IL77325A - Method for polishing detector material - Google Patents

Method for polishing detector material

Info

Publication number
IL77325A
IL77325A IL77325A IL7732585A IL77325A IL 77325 A IL77325 A IL 77325A IL 77325 A IL77325 A IL 77325A IL 7732585 A IL7732585 A IL 7732585A IL 77325 A IL77325 A IL 77325A
Authority
IL
Israel
Prior art keywords
detector material
polishing
polishing detector
detector
Prior art date
Application number
IL77325A
Other languages
English (en)
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of IL77325A publication Critical patent/IL77325A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H10D62/862Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO being Group II-VI materials comprising three or more elements, e.g. CdZnTe
IL77325A 1984-12-21 1985-12-13 Method for polishing detector material IL77325A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/684,894 US4600469A (en) 1984-12-21 1984-12-21 Method for polishing detector material

Publications (1)

Publication Number Publication Date
IL77325A true IL77325A (en) 1988-06-30

Family

ID=24750001

Family Applications (1)

Application Number Title Priority Date Filing Date
IL77325A IL77325A (en) 1984-12-21 1985-12-13 Method for polishing detector material

Country Status (4)

Country Link
US (1) US4600469A (de)
EP (1) EP0188756A3 (de)
JP (1) JPS61182764A (de)
IL (1) IL77325A (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283857A (ja) * 1987-05-15 1988-11-21 Asahi Chem Ind Co Ltd 研磨布
US4869779A (en) * 1987-07-27 1989-09-26 Acheson Robert E Hydroplane polishing device and method
US4826563A (en) * 1988-04-14 1989-05-02 Honeywell Inc. Chemical polishing process and apparatus
US4879258A (en) * 1988-08-31 1989-11-07 Texas Instruments Incorporated Integrated circuit planarization by mechanical polishing
US5104828A (en) * 1990-03-01 1992-04-14 Intel Corporation Method of planarizing a dielectric formed over a semiconductor substrate
US5643053A (en) * 1993-12-27 1997-07-01 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved polishing control
US5562530A (en) * 1994-08-02 1996-10-08 Sematech, Inc. Pulsed-force chemical mechanical polishing
US5783497A (en) * 1994-08-02 1998-07-21 Sematech, Inc. Forced-flow wafer polisher
FR2723704B1 (fr) * 1994-08-17 1996-09-20 Commissariat Energie Atomique Dispositif de polissage avec porte-echantillons
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US6024630A (en) 1995-06-09 2000-02-15 Applied Materials, Inc. Fluid-pressure regulated wafer polishing head
US5681215A (en) * 1995-10-27 1997-10-28 Applied Materials, Inc. Carrier head design for a chemical mechanical polishing apparatus
US5762544A (en) * 1995-10-27 1998-06-09 Applied Materials, Inc. Carrier head design for a chemical mechanical polishing apparatus
US5709593A (en) * 1995-10-27 1998-01-20 Applied Materials, Inc. Apparatus and method for distribution of slurry in a chemical mechanical polishing system
US5840629A (en) * 1995-12-14 1998-11-24 Sematech, Inc. Copper chemical mechanical polishing slurry utilizing a chromate oxidant
US6022807A (en) * 1996-04-24 2000-02-08 Micro Processing Technology, Inc. Method for fabricating an integrated circuit
US5866031A (en) * 1996-06-19 1999-02-02 Sematech, Inc. Slurry formulation for chemical mechanical polishing of metals
US5846398A (en) * 1996-08-23 1998-12-08 Sematech, Inc. CMP slurry measurement and control technique
JPH10329015A (ja) * 1997-03-24 1998-12-15 Canon Inc 研磨装置および研磨方法
US5843269A (en) * 1997-04-18 1998-12-01 Ic Mic-Process, Inc. Slurry dispensing system for chemical-mechanical polishing apparatus
US5913713A (en) * 1997-07-31 1999-06-22 International Business Machines Corporation CMP polishing pad backside modifications for advantageous polishing results
US6143663A (en) * 1998-01-22 2000-11-07 Cypress Semiconductor Corporation Employing deionized water and an abrasive surface to polish a semiconductor topography
US6200896B1 (en) 1998-01-22 2001-03-13 Cypress Semiconductor Corporation Employing an acidic liquid and an abrasive surface to polish a semiconductor topography
US6171180B1 (en) 1998-03-31 2001-01-09 Cypress Semiconductor Corporation Planarizing a trench dielectric having an upper surface within a trench spaced below an adjacent polish stop surface
