IL309226A - Methods and systems for regulating the optimization of application-specific semiconductor measurement system parameter settings - Google Patents

Methods and systems for regulating the optimization of application-specific semiconductor measurement system parameter settings

Info

Publication number
IL309226A
IL309226A IL309226A IL30922623A IL309226A IL 309226 A IL309226 A IL 309226A IL 309226 A IL309226 A IL 309226A IL 30922623 A IL30922623 A IL 30922623A IL 309226 A IL309226 A IL 309226A
Authority
IL
Israel
Prior art keywords
regularizing
optimization
systems
methods
application specific
Prior art date
Application number
IL309226A
Other languages
English (en)
Hebrew (he)
Inventor
Christopher D Liman
Bindi M Nagda
Antonio Arion Gellineau
Original Assignee
Kla Corp
Christopher D Liman
Bindi M Nagda
Antonio Arion Gellineau
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Corp, Christopher D Liman, Bindi M Nagda, Antonio Arion Gellineau filed Critical Kla Corp
Publication of IL309226A publication Critical patent/IL309226A/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20008Constructional details of analysers, e.g. characterised by X-ray source, detector or optical system; Accessories therefor; Preparing specimens therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20083Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials by using a combination of at least two measurements at least one being a transmission measurement and one a scatter measurement
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/201Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials by measuring small-angle scattering
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70681Metrology strategies
    • G03F7/706831Recipe selection or optimisation, e.g. select or optimise recipe parameters such as wavelength, polarisation or illumination modes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00Investigating materials by wave or particle radiation
    • G01N2223/30Accessories, mechanical or electrical features
    • G01N2223/304Accessories, mechanical or electrical features electric circuits, signal processing
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00Investigating materials by wave or particle radiation
    • G01N2223/60Specific applications or type of materials
    • G01N2223/611Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116Specific applications or type of materials patterned objects; electronic devices semiconductor wafer

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Electromagnetism (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
IL309226A 2021-12-29 2022-11-08 Methods and systems for regulating the optimization of application-specific semiconductor measurement system parameter settings IL309226A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163294841P 2021-12-29 2021-12-29
US17/828,461 US12360062B1 (en) 2021-12-29 2022-05-31 Methods and systems for regularizing the optimization of application specific semiconductor measurement system parameter settings
PCT/US2022/049179 WO2023129279A1 (en) 2021-12-29 2022-11-08 Methods and systems for regularizing the optimization of application specific semiconductor measurement system parameter settings

Publications (1)

Publication Number Publication Date
IL309226A true IL309226A (en) 2024-02-01

Family

ID=87000193

Family Applications (1)

Application Number Title Priority Date Filing Date
IL309226A IL309226A (en) 2021-12-29 2022-11-08 Methods and systems for regulating the optimization of application-specific semiconductor measurement system parameter settings

Country Status (6)

Country Link
US (1) US12360062B1 (https=)
JP (1) JP7745663B2 (https=)
KR (1) KR20240128795A (https=)
IL (1) IL309226A (https=)
TW (1) TWI912541B (https=)
WO (1) WO2023129279A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230173023A (ko) * 2022-06-16 2023-12-26 캐논 가부시끼가이샤 계측방법, 계측장치, 리소그래피 장치, 및 물품 제조방법
CN118036407B (zh) * 2024-04-11 2024-07-02 华中科技大学 一种平板式音圈电磁式力控执行器设计与优化方法及系统

