IL54018A - Metal oxide/indium phosphide semiconductor devices - Google Patents
Metal oxide/indium phosphide semiconductor devicesInfo
- Publication number
- IL54018A IL54018A IL54018A IL5401878A IL54018A IL 54018 A IL54018 A IL 54018A IL 54018 A IL54018 A IL 54018A IL 5401878 A IL5401878 A IL 5401878A IL 54018 A IL54018 A IL 54018A
- Authority
- IL
- Israel
- Prior art keywords
- metal oxide
- semiconductor devices
- indium phosphide
- phosphide semiconductor
- indium
- Prior art date
Links
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 title 1
- 229910044991 metal oxide Inorganic materials 0.000 title 1
- 150000004706 metal oxides Chemical class 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/118—Oxide films
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/12—Photocathodes-Cs coated and solar cell
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Photovoltaic Devices (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/769,107 US4121238A (en) | 1977-02-16 | 1977-02-16 | Metal oxide/indium phosphide devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL54018A0 IL54018A0 (en) | 1978-04-30 |
| IL54018A true IL54018A (en) | 1980-06-30 |
Family
ID=25084478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL54018A IL54018A (en) | 1977-02-16 | 1978-02-10 | Metal oxide/indium phosphide semiconductor devices |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US4121238A (es) |
| JP (1) | JPS53102688A (es) |
| BE (1) | BE863929A (es) |
| CA (1) | CA1090456A (es) |
| DE (1) | DE2805582A1 (es) |
| ES (1) | ES467047A1 (es) |
| FR (1) | FR2381393A1 (es) |
| GB (1) | GB1547140A (es) |
| IL (1) | IL54018A (es) |
| IT (1) | IT7867314A0 (es) |
| NL (1) | NL7801559A (es) |
| SE (1) | SE433788B (es) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2376513A1 (fr) * | 1976-12-31 | 1978-07-28 | Radiotechnique Compelec | Dispositif semiconducteur muni d'un film protecteur |
| US4166880A (en) * | 1978-01-18 | 1979-09-04 | Solamat Incorporated | Solar energy device |
| JPS55108781A (en) * | 1979-02-15 | 1980-08-21 | Fuji Xerox Co Ltd | Light receiving element |
| US4291323A (en) * | 1980-05-01 | 1981-09-22 | Bell Telephone Laboratories, Incorporated | Indium phosphide arsenide based devices |
| JPS6022381A (ja) * | 1983-07-18 | 1985-02-04 | Nippon Telegr & Teleph Corp <Ntt> | 太陽電池 |
| US4843450A (en) * | 1986-06-16 | 1989-06-27 | International Business Machines Corporation | Compound semiconductor interface control |
| US5021365A (en) * | 1986-06-16 | 1991-06-04 | International Business Machines Corporation | Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning |
| IL84118A (en) * | 1987-10-07 | 1991-03-10 | Semiconductor Devices Tadiran | Process for ii-vi compound epitaxy |
| US5105291A (en) * | 1989-11-20 | 1992-04-14 | Ricoh Company, Ltd. | Liquid crystal display cell with electrodes of substantially amorphous metal oxide having low resistivity |
| JP2912506B2 (ja) * | 1992-10-21 | 1999-06-28 | シャープ株式会社 | 透明導電膜の形成方法 |
| US6344608B2 (en) * | 1998-06-30 | 2002-02-05 | Canon Kabushiki Kaisha | Photovoltaic element |
| SE0400582D0 (sv) * | 2004-03-05 | 2004-03-05 | Forskarpatent I Uppsala Ab | Method for in-line process control of the CIGS process |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3539883A (en) * | 1967-03-15 | 1970-11-10 | Ion Physics Corp | Antireflection coatings for semiconductor devices |
