IN154273B - - Google Patents

Info

Publication number
IN154273B
IN154273B IN858/CAL/81A IN858CA1981A IN154273B IN 154273 B IN154273 B IN 154273B IN 858CA1981 A IN858CA1981 A IN 858CA1981A IN 154273 B IN154273 B IN 154273B
Authority
IN
India
Application number
IN858/CAL/81A
Other languages
English (en)
Inventor
Takashi Sakamoto
Jinkichi Suto
Hisahiro Moriuchi
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IN154273B publication Critical patent/IN154273B/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/123Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/04Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using capacitive elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Logic Circuits (AREA)
IN858/CAL/81A 1980-08-13 1981-07-30 IN154273B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11022580A JPS5736498A (en) 1980-08-13 1980-08-13 Multisplit longitudinal type rom

Publications (1)

Publication Number Publication Date
IN154273B true IN154273B (it) 1984-10-13

Family

ID=14530252

Family Applications (1)

Application Number Title Priority Date Filing Date
IN858/CAL/81A IN154273B (it) 1980-08-13 1981-07-30

Country Status (9)

Country Link
US (1) US4428067A (it)
JP (1) JPS5736498A (it)
KR (1) KR860001073B1 (it)
DE (1) DE3132082A1 (it)
GB (1) GB2082004B (it)
HK (1) HK89584A (it)
IN (1) IN154273B (it)
MY (1) MY8500848A (it)
SG (1) SG62584G (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4442508A (en) * 1981-08-05 1984-04-10 General Instrument Corporation Storage cells for use in two conductor data column storage logic arrays
JPS5982698A (ja) * 1982-11-04 1984-05-12 Toshiba Corp マスクrom
US4602354A (en) * 1983-01-10 1986-07-22 Ncr Corporation X-and-OR memory array
US4570239A (en) * 1983-01-24 1986-02-11 Motorola, Inc. Series read-only-memory having capacitive bootstrap precharging circuitry
US4633442A (en) * 1985-02-04 1986-12-30 Raytheon Company Protective circuitry for a read only memory
JPS62180597A (ja) * 1986-02-03 1987-08-07 Matsushita Electric Ind Co Ltd マイクロコンピユ−タのrom回路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3613055A (en) * 1969-12-23 1971-10-12 Andrew G Varadi Read-only memory utilizing service column switching techniques
JPS5713079B2 (it) * 1975-02-10 1982-03-15

Also Published As

Publication number Publication date
DE3132082A1 (de) 1982-04-29
SG62584G (en) 1985-03-15
GB2082004A (en) 1982-02-24
KR830006823A (ko) 1983-10-06
HK89584A (en) 1984-11-23
GB2082004B (en) 1984-04-26
KR860001073B1 (ko) 1986-08-04
JPS5736498A (en) 1982-02-27
DE3132082C2 (it) 1993-01-07
MY8500848A (en) 1985-12-31
JPS6235195B2 (it) 1987-07-31
US4428067A (en) 1984-01-24

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