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608526A (en) 1995-01-19 1997-03-04 Tencor Instruments Focused beam spectroscopic ellipsometry method and system
US6023338A (en) 1996-07-12 2000-02-08 Bareket; Noah Overlay alignment measurement of wafers
US5859424A (en) 1997-04-08 1999-01-12 Kla-Tencor Corporation Apodizing filter system useful for reducing spot size in optical measurements and other applications
US6429943B1 (en) 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
US6787773B1 (en) 2000-06-07 2004-09-07 Kla-Tencor Corporation Film thickness measurement using electron-beam induced x-ray microanalysis
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7068833B1 (en) 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US20030002043A1 (en) 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
US6716646B1 (en) 2001-07-16 2004-04-06 Advanced Micro Devices, Inc. Method and apparatus for performing overlay measurements using scatterometry
WO2003054475A2 (en) 2001-12-19 2003-07-03 Kla-Tencor Technologies Corporation Parametric profiling using optical spectroscopic systems
US6778275B2 (en) 2002-02-20 2004-08-17 Micron Technology, Inc. Aberration mark and method for estimating overlay error and optical aberrations
JP4222927B2 (ja) 2002-09-20 2009-02-12 エーエスエムエル ネザーランズ ビー.ブイ. 少なくとも2波長を使用するリソグラフィ装置用アライメント・システム
US6992764B1 (en) 2002-09-30 2006-01-31 Nanometrics Incorporated Measuring an alignment target with a single polarization state
US7842933B2 (en) 2003-10-22 2010-11-30 Applied Materials Israel, Ltd. System and method for measuring overlay errors
US6937337B2 (en) 2003-11-19 2005-08-30 International Business Machines Corporation Overlay target and measurement method using reference and sub-grids
US7126700B2 (en) * 2003-12-12 2006-10-24 Timbre Technologies, Inc. Parametric optimization of optical metrology model
US7321426B1 (en) 2004-06-02 2008-01-22 Kla-Tencor Technologies Corporation Optical metrology on patterned samples
US7483133B2 (en) * 2004-12-09 2009-01-27 Kla-Tencor Technologies Corporation. Multiple angle of incidence spectroscopic scatterometer system
US7478019B2 (en) 2005-01-26 2009-01-13 Kla-Tencor Corporation Multiple tool and structure analysis
JP4585926B2 (ja) 2005-06-17 2010-11-24 株式会社日立ハイテクノロジーズ パターンレイヤーデータ生成装置、それを用いたパターンレイヤーデータ生成システム、半導体パターン表示装置、パターンレイヤーデータ生成方法、及びコンピュータプログラム
US7567351B2 (en) 2006-02-02 2009-07-28 Kla-Tencor Corporation High resolution monitoring of CD variations
JP4887062B2 (ja) 2006-03-14 2012-02-29 株式会社日立ハイテクノロジーズ 試料寸法測定方法、及び試料寸法測定装置
US7406153B2 (en) 2006-08-15 2008-07-29 Jordan Valley Semiconductors Ltd. Control of X-ray beam spot size
TWI416096B (zh) * 2007-07-11 2013-11-21 Nova Measuring Instr Ltd 用於監控圖案化結構的性質之方法及系統
US7873585B2 (en) 2007-08-31 2011-01-18 Kla-Tencor Technologies Corporation Apparatus and methods for predicting a semiconductor parameter across an area of a wafer
US7929667B1 (en) 2008-10-02 2011-04-19 Kla-Tencor Corporation High brightness X-ray metrology
US8068662B2 (en) 2009-03-30 2011-11-29 Hermes Microvision, Inc. Method and system for determining a defect during charged particle beam inspection of a sample
JP5764380B2 (ja) 2010-04-29 2015-08-19 エフ イー アイ カンパニFei Company Sem画像化法
US9046475B2 (en) 2011-05-19 2015-06-02 Applied Materials Israel, Ltd. High electron energy based overlay error measurement methods and systems
US10107621B2 (en) 2012-02-15 2018-10-23 Nanometrics Incorporated Image based overlay measurement with finite gratings
US10801975B2 (en) 2012-05-08 2020-10-13 Kla-Tencor Corporation Metrology tool with combined X-ray and optical scatterometers
US10013518B2 (en) 2012-07-10 2018-07-03 Kla-Tencor Corporation Model building and analysis engine for combined X-ray and optical metrology
US9129715B2 (en) 2012-09-05 2015-09-08 SVXR, Inc. High speed x-ray inspection microscope
WO2014062972A1 (en) 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US9581430B2 (en) 2012-10-19 2017-02-28 Kla-Tencor Corporation Phase characterization of targets
US10769320B2 (en) 2012-12-18 2020-09-08 Kla-Tencor Corporation Integrated use of model-based metrology and a process model
US9291554B2 (en) 2013-02-05 2016-03-22 Kla-Tencor Corporation Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection
US9826614B1 (en) 2013-03-15 2017-11-21 Kla-Tencor Corporation Compac X-ray source for semiconductor metrology
US10101670B2 (en) 2013-03-27 2018-10-16 Kla-Tencor Corporation Statistical model-based metrology
US9857291B2 (en) * 2013-05-16 2018-01-02 Kla-Tencor Corporation Metrology system calibration refinement
US9915522B1 (en) 2013-06-03 2018-03-13 Kla-Tencor Corporation Optimized spatial modeling for optical CD metrology
US10502694B2 (en) 2013-08-06 2019-12-10 Kla-Tencor Corporation Methods and apparatus for patterned wafer characterization
US9846132B2 (en) 2013-10-21 2017-12-19 Kla-Tencor Corporation Small-angle scattering X-ray metrology systems and methods
US9885962B2 (en) 2013-10-28 2018-02-06 Kla-Tencor Corporation Methods and apparatus for measuring semiconductor device overlay using X-ray metrology
WO2015167753A2 (en) 2014-04-03 2015-11-05 Massachusetts Institute Of Technology Compact x-ray source for cd-saxs
US9494535B2 (en) 2014-04-21 2016-11-15 Kla-Tencor Corporation Scatterometry-based imaging and critical dimension metrology
US10152678B2 (en) 2014-11-19 2018-12-11 Kla-Tencor Corporation System, method and computer program product for combining raw data from multiple metrology tools
US10324050B2 (en) 2015-01-14 2019-06-18 Kla-Tencor Corporation Measurement system optimization for X-ray based metrology
US10545104B2 (en) 2015-04-28 2020-01-28 Kla-Tencor Corporation Computationally efficient X-ray based overlay measurement
US10502692B2 (en) * 2015-07-24 2019-12-10 Kla-Tencor Corporation Automated metrology system selection
US20200025554A1 (en) 2015-12-08 2020-01-23 Kla-Tencor Corporation System, method and computer program product for fast automatic determination of signals for efficient metrology
US10352695B2 (en) 2015-12-11 2019-07-16 Kla-Tencor Corporation X-ray scatterometry metrology for high aspect ratio structures
US10775323B2 (en) 2016-10-18 2020-09-15 Kla-Tencor Corporation Full beam metrology for X-ray scatterometry systems
US10481111B2 (en) 2016-10-21 2019-11-19 Kla-Tencor Corporation Calibration of a small angle X-ray scatterometry based metrology system
US11073487B2 (en) 2017-05-11 2021-07-27 Kla-Tencor Corporation Methods and systems for characterization of an x-ray beam with high spatial resolution
US11333621B2 (en) 2017-07-11 2022-05-17 Kla-Tencor Corporation Methods and systems for semiconductor metrology based on polychromatic soft X-Ray diffraction
US10959318B2 (en) * 2018-01-10 2021-03-23 Kla-Tencor Corporation X-ray metrology system with broadband laser produced plasma illuminator
US11519869B2 (en) 2018-03-20 2022-12-06 Kla Tencor Corporation Methods and systems for real time measurement control
US11060982B2 (en) * 2019-03-17 2021-07-13 Kla Corporation Multi-dimensional model of optical dispersion
US11698251B2 (en) 2020-01-07 2023-07-11 Kla Corporation Methods and systems for overlay measurement based on soft X-ray Scatterometry
US11513085B2 (en) * 2020-02-20 2022-11-29 Kla Corporation Measurement and control of wafer tilt for x-ray based metrology

