and second groups of access ports to a respective one of the memory blocks. Each pair includes a first access port from the first group and a second access port from the second group. The first access port has write access to a first portion of the respective memory blocks but not to a second portion of the memory block and has read access to the second portion but not to the first portion. The second access port has write access to the second portion but not to the first portion and has read access to the first portion but not to the second portion.
IN4171CHN2014 2011-12-07 2012-09-28 IN2014CN04171A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/314,079 US8611175B2 (en) 2011-12-07 2011-12-07 Contention-free memory arrangement
PCT/US2012/058039 WO2013085606A2 (en) 2011-12-07 2012-09-28 Contention-free memory arrangement

Publications (1)

Publication Number Publication Date
IN2014CN04171A true IN2014CN04171A (en) 2015-07-17

Family

ID=47172872

Family Applications (1)

Application Number Title Priority Date Filing Date
IN4171CHN2014 IN2014CN04171A (en) 2011-12-07 2012-09-28

Country Status (7)

Country Link
US (1) US8611175B2 (en)
EP (1) EP2788983B1 (en)
JP (1) JP5947397B2 (en)
KR (1) KR101816970B1 (en)
CN (1) CN104106115B (en)
IN (1) IN2014CN04171A (en)
WO (1) WO2013085606A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8947931B1 (en) * 2014-06-13 2015-02-03 Sandisk Technologies Inc. Memory module
US9864710B2 (en) * 2015-03-30 2018-01-09 EMC IP Holding Company LLC Writing data to storage via a PCI express fabric having a fully-connected mesh topology
JP2018032141A (en) * 2016-08-23 2018-03-01 東芝メモリ株式会社 Semiconductor device
US10141938B2 (en) 2016-09-21 2018-11-27 Xilinx, Inc. Stacked columnar integrated circuits
US10635331B2 (en) * 2017-07-05 2020-04-28 Western Digital Technologies, Inc. Distribution of logical-to-physical address entries across bank groups
US10346093B1 (en) * 2018-03-16 2019-07-09 Xilinx, Inc. Memory arrangement for tensor data
JP2022509348A (en) * 2018-10-23 2022-01-20 エトロン・テクノロジー・アメリカ・インコーポレイテッド Buses and systems used in superscalar memory ICs and superscalar memory ICs

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62145172A (en) * 1985-12-20 1987-06-29 Fujitsu Ltd Input/output buffer provided with testing circuit
JP2546901B2 (en) * 1989-12-05 1996-10-23 株式会社日立製作所 Communication control device
JPH0668022A (en) * 1992-08-18 1994-03-11 Oki Electric Ind Co Ltd Direct memory access device
GB9618137D0 (en) * 1996-08-30 1996-10-09 Sgs Thomson Microelectronics Improvements in or relating to an ATM switch
JP2000209172A (en) * 1999-01-14 2000-07-28 Matsushita Electric Ind Co Ltd Multiplexer and multiplexing system
KR100546331B1 (en) * 2003-06-03 2006-01-26 삼성전자주식회사 Multi-Port memory device with stacked banks
DE102004038211A1 (en) * 2004-08-05 2006-03-16 Robert Bosch Gmbh Message manager and method for controlling the access to data of a message memory of a communication module
KR100655081B1 (en) 2005-12-22 2006-12-08 삼성전자주식회사 Multi-port semiconductor memory device having variable access path and method therefore
US8861300B2 (en) * 2009-06-30 2014-10-14 Infinera Corporation Non-blocking multi-port memory formed from smaller multi-port memories
US8547774B2 (en) * 2010-01-29 2013-10-01 Mosys, Inc. Hierarchical multi-bank multi-port memory organization

Also Published As

Publication number Publication date
JP2015506025A (en) 2015-02-26
EP2788983A2 (en) 2014-10-15
WO2013085606A2 (en) 2013-06-13
US8611175B2 (en) 2013-12-17
KR20140102718A (en) 2014-08-22
US20130148450A1 (en) 2013-06-13
CN104106115B (en) 2017-03-22
EP2788983B1 (en) 2016-04-06
KR101816970B1 (en) 2018-01-09
JP5947397B2 (en) 2016-07-06
CN104106115A (en) 2014-10-15
WO2013085606A3 (en) 2014-08-14

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