IL272900B2 - An electromagnetic radiation detector structure with efficient absorption and a method for producing such a structure - Google Patents
An electromagnetic radiation detector structure with efficient absorption and a method for producing such a structureInfo
- Publication number
- IL272900B2 IL272900B2 IL272900A IL27290020A IL272900B2 IL 272900 B2 IL272900 B2 IL 272900B2 IL 272900 A IL272900 A IL 272900A IL 27290020 A IL27290020 A IL 27290020A IL 272900 B2 IL272900 B2 IL 272900B2
- Authority
- IL
- Israel
- Prior art keywords
- fabry
- perot cavity
- refractive index
- medium
- absorption region
- Prior art date
Links
- 238000010521 absorption reaction Methods 0.000 title claims description 107
- 230000005670 electromagnetic radiation Effects 0.000 title claims description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title claims description 10
- 238000002161 passivation Methods 0.000 claims description 13
- 230000035515 penetration Effects 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 7
- 230000006978 adaptation Effects 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 238000011144 upstream manufacturing Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims description 2
- 238000009396 hybridization Methods 0.000 claims description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 7
- 230000005684 electric field Effects 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 238000013507 mapping Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- -1 cadmium mercury tellurides Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Spectrometry And Color Measurement (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1902036A FR3093235B1 (fr) | 2019-02-27 | 2019-02-27 | Structure de détection de rayonnement électromagnétique à haute efficacité d’absorption et un procédé de fabrication d’une telle structure |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| IL272900A IL272900A (en) | 2020-08-31 |
| IL272900B IL272900B (en) | 2022-12-01 |
| IL272900B2 true IL272900B2 (en) | 2023-04-01 |
Family
ID=67383961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL272900A IL272900B2 (en) | 2019-02-27 | 2020-02-25 | An electromagnetic radiation detector structure with efficient absorption and a method for producing such a structure |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11316062B2 (fr) |
| EP (1) | EP3703138B1 (fr) |
| FR (1) | FR3093235B1 (fr) |
| IL (1) | IL272900B2 (fr) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2842945B1 (fr) | 2002-07-25 | 2005-11-11 | Centre Nat Rech Scient | Dispositif de photodetection de type msm et a cavite resonnante comprenant un miroir a reseau d'electrodes metalliques |
| FR2947956A1 (fr) | 2009-07-13 | 2011-01-14 | Commissariat Energie Atomique | Element photodetecteur |
| FR2992471B1 (fr) | 2012-06-20 | 2015-05-15 | Commissariat Energie Atomique | Structure semiconductrice comportant une zone absorbante placee dans une cavite focalisante |
| US10297699B2 (en) * | 2016-05-27 | 2019-05-21 | The United States Of America, As Represented By The Secretary Of The Navy | In-plane resonant-cavity infrared photodetectors with fully-depleted absorbers |
-
2019
- 2019-02-27 FR FR1902036A patent/FR3093235B1/fr active Active
-
2020
- 2020-02-25 IL IL272900A patent/IL272900B2/en unknown
- 2020-02-25 EP EP20159364.7A patent/EP3703138B1/fr active Active
- 2020-02-26 US US16/801,669 patent/US11316062B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| FR3093235B1 (fr) | 2021-03-12 |
| US11316062B2 (en) | 2022-04-26 |
| FR3093235A1 (fr) | 2020-08-28 |
| US20200274018A1 (en) | 2020-08-27 |
| EP3703138A1 (fr) | 2020-09-02 |
| IL272900B (en) | 2022-12-01 |
| EP3703138B1 (fr) | 2021-10-20 |
| IL272900A (en) | 2020-08-31 |
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