Also Published As

Publication number Publication date
US12360062B1 (en) 2025-07-15
KR20240128795A (ko) 2024-08-27
JP2025502583A (ja) 2025-01-28
TWI912541B (zh) 2026-01-21
TW202344807A (zh) 2023-11-16
JP7745663B2 (ja) 2025-09-29
WO2023129279A1 (en) 2023-07-06

Similar Documents

Publication Publication Date Title
IL309226A (en) Methods and systems for regulating the optimization of application-specific semiconductor measurement system parameter settings
GB201902813D0 (en) Calibration system and method for robotic cells
IL268227A (en) A system and method for cognitive engineering technology for the automation and control of systems
GB202016046D0 (en) Systems and methods for dynamic demand sensing
GB202207268D0 (en) Independent space-based intelligent psychological assessment and intervention system and method
EP3593400A4 (en) SYSTEMS AND PROCEDURES FOR THERMAL REGULATION
SG11202101695TA (en) Systems and methods for reporting of beam correspondence state
CA3293628A1 (en) Methods, systems, and header structures for tooling fixture and post-cure fixture calibration
GB202406627D0 (en) systems and methods for posture-based modelling
GB201811012D0 (en) Advanced networked lighting control system including improved systems and methods for automated self-grouping of lighting fixtures
EP3262598A4 (en) Systems and methods of automatically monitoring real-time activity at a location for determining wait times using wearable devices
GB202016092D0 (en) Systems and methods for features engineering
IL275473A (en) Systems and methods for control and monitoring of actuated valves
EP4136403A4 (en) SYSTEMS AND METHODS FOR OBJECT MEASURING
SG10202010223PA (en) Method and system for monitoring and integration of one or more intelligent conversational agents
EP4067817B8 (en) System and method for spatial positioning of magnetometers
EP3746781A4 (en) VITAMIN D METABOLITE DETECTION METHODS AND SYSTEMS
GB2581007B (en) Fixture for machining parts and method of using same
IL276751A (en) Methods and systems for thermal imaging of moving objects
EP4013889A4 (en) SCHIZOPHRENIA RISK ASSESSMENT SYSTEM AND METHOD
ZA202001552B (en) Systems and methods for integrated and comprehensive management of cannabis products
SG11202011562WA (en) Systems and methods for efficient management and modification of images
PL3930899T3 (pl) Sposób i układ mikroprzepływowy do izolacji cząstek
EP4104043A4 (en) SYSTEMS AND PROCEDURES FOR PROPERTY MANAGEMENT
GB2595065B (en) Method and system for tracking and determining an indoor position of an object