IN2012DN01293A - - Google Patents

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Publication number
IN2012DN01293A
IN2012DN01293A IN1293DEN2012A IN2012DN01293A IN 2012DN01293 A IN2012DN01293 A IN 2012DN01293A IN 1293DEN2012 A IN1293DEN2012 A IN 1293DEN2012A IN 2012DN01293 A IN2012DN01293 A IN 2012DN01293A
Authority
IN
India
Prior art keywords
disclosed
photovoltaic device
indium nitride
back contact
contact
Prior art date
Application number
Inventor
Buller Benyamin
Gupta Akhlesh
Zafar Syed
Original Assignee
First Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by First Solar Inc filed Critical First Solar Inc
Publication of IN2012DN01293A publication Critical patent/IN2012DN01293A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A photovoltaic device back contact is disclosed. The back can include an indium nitride.
IN1293DEN2012 2009-08-10 2010-08-06 IN2012DN01293A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US23276709P 2009-08-10 2009-08-10
PCT/US2010/044720 WO2011019608A1 (en) 2009-08-10 2010-08-06 Photovoltaic device back contact

Publications (1)

Publication Number Publication Date
IN2012DN01293A true IN2012DN01293A (en) 2015-06-05

Family

ID=43533873

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1293DEN2012 IN2012DN01293A (en) 2009-08-10 2010-08-06

Country Status (4)

Country Link
US (1) US20110030776A1 (en)
IN (1) IN2012DN01293A (en)
TW (1) TW201115754A (en)
WO (1) WO2011019608A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN2012DN02167A (en) * 2009-09-11 2015-08-21 First Solar Inc
US20120204957A1 (en) * 2011-02-10 2012-08-16 David Nicholls METHOD FOR GROWING AlInGaN LAYER
WO2012118771A2 (en) * 2011-02-28 2012-09-07 Alliance For Sustainable Energy, Llc Improved thin-film photovoltaic devices and methods of manufacture

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4336277A (en) * 1980-09-29 1982-06-22 The Regents Of The University Of California Transparent electrical conducting films by activated reactive evaporation
US5747116A (en) * 1994-11-08 1998-05-05 Micron Technology, Inc. Method of forming an electrical contact to a silicon substrate
US5986285A (en) * 1996-11-07 1999-11-16 Fuji Xerox, Co., Ltd. Group III-V amorphous and microcrystalline optical semiconductor including hydrogen, and method of forming thereof
US6951689B1 (en) * 1998-01-21 2005-10-04 Canon Kabushiki Kaisha Substrate with transparent conductive layer, and photovoltaic element
AU2002248199A1 (en) * 2001-12-13 2003-06-30 Midwest Research Institute Semiconductor device with higher oxygen (o2) concentration within window layers and method for making
KR20060085465A (en) * 2005-01-24 2006-07-27 삼성전자주식회사 Continuous semiconductive electrode, process for preparing the same and solar cells using the same
US20070111367A1 (en) * 2005-10-19 2007-05-17 Basol Bulent M Method and apparatus for converting precursor layers into photovoltaic absorbers
US20090014055A1 (en) * 2006-03-18 2009-01-15 Solyndra, Inc. Photovoltaic Modules Having a Filling Material
US20080135089A1 (en) * 2006-11-15 2008-06-12 General Electric Company Graded hybrid amorphous silicon nanowire solar cells
US7825328B2 (en) * 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
WO2009135114A2 (en) * 2008-05-01 2009-11-05 First Solar, Inc. Transparent conductive materials including cadmium stannate

Also Published As

Publication number Publication date
WO2011019608A1 (en) 2011-02-17
TW201115754A (en) 2011-05-01
US20110030776A1 (en) 2011-02-10

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