US6534378B1 (en) 1998-08-31 2003-03-18 Cypress Semiconductor Corp. Method for forming an integrated circuit device
US6232231B1 (en) 1998-08-31 2001-05-15 Cypress Semiconductor Corporation Planarized semiconductor interconnect topography and method for polishing a metal layer to form interconnect
US5972124A (en) 1998-08-31 1999-10-26 Advanced Micro Devices, Inc. Method for cleaning a surface of a dielectric material
US6566249B1 (en) 1998-11-09 2003-05-20 Cypress Semiconductor Corp. Planarized semiconductor interconnect topography and method for polishing a metal layer to form wide interconnect structures
US7481695B2 (en) 2000-08-22 2009-01-27 Lam Research Corporation Polishing apparatus and methods having high processing workload for controlling polishing pressure applied by polishing head
US6585572B1 (en) 2000-08-22 2003-07-01 Lam Research Corporation Subaperture chemical mechanical polishing system
US6652357B1 (en) 2000-09-22 2003-11-25 Lam Research Corporation Methods for controlling retaining ring and wafer head tilt for chemical mechanical polishing
US6640155B2 (en) 2000-08-22 2003-10-28 Lam Research Corporation Chemical mechanical polishing apparatus and methods with central control of polishing pressure applied by polishing head
US6471566B1 (en) 2000-09-18 2002-10-29 Lam Research Corporation Sacrificial retaining ring CMP system and methods for implementing the same
US6443815B1 (en) 2000-09-22 2002-09-03 Lam Research Corporation Apparatus and methods for controlling pad conditioning head tilt for chemical mechanical polishing
EP1211024A3 (de) * 2000-11-30 2004-01-02 JSR Corporation Polierverfahren
US6969684B1 (en) 2001-04-30 2005-11-29 Cypress Semiconductor Corp. Method of making a planarized semiconductor structure
US6736720B2 (en) * 2001-12-26 2004-05-18 Lam Research Corporation Apparatus and methods for controlling wafer temperature in chemical mechanical polishing
US6592437B1 (en) 2001-12-26 2003-07-15 Lam Research Corporation Active gimbal ring with internal gel and methods for making same
US6937915B1 (en) * 2002-03-28 2005-08-30 Lam Research Corporation Apparatus and methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control
US6828678B1 (en) 2002-03-29 2004-12-07 Silicon Magnetic Systems Semiconductor topography with a fill material arranged within a plurality of valleys associated with the surface roughness of the metal layer
US6955588B1 (en) 2004-03-31 2005-10-18 Lam Research Corporation Method of and platen for controlling removal rate characteristics in chemical mechanical planarization
FR2977372B1 (fr) * 2011-06-30 2015-12-18 Soc Fr Detecteurs Infrarouges Sofradir Procede pour la realisation d'un detecteur de rayonnement electro-magnetique et detecteur obtenu par ce procede
CN102303268A (zh) * 2011-09-21 2012-01-04 大连理工大学 一种软脆薄膜超光滑无损伤纳米磨削加工方法
US11077536B2 (en) 2016-06-24 2021-08-03 Applied Materials, Inc. Slurry distribution device for chemical mechanical polishing
US11897087B2 (en) * 2021-03-11 2024-02-13 Board Of Trustees Of Michigan State University Polishing apparatus for smoothing diamonds

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3262825A (en) * 1961-12-29 1966-07-26 Bell Telephone Labor Inc Method for etching crystals of group iii(a)-v(a) compounds and etchant used therefor
US4190813A (en) * 1977-12-28 1980-02-26 Bell Telephone Laboratories, Incorporated Strip buried heterostructure laser
US4184908A (en) * 1978-10-05 1980-01-22 The United States Of America As Represented By The Secretary Of The Navy Method for polishing cadmium sulfide semiconductors
US4323422A (en) * 1980-04-24 1982-04-06 Calawa Arthur R Method for preparing optically flat damage-free surfaces
US4436580A (en) * 1983-08-12 1984-03-13 The United States Of America As Represented By The Secretary Of The Army Method of preparing a mercury cadium telluride substrate for passivation and processing
US4475981A (en) * 1983-10-28 1984-10-09 Ampex Corporation Metal polishing composition and process

Also Published As

Publication number Publication date
US4600469A (en) 1986-07-15
JPS61182764A (ja) 1986-08-15
EP0188756A2 (de) 1986-07-30
EP0188756A3 (de) 1988-08-31

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