IL50583A - Nuclear radiation detector with deep diffused junction - Google Patents
Nuclear radiation detector with deep diffused junctionInfo
- Publication number
- IL50583A IL50583A IL50583A IL5058376A IL50583A IL 50583 A IL50583 A IL 50583A IL 50583 A IL50583 A IL 50583A IL 5058376 A IL5058376 A IL 5058376A IL 50583 A IL50583 A IL 50583A
- Authority
- IL
- Israel
- Prior art keywords
- radiation detector
- nuclear radiation
- diffused junction
- deep diffused
- deep
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/117—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
- H01L31/1175—Li compensated PIN gamma-ray detectors
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/623,974 US4060432A (en) | 1975-10-20 | 1975-10-20 | Method for manufacturing nuclear radiation detector with deep diffused junction |
Publications (1)
Publication Number | Publication Date |
---|---|
IL50583A true IL50583A (en) | 1979-11-30 |
Family
ID=24500096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL50583A IL50583A (en) | 1975-10-20 | 1976-09-30 | Nuclear radiation detector with deep diffused junction |
Country Status (7)
Country | Link |
---|---|
US (2) | US4060432A (fr) |
JP (1) | JPS5259591A (fr) |
BE (1) | BE847450A (fr) |
DE (1) | DE2646773A1 (fr) |
FR (1) | FR2329073A1 (fr) |
GB (1) | GB1562990A (fr) |
IL (1) | IL50583A (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4105478A (en) * | 1977-01-06 | 1978-08-08 | Honeywell, Inc. | Doping hgcdte with li |
CH655201A5 (de) * | 1981-09-18 | 1986-03-27 | Bbc Brown Boveri & Cie | Elektronisches bauelement bestehend aus einer elektronenkanone und einer halbleiterdiode. |
WO1985004987A1 (fr) * | 1984-04-25 | 1985-11-07 | Josef Kemmer | Detecteur de rayonnement semiconducteur a grande surface de faib le capacite |
US10048389B1 (en) * | 2017-04-19 | 2018-08-14 | Mirion Technologies (Canberra), Inc. | Centroid contact radiation detector system and method |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2725316A (en) * | 1953-05-18 | 1955-11-29 | Bell Telephone Labor Inc | Method of preparing pn junctions in semiconductors |
US2819990A (en) * | 1956-04-26 | 1958-01-14 | Bell Telephone Labor Inc | Treatment of semiconductive bodies |
US2836523A (en) * | 1956-08-02 | 1958-05-27 | Bell Telephone Labor Inc | Manufacture of semiconductive devices |
US3116183A (en) * | 1958-05-15 | 1963-12-31 | Gen Electric | Asymmetrically conductive device |
US3036234A (en) * | 1959-09-28 | 1962-05-22 | Bell Telephone Labor Inc | Electron discharge devices employing secondary electron emission |
US3122655A (en) * | 1961-12-27 | 1964-02-25 | James J Murray | Solid state reactive phase lagging device |
US3293511A (en) * | 1963-08-21 | 1966-12-20 | Int Rectifier Corp | Field effect transistor with concentric interior electrode |
US3374124A (en) * | 1965-01-07 | 1968-03-19 | Ca Atomic Energy Ltd | Method of making lithium-drift diodes by diffusion |
US3340598A (en) * | 1965-04-19 | 1967-09-12 | Teledyne Inc | Method of making field effect transistor device |
US3461005A (en) * | 1967-09-01 | 1969-08-12 | Atomic Energy Commission | P-contact for compensated p-germanium crystal |
US3826721A (en) * | 1972-10-24 | 1974-07-30 | Gen Electric | Method of forming lithium-doped germanium bodies by electrodeposition in a fused lithium electrolyte |
US3795547A (en) * | 1972-12-13 | 1974-03-05 | Gen Electric | Method of improving electrical characteristics of high purity germanium or silicon |
US3976508A (en) * | 1974-11-01 | 1976-08-24 | Mobil Tyco Solar Energy Corporation | Tubular solar cell devices |
-
1975
- 1975-10-20 US US05/623,974 patent/US4060432A/en not_active Expired - Lifetime
-
1976
- 1976-09-30 IL IL50583A patent/IL50583A/xx unknown
- 1976-10-16 DE DE19762646773 patent/DE2646773A1/de not_active Withdrawn
- 1976-10-19 JP JP51124501A patent/JPS5259591A/ja active Pending
- 1976-10-20 BE BE171641A patent/BE847450A/fr unknown
- 1976-10-20 FR FR7631495A patent/FR2329073A1/fr active Pending
- 1976-10-20 GB GB43579/76A patent/GB1562990A/en not_active Expired
-
1977
- 1977-01-31 US US05/763,836 patent/US4157559A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB1562990A (en) | 1980-03-19 |
BE847450A (fr) | 1977-02-14 |
FR2329073A1 (fr) | 1977-05-20 |
US4060432A (en) | 1977-11-29 |
JPS5259591A (en) | 1977-05-17 |
DE2646773A1 (de) | 1977-04-21 |
US4157559A (en) | 1979-06-05 |
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