IL156107A0 - Low dielectric materials and methods for making same - Google Patents
Low dielectric materials and methods for making sameInfo
- Publication number
- IL156107A0 IL156107A0 IL15610703A IL15610703A IL156107A0 IL 156107 A0 IL156107 A0 IL 156107A0 IL 15610703 A IL15610703 A IL 15610703A IL 15610703 A IL15610703 A IL 15610703A IL 156107 A0 IL156107 A0 IL 156107A0
- Authority
- IL
- Israel
- Prior art keywords
- methods
- low dielectric
- dielectric materials
- making same
- making
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/16—Preparation of silica xerogels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249967—Inorganic matrix in void-containing component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249967—Inorganic matrix in void-containing component
- Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249978—Voids specified as micro
- Y10T428/249979—Specified thickness of void-containing component [absolute or relative] or numerical cell dimension
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/158,511 US7307343B2 (en) | 2002-05-30 | 2002-05-30 | Low dielectric materials and methods for making same |
Publications (2)
Publication Number | Publication Date |
---|---|
IL156107A0 true IL156107A0 (en) | 2003-12-23 |
IL156107A IL156107A (en) | 2008-12-29 |
Family
ID=29549253
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL183717A IL183717A0 (en) | 2002-05-30 | 2003-05-26 | Low dielectric materials and methods for making same |
IL156107A IL156107A (en) | 2002-05-30 | 2003-05-26 | Low dielectric materials and methods for making same |
IL183716A IL183716A0 (en) | 2002-05-30 | 2003-05-26 | Low dielectric materials and methods for making same |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL183717A IL183717A0 (en) | 2002-05-30 | 2003-05-26 | Low dielectric materials and methods for making same |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL183716A IL183716A0 (en) | 2002-05-30 | 2003-05-26 | Low dielectric materials and methods for making same |
Country Status (8)
Country | Link |
---|---|
US (2) | US7307343B2 (en) |
EP (1) | EP1369907A3 (en) |
JP (2) | JP4125637B2 (en) |
KR (1) | KR20040030216A (en) |
CN (2) | CN1303619C (en) |
IL (3) | IL183717A0 (en) |
SG (1) | SG130010A1 (en) |
TW (1) | TWI261543B (en) |
Families Citing this family (77)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6824879B2 (en) * | 1999-06-10 | 2004-11-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
US6890640B2 (en) * | 1999-12-03 | 2005-05-10 | Caterpillar Inc | Patterned hydrophilic-oleophilic metal oxide coating and method of forming |
US7265062B2 (en) * | 2000-04-04 | 2007-09-04 | Applied Materials, Inc. | Ionic additives for extreme low dielectric constant chemical formulations |
US7122880B2 (en) | 2002-05-30 | 2006-10-17 | Air Products And Chemicals, Inc. | Compositions for preparing low dielectric materials |
WO2004030070A1 (en) | 2002-09-26 | 2004-04-08 | Hitachi Chemical Co., Ltd. | Borazine based resin and method for production thereof, borazine based resin composition, insulating coating and method for formation thereof, and electronic parts having the insulating coating |
US7288292B2 (en) * | 2003-03-18 | 2007-10-30 | International Business Machines Corporation | Ultra low k (ULK) SiCOH film and method |
US7208389B1 (en) | 2003-03-31 | 2007-04-24 | Novellus Systems, Inc. | Method of porogen removal from porous low-k films using UV radiation |
US7241704B1 (en) * | 2003-03-31 | 2007-07-10 | Novellus Systems, Inc. | Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups |
US20050260420A1 (en) * | 2003-04-01 | 2005-11-24 | Collins Martha J | Low dielectric materials and methods for making same |
KR100496286B1 (en) * | 2003-04-12 | 2005-06-17 | 삼성에스디아이 주식회사 | Organic electro luminescence display and method for manufacturing the same |
US7390537B1 (en) | 2003-11-20 | 2008-06-24 | Novellus Systems, Inc. | Methods for producing low-k CDO films with low residual stress |
US7030468B2 (en) * | 2004-01-16 | 2006-04-18 | International Business Machines Corporation | Low k and ultra low k SiCOH dielectric films and methods to form the same |
US20050196974A1 (en) * | 2004-03-02 | 2005-09-08 | Weigel Scott J. | Compositions for preparing low dielectric materials containing solvents |
