IN2014CN01055A - - Google Patents

Info

Publication number
IN2014CN01055A
IN2014CN01055A IN1055CHN2014A IN2014CN01055A IN 2014CN01055 A IN2014CN01055 A IN 2014CN01055A IN 1055CHN2014 A IN1055CHN2014 A IN 1055CHN2014A IN 2014CN01055 A IN2014CN01055 A IN 2014CN01055A
Authority
IN
India
Prior art keywords
anode
direct conversion
layer
cathode
conversion material
Prior art date
Application number
Inventor
Ewald Rössl
Roland Proksa
Original Assignee
Koninkl Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Nv filed Critical Koninkl Philips Nv
Publication of IN2014CN01055A publication Critical patent/IN2014CN01055A/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/24Measuring radiation intensity with semiconductor detectors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/24Measuring radiation intensity with semiconductor detectors
    • G01T1/241Electrode arrangements, e.g. continuous or parallel strips or the like
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/24Measuring radiation intensity with semiconductor detectors
    • G01T1/247Detector read-out circuitry

Abstract

Adetector array includes at least one direct conversion detector pixel (114 114 M ) configured to detect photons of poly chromatic ionizing radiation. The pixel includes a cathode layer (116) an anode layer (118) including an anode electrode (118 118 M ) for each of the at least one detector pixels a direct conversion material (120) disposed between the cathode layer and the anode layer anda gate electrode disposed in the direct conversion material parallelto and between the cathode and anode layers.
IN1055CHN2014 2011-08-30 2012-08-16 IN2014CN01055A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161528785P 2011-08-30 2011-08-30
PCT/IB2012/054170 WO2013030708A2 (en) 2011-08-30 2012-08-16 Photon counting detector

Publications (1)

Publication Number Publication Date
IN2014CN01055A true IN2014CN01055A (en) 2015-04-10

Family

ID=47018297

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1055CHN2014 IN2014CN01055A (en) 2011-08-30 2012-08-16

Country Status (8)

Country Link
US (1) US9423515B2 (en)
EP (1) EP2751596B1 (en)
JP (1) JP6335120B2 (en)
CN (1) CN103765244B (en)
BR (1) BR112014004344A2 (en)
IN (1) IN2014CN01055A (en)
RU (1) RU2594606C2 (en)
WO (1) WO2013030708A2 (en)

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WO2014196479A1 (en) * 2013-06-06 2014-12-11 株式会社 東芝 Photon counting device
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EP3444826A1 (en) * 2017-08-14 2019-02-20 Koninklijke Philips N.V. Low profile anti scatter and anti charge sharing grid for photon counting computed tomography
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Also Published As

Publication number Publication date
CN103765244B (en) 2016-06-29
EP2751596B1 (en) 2017-07-19
WO2013030708A2 (en) 2013-03-07
US9423515B2 (en) 2016-08-23
RU2594606C2 (en) 2016-08-20
BR112014004344A2 (en) 2017-05-30
US20140183371A1 (en) 2014-07-03
JP6335120B2 (en) 2018-05-30
CN103765244A (en) 2014-04-30
JP2014531574A (en) 2014-11-27
RU2014112028A (en) 2015-10-10
EP2751596A2 (en) 2014-07-09
WO2013030708A3 (en) 2013-06-27

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