IL83948A0 - Process for depositing layers of diamond - Google Patents

Process for depositing layers of diamond

Info

Publication number
IL83948A0
IL83948A0 IL83948A IL8394887A IL83948A0 IL 83948 A0 IL83948 A0 IL 83948A0 IL 83948 A IL83948 A IL 83948A IL 8394887 A IL8394887 A IL 8394887A IL 83948 A0 IL83948 A0 IL 83948A0
Authority
IL
Israel
Prior art keywords
diamond
depositing layers
depositing
layers
Prior art date
Application number
IL83948A
Other versions
IL83948A (en
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of IL83948A0 publication Critical patent/IL83948A0/en
Publication of IL83948A publication Critical patent/IL83948A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • C23C16/278Diamond only doping or introduction of a secondary phase in the diamond
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • C23C16/272Diamond only using DC, AC or RF discharges
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond
IL83948A 1986-10-15 1987-09-18 Process for depositing layers of diamond IL83948A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US91910286A 1986-10-15 1986-10-15

Publications (2)

Publication Number Publication Date
IL83948A0 true IL83948A0 (en) 1988-02-29
IL83948A IL83948A (en) 1991-07-18

Family

ID=25441512

Family Applications (1)

Application Number Title Priority Date Filing Date
IL83948A IL83948A (en) 1986-10-15 1987-09-18 Process for depositing layers of diamond

Country Status (4)

Country Link
EP (1) EP0288526A1 (en)
JP (1) JPH01501142A (en)
IL (1) IL83948A (en)
WO (1) WO1988002792A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8810113D0 (en) * 1988-04-28 1988-06-02 Jones B L Bonded composite
JPH04214094A (en) * 1990-04-26 1992-08-05 Hitachi Ltd Manufacture of synthetic diamond thin film, the above thin film and apparatus using same
US5455072A (en) * 1992-11-18 1995-10-03 Bension; Rouvain M. Initiation and bonding of diamond and other thin films
US7402835B2 (en) * 2002-07-18 2008-07-22 Chevron U.S.A. Inc. Heteroatom-containing diamondoid transistors
US9783885B2 (en) * 2010-08-11 2017-10-10 Unit Cell Diamond Llc Methods for producing diamond mass and apparatus therefor
US10258959B2 (en) 2010-08-11 2019-04-16 Unit Cell Diamond Llc Methods of producing heterodiamond and apparatus therefor
CN106573212B (en) * 2014-05-28 2020-10-27 晶胞金刚石有限责任公司 Combined synthesis of diamond unit cells and diamond masses

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3362788A (en) * 1963-08-26 1968-01-09 Sun Oil Co Preparation of crystalline carbonaceous materials
GB2099806B (en) * 1981-05-20 1985-04-03 Secr Defence Diamond like material
JPS58135117A (en) * 1982-01-29 1983-08-11 Natl Inst For Res In Inorg Mater Preparation of diamond
JPS60127293A (en) * 1983-12-15 1985-07-06 Asahi Chem Ind Co Ltd Production of diamond
JPS60221395A (en) * 1984-04-19 1985-11-06 Yoshio Imai Manufacture of diamond thin film and its use
JPS62103367A (en) * 1985-10-28 1987-05-13 Nippon Telegr & Teleph Corp <Ntt> Synthesizing method for carbon film

Also Published As

Publication number Publication date
IL83948A (en) 1991-07-18
JPH01501142A (en) 1989-04-20
WO1988002792A1 (en) 1988-04-21
EP0288526A1 (en) 1988-11-02

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Legal Events

Date Code Title Description
KB Patent renewed
MM9K Patent not in force due to non-payment of renewal fees