IL91032A0 - Method for deposition of a reactive metal to a substrate - Google Patents

Method for deposition of a reactive metal to a substrate

Info

Publication number
IL91032A0
IL91032A0 IL91032A IL9103289A IL91032A0 IL 91032 A0 IL91032 A0 IL 91032A0 IL 91032 A IL91032 A IL 91032A IL 9103289 A IL9103289 A IL 9103289A IL 91032 A0 IL91032 A0 IL 91032A0
Authority
IL
Israel
Prior art keywords
deposition
substrate
reactive metal
reactive
metal
Prior art date
Application number
IL91032A
Other languages
English (en)
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of IL91032A0 publication Critical patent/IL91032A0/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/28—Deposition of only one other non-metal element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/11—Metal-organic CVD, ruehrwein type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Surface Treatment Of Glass (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IL91032A 1988-07-25 1989-07-19 Method for deposition of a reactive metal to a substrate IL91032A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/224,089 US4904616A (en) 1988-07-25 1988-07-25 Method of depositing arsine, antimony and phosphine substitutes

Publications (1)

Publication Number Publication Date
IL91032A0 true IL91032A0 (en) 1990-02-09

Family

ID=22839239

Family Applications (1)

Application Number Title Priority Date Filing Date
IL91032A IL91032A0 (en) 1988-07-25 1989-07-19 Method for deposition of a reactive metal to a substrate

Country Status (6)

Country Link
US (1) US4904616A (de)
EP (1) EP0352607A3 (de)
JP (1) JPH0280572A (de)
KR (1) KR920002010B1 (de)
DK (1) DK364289A (de)
IL (1) IL91032A0 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3631469A1 (de) * 1986-09-16 1988-03-17 Merck Patent Gmbh Metallorganische verbindungen
US5141569A (en) * 1988-12-22 1992-08-25 Ford Microelectronics Growth of P type Group III-V compound semiconductor on Group IV semiconductor substrate
DE69023956T2 (de) * 1989-06-16 1996-04-25 Toshiba Kawasaki Kk Verfahren zur Herstellung eines III-V-Verbindungshalbleiterbauelementes.
US5106766A (en) * 1989-07-11 1992-04-21 At&T Bell Laboratories Method of making a semiconductor device that comprises p-type III-V semiconductor material
US4999223A (en) * 1990-02-22 1991-03-12 Cvd Incorporated Chemical vapor deposition and chemicals with diarsines and polyarsines
US5124278A (en) * 1990-09-21 1992-06-23 Air Products And Chemicals, Inc. Amino replacements for arsine, antimony and phosphine
US5202283A (en) * 1991-02-19 1993-04-13 Rockwell International Corporation Technique for doping MOCVD grown crystalline materials using free radical transport of the dopant species
US5153147A (en) * 1991-02-27 1992-10-06 At&T Bell Laboratories Selective growth of inp in device fabrication
US5073507A (en) * 1991-03-04 1991-12-17 Motorola, Inc. Producing a plasma containing beryllium and beryllium fluoride
US5242859A (en) * 1992-07-14 1993-09-07 International Business Machines Corporation Highly doped semiconductor material and method of fabrication thereof
US5326425A (en) * 1993-01-28 1994-07-05 The United States Of America As Represented By The Secretary Of The Navy Preparation of tertiarybutyldimethylantimony and use thereof
US5382542A (en) * 1993-07-26 1995-01-17 Hughes Aircraft Company Method of growth of II-VI materials on silicon using As passivation
JP3230029B2 (ja) * 1994-05-30 2001-11-19 富士通株式会社 Ｉｉｉ−ｖ族化合物半導体結晶成長方法
US5599735A (en) * 1994-08-01 1997-02-04 Texas Instruments Incorporated Method for doped shallow junction formation using direct gas-phase doping
US5489550A (en) * 1994-08-09 1996-02-06 Texas Instruments Incorporated Gas-phase doping method using germanium-containing additive
JP2842292B2 (ja) * 1994-09-16 1998-12-24 日本電気株式会社 半導体光集積装置および製造方法
US5641707A (en) * 1994-10-31 1997-06-24 Texas Instruments Incorporated Direct gas-phase doping of semiconductor wafers using an organic dopant source of phosphorus
US5972743A (en) * 1996-12-03 1999-10-26 Advanced Technology Materials, Inc. Precursor compositions for ion implantation of antimony and ion implantation process utilizing same
GB9726191D0 (en) * 1997-12-11 1998-02-11 Philips Electronics Nv Ion implantation process
US20070217457A1 (en) * 2003-11-25 2007-09-20 Wolfgang Stolz Optically Pumped Semiconductor Devices for the Generation of Radiation, Their Production as Well as Methods for the Strain Compensation in the Layer Successions used Within
US7667063B2 (en) * 2005-03-23 2010-02-23 Nichia Corporation Method for producing trialkyl gallium
US7285673B2 (en) * 2005-06-27 2007-10-23 E.I. Du Pont De Nemours And Company Process for fluoro derivative-substituted aryl pnictogens and their oxides
JP5649157B2 (ja) * 2009-08-01 2015-01-07 住友電気工業株式会社 半導体素子およびその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL158460B (nl) * 1950-01-31 George Frederick Smith Vorkhefvoertuig met kantelbaar laadvlak.
US2842466A (en) * 1954-06-15 1958-07-08 Gen Electric Method of making p-nu junction semiconductor unit
US2787564A (en) * 1954-10-28 1957-04-02 Bell Telephone Labor Inc Forming semiconductive devices by ionic bombardment
GB928207A (en) * 1960-01-26 1963-06-12 Ici Ltd New halogen-containing trisubstituted phosphines
JPS5412792A (en) * 1977-06-29 1979-01-30 Yanagimoto Seisakusho Co Ltd Method and apparatus for so2 concentration measurement using fluorescent analysis
US4147571A (en) * 1977-07-11 1979-04-03 Hewlett-Packard Company Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system
US4734514A (en) * 1984-10-25 1988-03-29 Morton Thiokol, Inc. Hydrocarbon-substituted analogs of phosphine and arsine, particularly for metal organic chemical vapor deposition
GB8515814D0 (en) * 1985-06-21 1985-07-24 British Telecomm Fabrication of optical waveguides
US4800173A (en) * 1986-02-20 1989-01-24 Canon Kabushiki Kaisha Process for preparing Si or Ge epitaxial film using fluorine oxidant
US4721683A (en) * 1987-05-21 1988-01-26 American Cyanamid Company Use of alkylphosphines and alkylarsines in ion implantation

