IL79612A0 - Method and apparatus for the chemical vapor deposition of iii-v semiconductors utilizing organometallic and elemental pnictide sources - Google Patents

Method and apparatus for the chemical vapor deposition of iii-v semiconductors utilizing organometallic and elemental pnictide sources

Info

Publication number
IL79612A0
IL79612A0 IL79612A IL7961286A IL79612A0 IL 79612 A0 IL79612 A0 IL 79612A0 IL 79612 A IL79612 A IL 79612A IL 7961286 A IL7961286 A IL 7961286A IL 79612 A0 IL79612 A0 IL 79612A0
Authority
IL
Israel
Prior art keywords
sources
iii
vapor deposition
chemical vapor
pnictide
Prior art date
Application number
IL79612A
Other languages
English (en)
Original Assignee
American Cyanamid Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Cyanamid Co filed Critical American Cyanamid Co
Publication of IL79612A0 publication Critical patent/IL79612A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Led Devices (AREA)
IL79612A 1985-08-09 1986-08-04 Method and apparatus for the chemical vapor deposition of iii-v semiconductors utilizing organometallic and elemental pnictide sources IL79612A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76429985A 1985-08-09 1985-08-09

Publications (1)

Publication Number Publication Date
IL79612A0 true IL79612A0 (en) 1986-11-30

Family

ID=25070303

Family Applications (1)

Application Number Title Priority Date Filing Date
IL79612A IL79612A0 (en) 1985-08-09 1986-08-04 Method and apparatus for the chemical vapor deposition of iii-v semiconductors utilizing organometallic and elemental pnictide sources

Country Status (7)

Country Link
EP (1) EP0212910A3 (de)
JP (1) JPS63500757A (de)
KR (1) KR880700450A (de)
AU (1) AU6284186A (de)
IL (1) IL79612A0 (de)
WO (1) WO1987000965A1 (de)
ZA (1) ZA865972B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EG18056A (en) * 1986-02-18 1991-11-30 Solarex Corp Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices
US6541695B1 (en) * 1992-09-21 2003-04-01 Thomas Mowles High efficiency solar photovoltaic cells produced with inexpensive materials by processes suitable for large volume production
GB2298087B (en) * 1992-11-20 1997-01-15 Mitsubishi Electric Corp Apparatus for producing compound semiconductor devices
US6150677A (en) * 1998-02-19 2000-11-21 Sumitomo Electric Industries, Ltd. Method of crystal growth of compound semiconductor, compound semiconductor device and method of manufacturing the device
US20080018004A1 (en) * 2006-06-09 2008-01-24 Air Products And Chemicals, Inc. High Flow GaCl3 Delivery

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4368098A (en) * 1969-10-01 1983-01-11 Rockwell International Corporation Epitaxial composite and method of making
FR2075325A5 (de) * 1970-01-09 1971-10-08 Hitachi Ltd
JPS4942351B1 (de) * 1970-08-12 1974-11-14
FR2419585A1 (fr) * 1978-03-07 1979-10-05 Thomson Csf Procede d'obtention en phase gazeuse d'une couche epitaxiale de phosphure d'indium, et appareil d'application de ce procede
DE3172368D1 (en) * 1980-11-18 1985-10-24 British Telecomm Improvements in the manufacture of group iiib-vb compounds
US4508931A (en) * 1981-12-30 1985-04-02 Stauffer Chemical Company Catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them
US4567503A (en) * 1983-06-29 1986-01-28 Stauffer Chemical Company MIS Device employing elemental pnictide or polyphosphide insulating layers
JPS6081092A (ja) * 1983-10-07 1985-05-09 Furukawa Electric Co Ltd:The 化合物半導体薄膜気相成長方法
US8602776B2 (en) * 2009-11-05 2013-12-10 Wilkie J. Stadeker Devices and methods for improved interdental cleaning and therapy

Also Published As

Publication number Publication date
EP0212910A3 (de) 1988-11-30
KR880700450A (ko) 1988-03-15
AU6284186A (en) 1987-03-05
ZA865972B (en) 1987-06-24
WO1987000965A1 (en) 1987-02-12
EP0212910A2 (de) 1987-03-04
JPS63500757A (ja) 1988-03-17

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IL79612A0 (en) Method and apparatus for the chemical vapor deposition of iii-v semiconductors utilizing organometallic and elemental pnictide sources