IL31358A - Method of fabricating monolithic semiconductor devices - Google Patents

Method of fabricating monolithic semiconductor devices

Info

Publication number
IL31358A
IL31358A IL31358A IL3135869A IL31358A IL 31358 A IL31358 A IL 31358A IL 31358 A IL31358 A IL 31358A IL 3135869 A IL3135869 A IL 3135869A IL 31358 A IL31358 A IL 31358A
Authority
IL
Israel
Prior art keywords
zones
pattern
epitaxial layer
semiconductor integrated
constitutes
Prior art date
Application number
IL31358A
Other languages
English (en)
Other versions
IL31358A0 (en
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IL31358A0 publication Critical patent/IL31358A0/xx
Publication of IL31358A publication Critical patent/IL31358A/en

Links

Classifications

    • H10W20/021—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H10W10/031—
    • H10W10/30—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/036—Diffusion, nonselective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/921—Nonselective diffusion

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
IL31358A 1968-02-05 1969-01-01 Method of fabricating monolithic semiconductor devices IL31358A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70316468A 1968-02-05 1968-02-05

Publications (2)

Publication Number Publication Date
IL31358A0 IL31358A0 (en) 1969-03-27
IL31358A true IL31358A (en) 1971-11-29

Family

ID=24824290

Family Applications (1)

Application Number Title Priority Date Filing Date
IL31358A IL31358A (en) 1968-02-05 1969-01-01 Method of fabricating monolithic semiconductor devices

Country Status (10)

Country Link
US (1) US3575741A (enExample)
BE (1) BE726241A (enExample)
CH (1) CH498493A (enExample)
DE (1) DE1903870B2 (enExample)
ES (1) ES363412A1 (enExample)
FR (1) FR1598853A (enExample)
GB (1) GB1259803A (enExample)
IE (1) IE32822B1 (enExample)
IL (1) IL31358A (enExample)
NL (1) NL6901818A (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3780426A (en) * 1969-10-15 1973-12-25 Y Ono Method of forming a semiconductor circuit element in an isolated epitaxial layer
US3716425A (en) * 1970-08-24 1973-02-13 Motorola Inc Method of making semiconductor devices through overlapping diffusions
JPS509635B1 (enExample) * 1970-09-07 1975-04-14
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
US3697827A (en) * 1971-02-09 1972-10-10 Unitrode Corp Structure and formation of semiconductors with transverse conductivity gradients
US3787253A (en) * 1971-12-17 1974-01-22 Ibm Emitter diffusion isolated semiconductor structure
GB1388926A (en) * 1972-03-04 1975-03-26 Ferranti Ltd Manufacture of silicon semiconductor devices
US4053336A (en) * 1972-05-30 1977-10-11 Ferranti Limited Method of manufacturing a semiconductor integrated circuit device having a conductive plane and a diffused network of conductive tracks
US3909807A (en) * 1974-09-03 1975-09-30 Bell Telephone Labor Inc Integrated circuit memory cell
US3971059A (en) * 1974-09-23 1976-07-20 National Semiconductor Corporation Complementary bipolar transistors having collector diffused isolation
US4067038A (en) * 1976-12-22 1978-01-03 Harris Corporation Substrate fed logic and method of fabrication
SU773793A1 (ru) * 1977-11-02 1980-10-23 Предприятие П/Я -6429 Способ изготовлени полупроводниковых интегральных бипол рных схем
JPS5632762A (en) * 1979-08-27 1981-04-02 Fujitsu Ltd Semiconductor device
GB8426897D0 (en) * 1984-10-24 1984-11-28 Ferranti Plc Fabricating semiconductor devices
US4969823A (en) * 1986-09-26 1990-11-13 Analog Devices, Incorporated Integrated circuit with complementary junction-isolated bipolar transistors and method of making same

Also Published As

Publication number Publication date
BE726241A (enExample) 1969-05-29
CH498493A (de) 1970-10-31
NL6901818A (enExample) 1969-08-07
FR1598853A (enExample) 1970-07-06
DE1903870B2 (de) 1977-03-24
IE32822B1 (en) 1973-12-12
GB1259803A (en) 1972-01-12
DE1903870A1 (de) 1969-10-30
IE32822L (en) 1969-08-05
US3575741A (en) 1971-04-20
IL31358A0 (en) 1969-03-27
ES363412A1 (es) 1970-12-16

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