IN144812B - - Google Patents

Info

Publication number
IN144812B
IN144812B IN2259/CAL/1976A IN2259CA1976A IN144812B IN 144812 B IN144812 B IN 144812B IN 2259CA1976 A IN2259CA1976 A IN 2259CA1976A IN 144812 B IN144812 B IN 144812B
Authority
IN
India
Application number
IN2259/CAL/1976A
Other languages
English (en)
Inventor
J Motto Jr
Chang Kwei Chu
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of IN144812B publication Critical patent/IN144812B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/87Thyristor diodes, e.g. Shockley diodes, break-over diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
IN2259/CAL/1976A 1976-01-22 1976-12-24 IN144812B (ru)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65130376A 1976-01-22 1976-01-22

Publications (1)

Publication Number Publication Date
IN144812B true IN144812B (ru) 1978-07-15

Family

ID=24612347

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2259/CAL/1976A IN144812B (ru) 1976-01-22 1976-12-24

Country Status (6)

Country Link
BE (1) BE850349A (ru)
CA (1) CA1070434A (ru)
DE (1) DE2701991A1 (ru)
FR (1) FR2339256A1 (ru)
GB (1) GB1568526A (ru)
IN (1) IN144812B (ru)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE8306663L (sv) * 1982-12-08 1984-06-09 Int Rectifier Corp Forfarande for framstellning av halvledaranordning

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1639459A1 (de) * 1968-03-16 1971-04-01 Tokyo Shibaura Electric Co Halbleitergesteuerte Gleichrichtervorrichtung mit verbesserten Einschalteigenschaften;ein Verfahren zur Herstellung einer derartigen Gleichrichtervorrichtung
US3688164A (en) * 1969-10-01 1972-08-29 Hitachi Ltd Multi-layer-type switch device
SE378479B (ru) * 1973-12-05 1975-09-01 Asea Ab
US4080620A (en) * 1975-11-17 1978-03-21 Westinghouse Electric Corporation Reverse switching rectifier and method for making same

Also Published As

Publication number Publication date
GB1568526A (en) 1980-05-29
CA1070434A (en) 1980-01-22
FR2339256A1 (fr) 1977-08-19
BE850349A (fr) 1977-07-13
DE2701991A1 (de) 1977-07-28

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