| US3560812A (en) * | 1968-07-05 | 1971-02-02 | Gen Electric | High selectively electromagnetic radiation detecting devices |
| US3614549A (en) * | 1968-10-15 | 1971-10-19 | Ibm | A semiconductor recombination radiation device |
| US4024558A (en) * | 1974-03-27 | 1977-05-17 | Innotech Corporation | Photovoltaic heterojunction device employing a glassy amorphous material as an active layer |
| US4016586A (en) * | 1974-03-27 | 1977-04-05 | Innotech Corporation | Photovoltaic heterojunction device employing a wide bandgap material as an active layer |
| IL46896A (en) * | 1974-03-27 | 1977-07-31 | Innotech Corp | Semiconductive device |
| US3978510A (en) * | 1974-07-29 | 1976-08-31 | Bell Telephone Laboratories, Incorporated | Heterojunction photovoltaic devices employing i-iii-vi compounds |
-
1977
- 1977-02-16 US US05/769,107 patent/US4121238A/en not_active Expired - Lifetime
- 1977-12-29 CA CA294,119A patent/CA1090456A/en not_active Expired
-
1978
- 1978-02-07 SE SE7801408A patent/SE433788B/sv unknown
- 1978-02-10 DE DE19782805582 patent/DE2805582A1/de not_active Ceased
- 1978-02-10 NL NL7801559A patent/NL7801559A/xx not_active Application Discontinuation
- 1978-02-10 IL IL54018A patent/IL54018A/xx unknown
- 1978-02-14 BE BE185140A patent/BE863929A/xx not_active IP Right Cessation
- 1978-02-15 IT IT7867314A patent/IT7867314A0/it unknown
- 1978-02-15 FR FR7804287A patent/FR2381393A1/fr active Granted
- 1978-02-16 ES ES467047A patent/ES467047A1/es not_active Expired
- 1978-02-16 JP JP1600978A patent/JPS53102688A/ja active Pending
- 1978-02-16 GB GB6147/78A patent/GB1547140A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4121238A (en) | 1978-10-17 |
| DE2805582A1 (de) | 1978-08-17 |
| SE433788B (sv) | 1984-06-12 |
| FR2381393A1 (fr) | 1978-09-15 |
| IL54018A0 (en) | 1978-04-30 |
| SE7801408L (sv) | 1978-08-17 |
| CA1090456A (en) | 1980-11-25 |
| GB1547140A (en) | 1979-06-06 |
| NL7801559A (nl) | 1978-08-18 |
| BE863929A (fr) | 1978-05-29 |
| IT7867314A0 (it) | 1978-02-15 |
| ES467047A1 (es) | 1978-11-01 |
| JPS53102688A (en) | 1978-09-07 |
| FR2381393B1 (es) | 1982-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5410672A (en) | Semiconductor | |
| JPS53136963A (en) | Semiconductor | |
| JPS5396683A (en) | Semiconductor | |
| GB2002580B (en) | Semiconductor devices | |
| JPS53124982A (en) | Semiconductor | |
| JPS5419688A (en) | Semiconductor | |
| GB2004417B (en) | Semiconductor devices | |
| IL54018A (en) | Metal oxide/indium phosphide semiconductor devices | |
| JPS5410673A (en) | Semiconductor | |
| JPS53135584A (en) | Semiconductor | |
| JPS5397384A (en) | Semiconductor | |
| GB1558055A (en) | Semiconductor devices | |
| GB2009508B (en) | Lateral type semiconductor devices | |
| ZA784796B (en) | Semiconductor devices | |
| GB1552268A (en) | Semiconductor etching | |
| JPS53145581A (en) | Semiconductor | |
| JPS5387184A (en) | Semiconductor | |
| JPS5421168A (en) | Semiconductor | |
| JPS53105979A (en) | Semiconductor | |
| JPS53115180A (en) | Semiconductor | |
| GB2004117B (en) | Semiconductor devices | |
| JPS53129987A (en) | Semiconductor | |
| JPS542051A (en) | Semiconductor | |
| JPS53105978A (en) | Semiconductor | |
| GB2011710B (en) | Semiconductor structures |