Also Published As

Publication number Publication date
KR920002010B1 (ko) 1992-03-09
EP0352607A2 (de) 1990-01-31
DK364289A (da) 1990-01-26
KR900001874A (ko) 1990-02-27
DK364289D0 (da) 1989-07-24
JPH0280572A (ja) 1990-03-20
EP0352607A3 (de) 1990-11-14
US4904616A (en) 1990-02-27

Similar Documents

Publication Publication Date Title
IL91032A0 (en) Method for deposition of a reactive metal to a substrate
EP0201806A3 (en) Process for preparing a substrate for subsequent electroless deposition of a metal
DE3563635D1 (en) A method of depositing a copper pattern on a substrate
GB2176808B (en) A method of coating substrates in a vacuum chamber
EP0175253A3 (en) Method of partially metallizing a substrate surface
DE3567824D1 (en) Process of coating alloy substrates
DE3572200D1 (en) A method of homogeneous chemical vapour deposition
GB2219537B (en) Process for making a metal member having a surface layer
EP0243723A3 (en) A method for bonding a layer containing a refractory metal to a substrate
GB2141443B (en) Arc deposition of metal onto a substrate
GB9116381D0 (en) Method for deposition of a metal
AU5897286A (en) Coating composition and process for protecting a surface from corrosion
EP0206145A3 (en) A method of metallising an organic substrate so as to achieve improved adhesion of the metal
EP0166991A3 (en) Method of controlling deposition amount distribution in a vacuum deposition plating
DE3365017D1 (en) Method of applying a metallic coating to a substrate
EP0166960A3 (en) Method of rapidly changing deposition amount in a continuous vacuum deposition process
EP0327153A3 (en) Process for applying phosphate coatings to metals
EP0486201A3 (en) Method for production of a dielectric-separation substrate
DE3564824D1 (en) A combined continuous plating apparatus for hot-dip plating and vacuum deposition plating
EP0180091A3 (en) Method of selectively depositing metal layers on a substrate
GB2180262B (en) Methods of forming substances on substrates by reactive sputtering
DE3564363D1 (en) Process for activating a substrate for electroless deposition of a conductive metal
GB8808323D0 (en) Improvements in/relating to coating of metal substrates
ZA869550B (en) Process for imparting a surface coating to films
GB2152841B (en) Method for producing a decorative finish on a substrate of heterogeneous composition