IL50583A - Nuclear radiation detector with deep diffused junction - Google Patents

Nuclear radiation detector with deep diffused junction

Info

Publication number
IL50583A
IL50583A IL50583A IL5058376A IL50583A IL 50583 A IL50583 A IL 50583A IL 50583 A IL50583 A IL 50583A IL 5058376 A IL5058376 A IL 5058376A IL 50583 A IL50583 A IL 50583A
Authority
IL
Israel
Prior art keywords
radiation detector
nuclear radiation
diffused junction
deep diffused
deep
Prior art date
Application number
IL50583A
Other languages
English (en)
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of IL50583A publication Critical patent/IL50583A/xx

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H10F30/2925—Li-compensated PIN gamma-ray detectors
    • H10P32/16—

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
IL50583A 1975-10-20 1976-09-30 Nuclear radiation detector with deep diffused junction IL50583A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/623,974 US4060432A (en) 1975-10-20 1975-10-20 Method for manufacturing nuclear radiation detector with deep diffused junction

Publications (1)

Publication Number Publication Date
IL50583A true IL50583A (en) 1979-11-30

Family

ID=24500096

Family Applications (1)

Application Number Title Priority Date Filing Date
IL50583A IL50583A (en) 1975-10-20 1976-09-30 Nuclear radiation detector with deep diffused junction

Country Status (7)

Country Link
US (2) US4060432A (ja)
JP (1) JPS5259591A (ja)
BE (1) BE847450A (ja)
DE (1) DE2646773A1 (ja)
FR (1) FR2329073A1 (ja)
GB (1) GB1562990A (ja)
IL (1) IL50583A (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4105478A (en) * 1977-01-06 1978-08-08 Honeywell, Inc. Doping hgcdte with li
CH655201A5 (de) * 1981-09-18 1986-03-27 Bbc Brown Boveri & Cie Elektronisches bauelement bestehend aus einer elektronenkanone und einer halbleiterdiode.
EP0179828B1 (de) * 1984-04-25 1989-07-19 KEMMER, Josef, Dr. Grossflächiger halbleiterstrahlungsdetektor niedriger kapazität
US10048389B1 (en) * 2017-04-19 2018-08-14 Mirion Technologies (Canberra), Inc. Centroid contact radiation detector system and method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2725316A (en) * 1953-05-18 1955-11-29 Bell Telephone Labor Inc Method of preparing pn junctions in semiconductors
US2819990A (en) * 1956-04-26 1958-01-14 Bell Telephone Labor Inc Treatment of semiconductive bodies
US2836523A (en) * 1956-08-02 1958-05-27 Bell Telephone Labor Inc Manufacture of semiconductive devices
US3116183A (en) * 1958-05-15 1963-12-31 Gen Electric Asymmetrically conductive device
US3036234A (en) * 1959-09-28 1962-05-22 Bell Telephone Labor Inc Electron discharge devices employing secondary electron emission
US3122655A (en) * 1961-12-27 1964-02-25 James J Murray Solid state reactive phase lagging device
US3293511A (en) * 1963-08-21 1966-12-20 Int Rectifier Corp Field effect transistor with concentric interior electrode
US3374124A (en) * 1965-01-07 1968-03-19 Ca Atomic Energy Ltd Method of making lithium-drift diodes by diffusion
US3340598A (en) * 1965-04-19 1967-09-12 Teledyne Inc Method of making field effect transistor device
US3461005A (en) * 1967-09-01 1969-08-12 Atomic Energy Commission P-contact for compensated p-germanium crystal
US3826721A (en) * 1972-10-24 1974-07-30 Gen Electric Method of forming lithium-doped germanium bodies by electrodeposition in a fused lithium electrolyte
US3795547A (en) * 1972-12-13 1974-03-05 Gen Electric Method of improving electrical characteristics of high purity germanium or silicon
US3976508A (en) * 1974-11-01 1976-08-24 Mobil Tyco Solar Energy Corporation Tubular solar cell devices

Also Published As

Publication number Publication date
DE2646773A1 (de) 1977-04-21
US4060432A (en) 1977-11-29
GB1562990A (en) 1980-03-19
FR2329073A1 (fr) 1977-05-20
BE847450A (fr) 1977-02-14
US4157559A (en) 1979-06-05
JPS5259591A (en) 1977-05-17

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