IL83948A0 - Process for depositing layers of diamond - Google Patents
Process for depositing layers of diamondInfo
- Publication number
- IL83948A0 IL83948A0 IL83948A IL8394887A IL83948A0 IL 83948 A0 IL83948 A0 IL 83948A0 IL 83948 A IL83948 A IL 83948A IL 8394887 A IL8394887 A IL 8394887A IL 83948 A0 IL83948 A0 IL 83948A0
- Authority
- IL
- Israel
- Prior art keywords
- diamond
- depositing layers
- depositing
- layers
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/272—Diamond only using DC, AC or RF discharges
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US91910286A | 1986-10-15 | 1986-10-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
IL83948A0 true IL83948A0 (en) | 1988-02-29 |
IL83948A IL83948A (en) | 1991-07-18 |
Family
ID=25441512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL83948A IL83948A (en) | 1986-10-15 | 1987-09-18 | Process for depositing layers of diamond |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0288526A1 (en) |
JP (1) | JPH01501142A (en) |
IL (1) | IL83948A (en) |
WO (1) | WO1988002792A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8810113D0 (en) * | 1988-04-28 | 1988-06-02 | Jones B L | Bonded composite |
JPH04214094A (en) * | 1990-04-26 | 1992-08-05 | Hitachi Ltd | Manufacture of synthetic diamond thin film, the above thin film and apparatus using same |
US5455072A (en) * | 1992-11-18 | 1995-10-03 | Bension; Rouvain M. | Initiation and bonding of diamond and other thin films |
US7402835B2 (en) * | 2002-07-18 | 2008-07-22 | Chevron U.S.A. Inc. | Heteroatom-containing diamondoid transistors |
US9783885B2 (en) * | 2010-08-11 | 2017-10-10 | Unit Cell Diamond Llc | Methods for producing diamond mass and apparatus therefor |
US10258959B2 (en) | 2010-08-11 | 2019-04-16 | Unit Cell Diamond Llc | Methods of producing heterodiamond and apparatus therefor |
CN106573212B (en) * | 2014-05-28 | 2020-10-27 | 晶胞金刚石有限责任公司 | Combined synthesis of diamond unit cells and diamond masses |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3362788A (en) * | 1963-08-26 | 1968-01-09 | Sun Oil Co | Preparation of crystalline carbonaceous materials |
GB2099806B (en) * | 1981-05-20 | 1985-04-03 | Secr Defence | Diamond like material |
JPS58135117A (en) * | 1982-01-29 | 1983-08-11 | Natl Inst For Res In Inorg Mater | Preparation of diamond |
JPS60127293A (en) * | 1983-12-15 | 1985-07-06 | Asahi Chem Ind Co Ltd | Production of diamond |
JPS60221395A (en) * | 1984-04-19 | 1985-11-06 | Yoshio Imai | Manufacture of diamond thin film and its use |
JPS62103367A (en) * | 1985-10-28 | 1987-05-13 | Nippon Telegr & Teleph Corp <Ntt> | Synthesizing method for carbon film |
-
1987
- 1987-09-08 EP EP87907264A patent/EP0288526A1/en not_active Withdrawn
- 1987-09-08 WO PCT/US1987/002251 patent/WO1988002792A1/en not_active Application Discontinuation
- 1987-09-08 JP JP62506860A patent/JPH01501142A/en active Pending
- 1987-09-18 IL IL83948A patent/IL83948A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
IL83948A (en) | 1991-07-18 |
JPH01501142A (en) | 1989-04-20 |
WO1988002792A1 (en) | 1988-04-21 |
EP0288526A1 (en) | 1988-11-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
KB | Patent renewed | ||
MM9K | Patent not in force due to non-payment of renewal fees |