US7341761B1 (en) | 2004-03-11 | 2008-03-11 | Novellus Systems, Inc. | Methods for producing low-k CDO films |
US7381662B1 (en) | 2004-03-11 | 2008-06-03 | Novellus Systems, Inc. | Methods for improving the cracking resistance of low-k dielectric materials |
US7781351B1 (en) | 2004-04-07 | 2010-08-24 | Novellus Systems, Inc. | Methods for producing low-k carbon doped oxide films with low residual stress |
US7622400B1 (en) | 2004-05-18 | 2009-11-24 | Novellus Systems, Inc. | Method for improving mechanical properties of low dielectric constant materials |
US7326444B1 (en) | 2004-09-14 | 2008-02-05 | Novellus Systems, Inc. | Methods for improving integration performance of low stress CDO films |
US7695765B1 (en) | 2004-11-12 | 2010-04-13 | Novellus Systems, Inc. | Methods for producing low-stress carbon-doped oxide films with improved integration properties |
US7217648B2 (en) * | 2004-12-22 | 2007-05-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post-ESL porogen burn-out for copper ELK integration |
US7166531B1 (en) | 2005-01-31 | 2007-01-23 | Novellus Systems, Inc. | VLSI fabrication processes for introducing pores into dielectric materials |
US7867779B2 (en) | 2005-02-03 | 2011-01-11 | Air Products And Chemicals, Inc. | System and method comprising same for measurement and/or analysis of particles in gas stream |
US20060183055A1 (en) * | 2005-02-15 | 2006-08-17 | O'neill Mark L | Method for defining a feature on a substrate |
US7202564B2 (en) * | 2005-02-16 | 2007-04-10 | International Business Machines Corporation | Advanced low dielectric constant organosilicon plasma chemical vapor deposition films |
JP2006291160A (en) * | 2005-03-14 | 2006-10-26 | Fuji Photo Film Co Ltd | Film-forming composition, insulating film and electronic device using the same |
WO2006135369A1 (en) * | 2005-06-10 | 2006-12-21 | Axcelis Technologies, Inc. | Ultraviolet assisted propgen removal and/or curing processes for forming porous low k dielectrics |
JP2006351880A (en) * | 2005-06-16 | 2006-12-28 | Matsushita Electric Ind Co Ltd | Forming method of interlayer insulating film and structure of interlayer insulating film |
NZ565663A (en) | 2005-08-09 | 2011-03-31 | Univ Sunderland | The use of hydrophobic silica particles in detecting and identifying fingerprints |
US7475368B2 (en) * | 2006-01-20 | 2009-01-06 | International Business Machines Corporation | Deflection analysis system and method for circuit design |
US7632771B2 (en) * | 2006-02-07 | 2009-12-15 | Imec | UV light exposure for functionalization and hydrophobization of pure-silica zeolites |
US20070196773A1 (en) * | 2006-02-22 | 2007-08-23 | Weigel Scott J | Top coat for lithography processes |
US8399349B2 (en) | 2006-04-18 | 2013-03-19 | Air Products And Chemicals, Inc. | Materials and methods of forming controlled void |
US7569469B2 (en) * | 2006-08-03 | 2009-08-04 | International Business Machines Corporation | Dielectric nanostructure and method for its manufacture |
US7906174B1 (en) | 2006-12-07 | 2011-03-15 | Novellus Systems, Inc. | PECVD methods for producing ultra low-k dielectric films using UV treatment |
US8394483B2 (en) | 2007-01-24 | 2013-03-12 | Micron Technology, Inc. | Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly |
US8083953B2 (en) | 2007-03-06 | 2011-12-27 | Micron Technology, Inc. | Registered structure formation via the application of directed thermal energy to diblock copolymer films |
US8557128B2 (en) | 2007-03-22 | 2013-10-15 | Micron Technology, Inc. | Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers |
US7959975B2 (en) | 2007-04-18 | 2011-06-14 | Micron Technology, Inc. | Methods of patterning a substrate |
US8097175B2 (en) | 2008-10-28 | 2012-01-17 | Micron Technology, Inc. | Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure |
US8294139B2 (en) | 2007-06-21 | 2012-10-23 | Micron Technology, Inc. | Multilayer antireflection coatings, structures and devices including the same and methods of making the same |
US8372295B2 (en) | 2007-04-20 | 2013-02-12 | Micron Technology, Inc. | Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method |
JP4364258B2 (en) * | 2007-05-15 | 2009-11-11 | 株式会社東芝 | Semiconductor device and manufacturing method of semiconductor device |
