BE853879A - Thyristor a diode de blocage inverse rapide et procede de fabrication - Google Patents
Thyristor a diode de blocage inverse rapide et procede de fabricationInfo
- Publication number
- BE853879A BE853879A BE176949A BE176949A BE853879A BE 853879 A BE853879 A BE 853879A BE 176949 A BE176949 A BE 176949A BE 176949 A BE176949 A BE 176949A BE 853879 A BE853879 A BE 853879A
- Authority
- BE
- Belgium
- Prior art keywords
- manufacturing process
- reverse blocking
- blocking diode
- quick reverse
- diode thyristor
- Prior art date
Links
- 230000000903 blocking effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/686,857 US4076555A (en) | 1976-05-17 | 1976-05-17 | Irradiation for rapid turn-off reverse blocking diode thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE853879A true BE853879A (fr) | 1977-10-24 |
Family
ID=24758035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE176949A BE853879A (fr) | 1976-05-17 | 1977-04-22 | Thyristor a diode de blocage inverse rapide et procede de fabrication |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4076555A (fr) |
| JP (1) | JPS52140281A (fr) |
| BE (1) | BE853879A (fr) |
| BR (1) | BR7702974A (fr) |
| CA (1) | CA1085964A (fr) |
| DE (1) | DE2721913A1 (fr) |
| FR (1) | FR2352401A1 (fr) |
| GB (1) | GB1580397A (fr) |
| IN (1) | IN147957B (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5395581A (en) * | 1977-02-02 | 1978-08-21 | Hitachi Ltd | Manufacture for semiconductor device |
| US4240844A (en) * | 1978-12-22 | 1980-12-23 | Westinghouse Electric Corp. | Reducing the switching time of semiconductor devices by neutron irradiation |
| US4230791A (en) * | 1979-04-02 | 1980-10-28 | General Electric Company | Control of valley current in a unijunction transistor by electron irradiation |
| US4311534A (en) * | 1980-06-27 | 1982-01-19 | Westinghouse Electric Corp. | Reducing the reverse recovery charge of thyristors by nuclear irradiation |
| DE19511696A1 (de) * | 1995-03-30 | 1996-10-02 | Basf Ag | Glanzpigmente auf Basis reduzierter titandioxidbeschichteter silikatischer Plättchen |
| US7868352B2 (en) * | 2008-09-23 | 2011-01-11 | Optiswitch Technology Corporation | Silicon break over diode |
| CN102820333B (zh) * | 2012-07-30 | 2015-05-13 | 浙江明德微电子股份有限公司 | 台面型反向阻断二极晶闸管芯片 |
| CN114005743B (zh) * | 2021-10-13 | 2022-08-30 | 华中科技大学 | 一种方片半导体脉冲功率开关及其制备方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3840887A (en) * | 1972-08-25 | 1974-10-08 | Westinghouse Electric Corp | Selective irradiation of gated semiconductor devices to control gate sensitivity |
| US3881963A (en) * | 1973-01-18 | 1975-05-06 | Westinghouse Electric Corp | Irradiation for fast switching thyristors |
| US3881964A (en) * | 1973-03-05 | 1975-05-06 | Westinghouse Electric Corp | Annealing to control gate sensitivity of gated semiconductor devices |
| US3809582A (en) * | 1973-03-08 | 1974-05-07 | Westinghouse Electric Corp | Irradiation for fast recovery of high power junction diodes |
| US3888701A (en) * | 1973-03-09 | 1975-06-10 | Westinghouse Electric Corp | Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing |
| US3877997A (en) * | 1973-03-20 | 1975-04-15 | Westinghouse Electric Corp | Selective irradiation for fast switching thyristor with low forward voltage drop |
| US4043836A (en) * | 1976-05-03 | 1977-08-23 | General Electric Company | Method of manufacturing semiconductor devices |
-
1976
- 1976-05-17 US US05/686,857 patent/US4076555A/en not_active Expired - Lifetime
-
1977
- 1977-04-07 IN IN524/CAL/77A patent/IN147957B/en unknown
- 1977-04-14 FR FR7711340A patent/FR2352401A1/fr active Pending
- 1977-04-20 CA CA276,547A patent/CA1085964A/fr not_active Expired
- 1977-04-22 BE BE176949A patent/BE853879A/fr unknown
- 1977-05-09 BR BR7702974A patent/BR7702974A/pt unknown
- 1977-05-10 GB GB19518/77A patent/GB1580397A/en not_active Expired
- 1977-05-14 DE DE19772721913 patent/DE2721913A1/de not_active Withdrawn
- 1977-05-17 JP JP5604177A patent/JPS52140281A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US4076555A (en) | 1978-02-28 |
| FR2352401A1 (fr) | 1977-12-16 |
| BR7702974A (pt) | 1978-04-04 |
| CA1085964A (fr) | 1980-09-16 |
| IN147957B (fr) | 1980-08-23 |
| DE2721913A1 (de) | 1977-12-01 |
| GB1580397A (en) | 1980-12-03 |
| JPS52140281A (en) | 1977-11-22 |
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