IN2012DN01293A - - Google Patents
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- Publication number
- IN2012DN01293A IN2012DN01293A IN1293DEN2012A IN2012DN01293A IN 2012DN01293 A IN2012DN01293 A IN 2012DN01293A IN 1293DEN2012 A IN1293DEN2012 A IN 1293DEN2012A IN 2012DN01293 A IN2012DN01293 A IN 2012DN01293A
- Authority
- IN
- India
- Prior art keywords
- disclosed
- photovoltaic device
- indium nitride
- back contact
- contact
- Prior art date
Links
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23276709P | 2009-08-10 | 2009-08-10 | |
| PCT/US2010/044720 WO2011019608A1 (en) | 2009-08-10 | 2010-08-06 | Photovoltaic device back contact |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2012DN01293A true IN2012DN01293A (pl) | 2015-06-05 |
Family
ID=43533873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN1293DEN2012 IN2012DN01293A (pl) | 2009-08-10 | 2010-08-06 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20110030776A1 (pl) |
| IN (1) | IN2012DN01293A (pl) |
| TW (1) | TW201115754A (pl) |
| WO (1) | WO2011019608A1 (pl) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MY164919A (en) * | 2009-09-11 | 2018-02-15 | First Solar Inc | Photovoltaic back contact |
| US20120204957A1 (en) * | 2011-02-10 | 2012-08-16 | David Nicholls | METHOD FOR GROWING AlInGaN LAYER |
| WO2012118771A2 (en) * | 2011-02-28 | 2012-09-07 | Alliance For Sustainable Energy, Llc | Improved thin-film photovoltaic devices and methods of manufacture |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4336277A (en) * | 1980-09-29 | 1982-06-22 | The Regents Of The University Of California | Transparent electrical conducting films by activated reactive evaporation |
| US5747116A (en) * | 1994-11-08 | 1998-05-05 | Micron Technology, Inc. | Method of forming an electrical contact to a silicon substrate |
| US5986285A (en) * | 1996-11-07 | 1999-11-16 | Fuji Xerox, Co., Ltd. | Group III-V amorphous and microcrystalline optical semiconductor including hydrogen, and method of forming thereof |
| US6951689B1 (en) * | 1998-01-21 | 2005-10-04 | Canon Kabushiki Kaisha | Substrate with transparent conductive layer, and photovoltaic element |
| AU2002248199A1 (en) * | 2001-12-13 | 2003-06-30 | Midwest Research Institute | Semiconductor device with higher oxygen (o2) concentration within window layers and method for making |
| KR20060085465A (ko) * | 2005-01-24 | 2006-07-27 | 삼성전자주식회사 | 연속상 반도체 전극, 그의 제조방법 및 이를 채용한태양전지 |
| US20070111367A1 (en) * | 2005-10-19 | 2007-05-17 | Basol Bulent M | Method and apparatus for converting precursor layers into photovoltaic absorbers |
| US20090014055A1 (en) * | 2006-03-18 | 2009-01-15 | Solyndra, Inc. | Photovoltaic Modules Having a Filling Material |
| US20080135089A1 (en) * | 2006-11-15 | 2008-06-12 | General Electric Company | Graded hybrid amorphous silicon nanowire solar cells |
| US7825328B2 (en) * | 2007-04-09 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride-based multi-junction solar cell modules and methods for making the same |
| MY177448A (en) * | 2008-05-01 | 2020-09-15 | First Solar Inc | Transparent conductive materials including cadmium stannate |
-
2010
- 2010-08-06 IN IN1293DEN2012 patent/IN2012DN01293A/en unknown
- 2010-08-06 WO PCT/US2010/044720 patent/WO2011019608A1/en active Application Filing
- 2010-08-09 TW TW099126466A patent/TW201115754A/zh unknown
- 2010-08-10 US US12/805,626 patent/US20110030776A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20110030776A1 (en) | 2011-02-10 |
| TW201115754A (en) | 2011-05-01 |
| WO2011019608A1 (en) | 2011-02-17 |
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