US8404124B2 (en) | 2007-06-12 | 2013-03-26 | Micron Technology, Inc. | Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces |
KR101562681B1 (en) * | 2007-06-15 | 2015-10-22 | 에스비에이 머티어리얼스 인코포레이티드 | Low k dielectric |
US8080615B2 (en) | 2007-06-19 | 2011-12-20 | Micron Technology, Inc. | Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide |
US8283258B2 (en) * | 2007-08-16 | 2012-10-09 | Micron Technology, Inc. | Selective wet etching of hafnium aluminum oxide films |
US20090093135A1 (en) * | 2007-10-04 | 2009-04-09 | Asm Japan K.K. | Semiconductor manufacturing apparatus and method for curing material with uv light |
US20090096106A1 (en) * | 2007-10-12 | 2009-04-16 | Air Products And Chemicals, Inc. | Antireflective coatings |
US8987039B2 (en) | 2007-10-12 | 2015-03-24 | Air Products And Chemicals, Inc. | Antireflective coatings for photovoltaic applications |
US8999492B2 (en) | 2008-02-05 | 2015-04-07 | Micron Technology, Inc. | Method to produce nanometer-sized features with directed assembly of block copolymers |
US8101261B2 (en) | 2008-02-13 | 2012-01-24 | Micron Technology, Inc. | One-dimensional arrays of block copolymer cylinders and applications thereof |
EP2252547A4 (en) * | 2008-02-14 | 2013-09-11 | Univ Missouri | Ultra-low refractive index high surface area nanoparticulate films and nanoparticles |
US8873918B2 (en) | 2008-02-14 | 2014-10-28 | The Curators Of The University Of Missouri | Organosilica nanoparticles and method for making |
US8426313B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference |
US8425982B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
US8114300B2 (en) * | 2008-04-21 | 2012-02-14 | Micron Technology, Inc. | Multi-layer method for formation of registered arrays of cylindrical pores in polymer films |
US8114301B2 (en) * | 2008-05-02 | 2012-02-14 | Micron Technology, Inc. | Graphoepitaxial self-assembly of arrays of downward facing half-cylinders |
US20090324928A1 (en) * | 2008-06-26 | 2009-12-31 | Vijayakumar Ramachandrarao | Forming ultra low dielectric constant porous dielectric films and structures formed thereby |
JP4989571B2 (en) * | 2008-07-02 | 2012-08-01 | 株式会社アルバック | Porous membrane precursor composition solution |
BRPI0918200A2 (en) | 2008-12-23 | 2015-12-08 | 3M Innovative Properties Co | detection element and method of detection of organic chemical analytes |
BRPI0918209A2 (en) | 2008-12-23 | 2021-08-31 | 3M Innovative Properties Company | SENSOR |
US8557877B2 (en) * | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
JP2011040634A (en) * | 2009-08-13 | 2011-02-24 | Ulvac Japan Ltd | Precursor composition of porous film, porous film, method of manufacturing the same, and semiconductor device |
US8304493B2 (en) | 2010-08-20 | 2012-11-06 | Micron Technology, Inc. | Methods of forming block copolymers |
TWI451495B (en) * | 2010-12-13 | 2014-09-01 | Univ Nat Taiwan | Method for manufacturing low-k films by using basic solution |
US8859050B2 (en) | 2011-03-14 | 2014-10-14 | The Curators Of The University Of Missouri | Patterning of ultra-low refractive index high surface area nanoparticulate films |
CN102426298B (en) * | 2011-06-17 | 2014-02-05 | 上海华力微电子有限公司 | Method for monitoring film dielectric constant stability by using refractive index |
US8900963B2 (en) | 2011-11-02 | 2014-12-02 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related structures |
US9087699B2 (en) | 2012-10-05 | 2015-07-21 | Micron Technology, Inc. | Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure |
CN104823265A (en) * | 2012-10-31 | 2015-08-05 | Sba材料有限公司 | Compositions of low-K dielectric sols containing nonmetallic catalysts |
US9229328B2 (en) | 2013-05-02 | 2016-01-05 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related semiconductor device structures |
DE102013107240A1 (en) * | 2013-07-09 | 2015-01-15 | Institut Für Verbundwerkstoffe Gmbh | Mixture for the production of nanoparticles of silicon dioxide, use of such a mixture, methods for the production of nanoparticles of silicon dioxide, use of nanoparticles made of silicon dioxide and nanoparticles made of silicon dioxide produced by the method |
US10170297B2 (en) | 2013-08-22 | 2019-01-01 | Versum Materials Us, Llc | Compositions and methods using same for flowable oxide deposition |
