IL50583A - Nuclear radiation detector with deep diffused junction - Google Patents

Nuclear radiation detector with deep diffused junction

Info

Publication number
IL50583A
IL50583A IL50583A IL5058376A IL50583A IL 50583 A IL50583 A IL 50583A IL 50583 A IL50583 A IL 50583A IL 5058376 A IL5058376 A IL 5058376A IL 50583 A IL50583 A IL 50583A
Authority
IL
Israel
Prior art keywords
radiation detector
nuclear radiation
diffused junction
deep diffused
deep
Prior art date
Application number
IL50583A
Other languages
English (en)
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of IL50583A publication Critical patent/IL50583A/xx

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/24Measuring radiation intensity with semiconductor detectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/117Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H01L31/1175Li compensated PIN gamma-ray detectors

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
IL50583A 1975-10-20 1976-09-30 Nuclear radiation detector with deep diffused junction IL50583A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/623,974 US4060432A (en) 1975-10-20 1975-10-20 Method for manufacturing nuclear radiation detector with deep diffused junction

Publications (1)

Publication Number Publication Date
IL50583A true IL50583A (en) 1979-11-30

Family

ID=24500096

Family Applications (1)

Application Number Title Priority Date Filing Date
IL50583A IL50583A (en) 1975-10-20 1976-09-30 Nuclear radiation detector with deep diffused junction

Country Status (7)

Country Link
US (2) US4060432A (fr)
JP (1) JPS5259591A (fr)
BE (1) BE847450A (fr)
DE (1) DE2646773A1 (fr)
FR (1) FR2329073A1 (fr)
GB (1) GB1562990A (fr)
IL (1) IL50583A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4105478A (en) * 1977-01-06 1978-08-08 Honeywell, Inc. Doping hgcdte with li
CH655201A5 (de) * 1981-09-18 1986-03-27 Bbc Brown Boveri & Cie Elektronisches bauelement bestehend aus einer elektronenkanone und einer halbleiterdiode.
WO1985004987A1 (fr) * 1984-04-25 1985-11-07 Josef Kemmer Detecteur de rayonnement semiconducteur a grande surface de faib le capacite
US10048389B1 (en) * 2017-04-19 2018-08-14 Mirion Technologies (Canberra), Inc. Centroid contact radiation detector system and method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2725316A (en) * 1953-05-18 1955-11-29 Bell Telephone Labor Inc Method of preparing pn junctions in semiconductors
US2819990A (en) * 1956-04-26 1958-01-14 Bell Telephone Labor Inc Treatment of semiconductive bodies
US2836523A (en) * 1956-08-02 1958-05-27 Bell Telephone Labor Inc Manufacture of semiconductive devices
US3116183A (en) * 1958-05-15 1963-12-31 Gen Electric Asymmetrically conductive device
US3036234A (en) * 1959-09-28 1962-05-22 Bell Telephone Labor Inc Electron discharge devices employing secondary electron emission
US3122655A (en) * 1961-12-27 1964-02-25 James J Murray Solid state reactive phase lagging device
US3293511A (en) * 1963-08-21 1966-12-20 Int Rectifier Corp Field effect transistor with concentric interior electrode
US3374124A (en) * 1965-01-07 1968-03-19 Ca Atomic Energy Ltd Method of making lithium-drift diodes by diffusion
US3340598A (en) * 1965-04-19 1967-09-12 Teledyne Inc Method of making field effect transistor device
US3461005A (en) * 1967-09-01 1969-08-12 Atomic Energy Commission P-contact for compensated p-germanium crystal
US3826721A (en) * 1972-10-24 1974-07-30 Gen Electric Method of forming lithium-doped germanium bodies by electrodeposition in a fused lithium electrolyte
US3795547A (en) * 1972-12-13 1974-03-05 Gen Electric Method of improving electrical characteristics of high purity germanium or silicon
US3976508A (en) * 1974-11-01 1976-08-24 Mobil Tyco Solar Energy Corporation Tubular solar cell devices

Also Published As

Publication number Publication date
GB1562990A (en) 1980-03-19
BE847450A (fr) 1977-02-14
FR2329073A1 (fr) 1977-05-20
US4060432A (en) 1977-11-29
JPS5259591A (en) 1977-05-17
DE2646773A1 (de) 1977-04-21
US4157559A (en) 1979-06-05

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