IN147965B - - Google Patents

Info

Publication number
IN147965B
IN147965B IN1589/CAL/77A IN1589CA1977A IN147965B IN 147965 B IN147965 B IN 147965B IN 1589CA1977 A IN1589CA1977 A IN 1589CA1977A IN 147965 B IN147965 B IN 147965B
Authority
IN
India
Application number
IN1589/CAL/77A
Other languages
English (en)
Inventor
C F Wheatley
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IN147965B publication Critical patent/IN147965B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Thermistors And Varistors (AREA)
IN1589/CAL/77A 1976-12-27 1977-11-07 IN147965B (ru)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/754,683 US4091409A (en) 1976-12-27 1976-12-27 Semiconductor device having symmetrical current distribution

Publications (1)

Publication Number Publication Date
IN147965B true IN147965B (ru) 1980-08-23

Family

ID=25035860

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1589/CAL/77A IN147965B (ru) 1976-12-27 1977-11-07

Country Status (11)

Country Link
US (1) US4091409A (ru)
JP (1) JPS5383580A (ru)
BE (1) BE862301A (ru)
DE (1) DE2756514A1 (ru)
FR (1) FR2375724A1 (ru)
GB (1) GB1540559A (ru)
IN (1) IN147965B (ru)
IT (1) IT1087917B (ru)
PL (1) PL113788B1 (ru)
SE (1) SE437588B (ru)
YU (1) YU39405B (ru)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2702571C3 (de) * 1977-01-22 1982-02-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Kontaktstruktur für ein Vielfach- Halbleiterbauelement
US4194174A (en) * 1978-06-19 1980-03-18 Microwave Semiconductor Corp. Method for fabricating ballasted finger electrode
US4717946A (en) * 1983-04-20 1988-01-05 Applied Solar Energy Corporation Thin line junction photodiode
US5204735A (en) * 1988-04-21 1993-04-20 Kabushiki Kaisha Toshiba High-frequency semiconductor device having emitter stabilizing resistor and method of manufacturing the same
US5804867A (en) * 1996-10-02 1998-09-08 Ericsson Inc. Thermally balanced radio frequency power transistor
PL232498B1 (pl) 2016-06-10 2019-06-28 Wido Profil Spolka Z Ograniczona Odpowiedzialnoscia Bezkotwowy zespół do mocowania płytowych elementów okładzinowych i sposób jego mocowania

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor
US3430115A (en) * 1966-08-31 1969-02-25 Webb James E Apparatus for ballasting high frequency transistors
US3609460A (en) * 1968-06-28 1971-09-28 Rca Corp Power transistor having ballasted emitter fingers interdigitated with base fingers
US3619738A (en) * 1969-10-13 1971-11-09 Tokyo Shibaura Electric Co Semiconductor device with improved connection to control electrode region
US3756924A (en) * 1971-04-01 1973-09-04 Texas Instruments Inc Method of fabricating a semiconductor device
JPS5110699U (ru) * 1974-07-10 1976-01-26

Also Published As

Publication number Publication date
JPS5383580A (en) 1978-07-24
PL113788B1 (en) 1980-12-31
BE862301A (fr) 1978-04-14
GB1540559A (en) 1979-02-14
DE2756514C2 (ru) 1989-04-06
DE2756514A1 (de) 1978-06-29
YU286377A (en) 1982-02-28
PL203303A1 (pl) 1978-07-17
SE437588B (sv) 1985-03-04
SE7713580L (sv) 1978-06-28
FR2375724A1 (fr) 1978-07-21
IT1087917B (it) 1985-06-04
FR2375724B1 (ru) 1982-11-19
YU39405B (en) 1984-12-31
US4091409A (en) 1978-05-23

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