IN147957B - - Google Patents

Info

Publication number
IN147957B
IN147957B IN524/CAL/77A IN524CA1977A IN147957B IN 147957 B IN147957 B IN 147957B IN 524CA1977 A IN524CA1977 A IN 524CA1977A IN 147957 B IN147957 B IN 147957B
Authority
IN
India
Application number
IN524/CAL/77A
Other languages
English (en)
Inventor
Chang Kwei Chu
Patrick Elio Felice
J Bartko
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of IN147957B publication Critical patent/IN147957B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/87Thyristor diodes, e.g. Shockley diodes, break-over diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
IN524/CAL/77A 1976-05-17 1977-04-07 IN147957B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/686,857 US4076555A (en) 1976-05-17 1976-05-17 Irradiation for rapid turn-off reverse blocking diode thyristor

Publications (1)

Publication Number Publication Date
IN147957B true IN147957B (xx) 1980-08-23

Family

ID=24758035

Family Applications (1)

Application Number Title Priority Date Filing Date
IN524/CAL/77A IN147957B (xx) 1976-05-17 1977-04-07

Country Status (9)

Country Link
US (1) US4076555A (xx)
JP (1) JPS52140281A (xx)
BE (1) BE853879A (xx)
BR (1) BR7702974A (xx)
CA (1) CA1085964A (xx)
DE (1) DE2721913A1 (xx)
FR (1) FR2352401A1 (xx)
GB (1) GB1580397A (xx)
IN (1) IN147957B (xx)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5395581A (en) * 1977-02-02 1978-08-21 Hitachi Ltd Manufacture for semiconductor device
US4240844A (en) * 1978-12-22 1980-12-23 Westinghouse Electric Corp. Reducing the switching time of semiconductor devices by neutron irradiation
US4230791A (en) * 1979-04-02 1980-10-28 General Electric Company Control of valley current in a unijunction transistor by electron irradiation
US4311534A (en) * 1980-06-27 1982-01-19 Westinghouse Electric Corp. Reducing the reverse recovery charge of thyristors by nuclear irradiation
DE19511696A1 (de) * 1995-03-30 1996-10-02 Basf Ag Glanzpigmente auf Basis reduzierter titandioxidbeschichteter silikatischer Plättchen
US7868352B2 (en) * 2008-09-23 2011-01-11 Optiswitch Technology Corporation Silicon break over diode
CN102820333B (zh) * 2012-07-30 2015-05-13 浙江明德微电子股份有限公司 台面型反向阻断二极晶闸管芯片
CN114005743B (zh) * 2021-10-13 2022-08-30 华中科技大学 一种方片半导体脉冲功率开关及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3840887A (en) * 1972-08-25 1974-10-08 Westinghouse Electric Corp Selective irradiation of gated semiconductor devices to control gate sensitivity
US3881963A (en) * 1973-01-18 1975-05-06 Westinghouse Electric Corp Irradiation for fast switching thyristors
US3881964A (en) * 1973-03-05 1975-05-06 Westinghouse Electric Corp Annealing to control gate sensitivity of gated semiconductor devices
US3888701A (en) * 1973-03-09 1975-06-10 Westinghouse Electric Corp Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing
US3809582A (en) * 1973-03-08 1974-05-07 Westinghouse Electric Corp Irradiation for fast recovery of high power junction diodes
US3877997A (en) * 1973-03-20 1975-04-15 Westinghouse Electric Corp Selective irradiation for fast switching thyristor with low forward voltage drop
US4043836A (en) * 1976-05-03 1977-08-23 General Electric Company Method of manufacturing semiconductor devices

Also Published As

Publication number Publication date
JPS52140281A (en) 1977-11-22
BR7702974A (pt) 1978-04-04
BE853879A (fr) 1977-10-24
CA1085964A (en) 1980-09-16
US4076555A (en) 1978-02-28
GB1580397A (en) 1980-12-03
DE2721913A1 (de) 1977-12-01
FR2352401A1 (fr) 1977-12-16

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