IL307789A - מדידת זיהום שנצבר על דוגמת מוליך למחצה - Google Patents

מדידת זיהום שנצבר על דוגמת מוליך למחצה

Info

Publication number
IL307789A
IL307789A IL307789A IL30778923A IL307789A IL 307789 A IL307789 A IL 307789A IL 307789 A IL307789 A IL 307789A IL 30778923 A IL30778923 A IL 30778923A IL 307789 A IL307789 A IL 307789A
Authority
IL
Israel
Prior art keywords
specimen
chamber
time interval
measurement cycles
measurements
Prior art date
Application number
IL307789A
Other languages
English (en)
Original Assignee
Applied Materials Israel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Israel Ltd filed Critical Applied Materials Israel Ltd
Priority to IL307789A priority Critical patent/IL307789A/he
Priority to PCT/IL2024/051011 priority patent/WO2025083688A1/en
Priority to TW113139510A priority patent/TW202541193A/zh
Publication of IL307789A publication Critical patent/IL307789A/he

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70655—Non-optical, e.g. atomic force microscope [AFM] or critical dimension scanning electron microscope [CD-SEM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
IL307789A 2023-10-17 2023-10-17 מדידת זיהום שנצבר על דוגמת מוליך למחצה IL307789A (he)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IL307789A IL307789A (he) 2023-10-17 2023-10-17 מדידת זיהום שנצבר על דוגמת מוליך למחצה
PCT/IL2024/051011 WO2025083688A1 (en) 2023-10-17 2024-10-15 Measuring contamination accumulated on a semiconductor specimen
TW113139510A TW202541193A (zh) 2023-10-17 2024-10-17 測量半導體試樣上累積的污染

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IL307789A IL307789A (he) 2023-10-17 2023-10-17 מדידת זיהום שנצבר על דוגמת מוליך למחצה

Publications (1)

Publication Number Publication Date
IL307789A true IL307789A (he) 2025-05-01

Family

ID=95448575

Family Applications (1)

Application Number Title Priority Date Filing Date
IL307789A IL307789A (he) 2023-10-17 2023-10-17 מדידת זיהום שנצבר על דוגמת מוליך למחצה

Country Status (3)

Country Link
IL (1) IL307789A (he)
TW (1) TW202541193A (he)
WO (1) WO2025083688A1 (he)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0932194A1 (en) * 1997-12-30 1999-07-28 International Business Machines Corporation Method and system for semiconductor wafer fabrication process real-time in-situ interactive supervision
US6620630B2 (en) * 2001-09-24 2003-09-16 Extraction Systems, Inc. System and method for determining and controlling contamination
US8257546B2 (en) * 2003-04-11 2012-09-04 Applied Materials, Inc. Method and system for monitoring an etch process

Also Published As

Publication number Publication date
WO2025083688A1 (en) 2025-04-24
TW202541193A (zh) 2025-10-16

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