IN168114B - - Google Patents
Info
- Publication number
- IN168114B IN168114B IN601/CAL/87A IN601CA1987A IN168114B IN 168114 B IN168114 B IN 168114B IN 601CA1987 A IN601CA1987 A IN 601CA1987A IN 168114 B IN168114 B IN 168114B
- Authority
- IN
- India
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US94309286A | 1986-12-18 | 1986-12-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN168114B true IN168114B (he) | 1991-02-09 |
Family
ID=25479092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN601/CAL/87A IN168114B (he) | 1986-12-18 | 1987-08-03 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JP2627901B2 (he) |
| KR (1) | KR960000061B1 (he) |
| AU (1) | AU586757B2 (he) |
| GB (1) | GB2198965B (he) |
| IN (1) | IN168114B (he) |
| IT (1) | IT1229975B (he) |
| MY (1) | MY101906A (he) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4751059A (en) * | 1986-12-05 | 1988-06-14 | Westinghouse Electric Corp. | Apparatus for growing dendritic web crystals of constant width |
| US4828808A (en) * | 1987-09-02 | 1989-05-09 | The United States Of America As Represented By The United States Department Of Energy | Apparatus for silicon web growth of higher output and improved growth stability |
| US6093244A (en) * | 1997-04-10 | 2000-07-25 | Ebara Solar, Inc. | Silicon ribbon growth dendrite thickness control system |
| KR20010108163A (ko) * | 1999-02-02 | 2001-12-07 | 로시 리차드 | 실리콘 리본의 수지상 결정의 성장 두께를 제어하는 시스템 |
| JP6028308B1 (ja) * | 2015-10-29 | 2016-11-16 | 並木精密宝石株式会社 | Ｅｆｇ法用育成炉の熱反射板構造 |
| JP5923700B1 (ja) * | 2015-11-30 | 2016-05-25 | 並木精密宝石株式会社 | 大型ｅｆｇ法用育成炉の蓋体構造 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IN161924B (he) * | 1984-10-29 | 1988-02-27 | Westinghouse Electric Corp | |
| US4751059A (en) * | 1986-12-05 | 1988-06-14 | Westinghouse Electric Corp. | Apparatus for growing dendritic web crystals of constant width |
-
1987
- 1987-08-03 IN IN601/CAL/87A patent/IN168114B/en unknown
- 1987-08-07 AU AU76689/87A patent/AU586757B2/en not_active Ceased
- 1987-08-17 KR KR1019870008980A patent/KR960000061B1/ko not_active IP Right Cessation
- 1987-08-17 IT IT8741659A patent/IT1229975B/it active
- 1987-08-18 GB GB8719475A patent/GB2198965B/en not_active Expired - Lifetime
- 1987-09-04 JP JP62222879A patent/JP2627901B2/ja not_active Expired - Lifetime
- 1987-09-28 MY MYPI87002027A patent/MY101906A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| AU586757B2 (en) | 1989-07-20 |
| IT1229975B (it) | 1991-09-20 |
| KR880007196A (ko) | 1988-08-26 |
| KR960000061B1 (ko) | 1996-01-03 |
| GB8719475D0 (en) | 1987-09-23 |
| AU7668987A (en) | 1988-06-23 |
| GB2198965B (en) | 1990-10-31 |
| GB2198965A (en) | 1988-06-29 |
| JP2627901B2 (ja) | 1997-07-09 |
| MY101906A (en) | 1992-02-15 |
| IT8741659A0 (it) | 1987-08-17 |
| JPS63166788A (ja) | 1988-07-09 |