IN2014CN00661A - - Google Patents

Info

Publication number
IN2014CN00661A
IN2014CN00661A IN661CHN2014A IN2014CN00661A IN 2014CN00661 A IN2014CN00661 A IN 2014CN00661A IN 661CHN2014 A IN661CHN2014 A IN 661CHN2014A IN 2014CN00661 A IN2014CN00661 A IN 2014CN00661A
Authority
IN
India
Prior art keywords
zone
ingot
dopant impurities
determining
charge carriers
Prior art date
Application number
Inventor
Sébastien DUBOIS
Nicolas Enjalbert
Jordi Veirman
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Publication of IN2014CN00661A publication Critical patent/IN2014CN00661A/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/041—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

The method of determining concentrations of dopant impurities in a silicon sample involves the provision of a silicon ingot comprising donor type dopant impurities and acceptor type dopant impurities a step (F1) for determining the position of a first zone of the ingot in which there takes place a transition between a first conductivity type and a second opposite conductivity type a step (F2) for measuring the concentration of free charge carriers in a second zone of the ingot separate from the first zone using the Hall effect Fourier transform infrared spectroscopy or a method using the lifetime of the charge carriers and a step (F3) for determining the concentrations of dopant impurities in the sample based on the position of the first zone and the concentration of free charge carriers in the second zone of the ingot.
IN661CHN2014 2011-07-27 2012-07-20 IN2014CN00661A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1102354A FR2978548A1 (en) 2011-07-27 2011-07-27 DETERMINATION OF DOPING CONTENT IN A SILICON COMPENSATION SAMPLE
PCT/FR2012/000299 WO2013014342A1 (en) 2011-07-27 2012-07-20 Determining the dopant content of a compensated silicon sample

Publications (1)

Publication Number Publication Date
IN2014CN00661A true IN2014CN00661A (en) 2015-04-03

Family

ID=46717885

Family Applications (1)

Application Number Title Priority Date Filing Date
IN661CHN2014 IN2014CN00661A (en) 2011-07-27 2012-07-20

Country Status (10)

Country Link
US (1) US20140163913A1 (en)
EP (1) EP2737305B1 (en)
JP (1) JP6073316B2 (en)
KR (1) KR20140050084A (en)
CN (1) CN103827661B (en)
BR (1) BR112014001671A2 (en)
ES (1) ES2556056T3 (en)
FR (1) FR2978548A1 (en)
IN (1) IN2014CN00661A (en)
WO (1) WO2013014342A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3005740B1 (en) 2013-05-14 2015-06-12 Commissariat Energie Atomique DETERMINATION OF CONCENTRATIONS IN DOPING ACCEPTORS AND DONORS
US10215796B2 (en) * 2015-05-11 2019-02-26 Northwestern University System and method for deducing charge density gradients in doped semiconductors
FR3055563B1 (en) * 2016-09-08 2018-09-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives METHOD OF SORTING SILICON PLATES according to their lifetime
JP7141849B2 (en) * 2018-05-16 2022-09-26 株式会社サイオクス Nitride crystal substrate and method for manufacturing nitride crystal substrate
US11585010B2 (en) 2019-06-28 2023-02-21 Globalwafers Co., Ltd. Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant
RU2709687C1 (en) * 2019-08-29 2019-12-19 федеральное государственное бюджетное образовательное учреждение высшего образования "Воронежский государственный университет" (ФГБОУ ВО "ВГУ") Method of determining concentration of electrically active donor impurity in surface layers of silicon by nondestructive method of ultra-soft x-ray emission spectroscopy
US11866844B2 (en) 2020-12-31 2024-01-09 Globalwafers Co., Ltd. Methods for producing a single crystal silicon ingot using a vaporized dopant
US11795569B2 (en) 2020-12-31 2023-10-24 Globalwafers Co., Ltd. Systems for producing a single crystal silicon ingot using a vaporized dopant

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3449177A (en) * 1966-06-30 1969-06-10 Atomic Energy Commission Radiation detector
CN1063159A (en) * 1992-01-23 1992-07-29 中国科学院上海技术物理研究所 Measure the new method of semiconductor nonequilibrium carrier lifetime
JPH09129523A (en) * 1995-10-31 1997-05-16 Sumitomo Sitix Corp Silicon wafer and quantitative measuring method using the same
JPH11186350A (en) * 1997-12-16 1999-07-09 Dainippon Screen Mfg Co Ltd Recombination life time measuring method for minority carriers of semiconductor
JP3651440B2 (en) * 2002-01-16 2005-05-25 信越半導体株式会社 Silicon wafer evaluation method and etching solution thereof
JP5360789B2 (en) * 2006-07-06 2013-12-04 独立行政法人産業技術総合研究所 P-type zinc oxide thin film and method for producing the same
CN1971868A (en) * 2006-12-13 2007-05-30 中国科学院光电技术研究所 Method for measuring doping content of semiconductor based on free carrier absorption technique
US20090039478A1 (en) * 2007-03-10 2009-02-12 Bucher Charles E Method For Utilizing Heavily Doped Silicon Feedstock To Produce Substrates For Photovoltaic Applications By Dopant Compensation During Crystal Growth
CN100511623C (en) * 2007-08-20 2009-07-08 中国科学院光电技术研究所 Method for measuring semiconductor doping concentration
WO2010126639A1 (en) * 2009-04-29 2010-11-04 Calisolar, Inc. Process control for umg-si material purification
JP2010275147A (en) * 2009-05-28 2010-12-09 Sumco Corp Method for evaluating crystal defect of silicon wafer
CA2673621A1 (en) * 2009-07-21 2009-12-11 Silicium Becancour Inc. A method for evaluating umg silicon compensation

Also Published As

Publication number Publication date
EP2737305A1 (en) 2014-06-04
CN103827661B (en) 2016-05-04
BR112014001671A2 (en) 2017-02-21
WO2013014342A1 (en) 2013-01-31
JP6073316B2 (en) 2017-02-01
CN103827661A (en) 2014-05-28
EP2737305B1 (en) 2015-09-30
FR2978548A1 (en) 2013-02-01
KR20140050084A (en) 2014-04-28
ES2556056T3 (en) 2016-01-12
JP2014529181A (en) 2014-10-30
US20140163913A1 (en) 2014-06-12

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