US9177795B2 (en) | 2013-09-27 | 2015-11-03 | Micron Technology, Inc. | Methods of forming nanostructures including metal oxides |
CN108084379B (en) * | 2017-12-21 | 2021-01-15 | 西安交通大学 | Preparation method of POSS (polyhedral oligomeric silsesquioxane) based multi-arm block copolymer for cultural relic bonding protection |
CN110330235B (en) * | 2019-06-11 | 2021-10-01 | 惠科股份有限公司 | Porous silicon dioxide film, preparation method thereof and display panel |
TWI798884B (en) * | 2020-10-20 | 2023-04-11 | 美商慧盛材料美國責任有限公司 | Alkoxydisiloxanes and dense organosilica films made therefrom |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09143420A (en) | 1995-09-21 | 1997-06-03 | Asahi Glass Co Ltd | Resin composition having low dielectric constant |
US6468642B1 (en) * | 1995-10-03 | 2002-10-22 | N.V. Bekaert S.A. | Fluorine-doped diamond-like coatings |
US6051321A (en) * | 1997-10-24 | 2000-04-18 | Quester Technology, Inc. | Low dielectric constant materials and method |
US6126733A (en) | 1997-10-31 | 2000-10-03 | Alliedsignal Inc. | Alcohol based precursors for producing nanoporous silica thin films |
DK199800404U3 (en) | 1998-10-28 | 1999-07-09 | Joergen Holberg Fenger | CD system |
US6329017B1 (en) | 1998-12-23 | 2001-12-11 | Battelle Memorial Institute | Mesoporous silica film from a solution containing a surfactant and methods of making same |
JP2001049179A (en) | 1999-06-01 | 2001-02-20 | Jsr Corp | Film-forming composition, formation of film and low- density film |
JP2001048977A (en) | 1999-08-12 | 2001-02-20 | Jsr Corp | Purification of polyalkylene oxide derivative, film- forming composition, method for forming film and low- density film |
GB2358733A (en) | 1999-08-30 | 2001-08-01 | Lucent Technologies Inc | Integrated circuit with multi-layer dielectric having reduced capacitance |
US6410151B1 (en) | 1999-09-29 | 2002-06-25 | Jsr Corporation | Composition for film formation, method of film formation, and insulating film |
US6410150B1 (en) | 1999-09-29 | 2002-06-25 | Jsr Corporation | Composition for film formation, method of film formation, and insulating film |
JP2001115021A (en) | 1999-10-18 | 2001-04-24 | Asahi Kasei Corp | Silica precursor/organic polymer composition |
US6592980B1 (en) | 1999-12-07 | 2003-07-15 | Air Products And Chemicals, Inc. | Mesoporous films having reduced dielectric constants |
JP2001203197A (en) | 2000-01-21 | 2001-07-27 | Jsr Corp | Membrane and forming method thereof |
US6902771B2 (en) * | 2000-02-01 | 2005-06-07 | Jsr Corporation | Process for producing silica-based film, silica-based film, insulating film, and semiconductor device |
DE60138327D1 (en) | 2000-02-28 | 2009-05-28 | Jsr Corp | Film-making composition, film-forming method and silica-based film |
US6329107B1 (en) | 2000-03-15 | 2001-12-11 | International Business Machines Corporation | Method of characterizing partial coherent light illumination and its application to serif mask design |
US6576300B1 (en) * | 2000-03-20 | 2003-06-10 | Dow Corning Corporation | High modulus, low dielectric constant coatings |
US6558755B2 (en) | 2000-03-20 | 2003-05-06 | Dow Corning Corporation | Plasma curing process for porous silica thin film |
EP1317775A4 (en) * | 2000-03-20 | 2009-01-28 | Bekaert Sa Nv | Materials having low dielectric constants and methods of making |
US6576568B2 (en) | 2000-04-04 | 2003-06-10 | Applied Materials, Inc. | Ionic additives for extreme low dielectric constant chemical formulations |
JP4117440B2 (en) | 2000-04-10 | 2008-07-16 | Jsr株式会社 | Method for producing film-forming composition, film-forming composition, film-forming method, and silica-based film |
US6838068B2 (en) | 2000-06-30 | 2005-01-04 | Mitsubishi Chemical Corporation | Silica gel |
JP2002173641A (en) | 2000-09-29 | 2002-06-21 | Asahi Kasei Corp | Porous silica thin film for insulation thin film |
JP4889896B2 (en) | 2000-11-09 | 2012-03-07 | バッテル メモリアル インスティテュート | Vacuum / gas phase reactor for dehydroxylation and alkylation of porous silica |
US6583048B2 (en) | 2001-01-17 | 2003-06-24 | Air Products And Chemicals, Inc. | Organosilicon precursors for interlayer dielectric films with low dielectric constants |
US6656837B2 (en) * | 2001-10-11 | 2003-12-02 | Applied Materials, Inc. | Method of eliminating photoresist poisoning in damascene applications |
JP2003142476A (en) | 2001-11-01 | 2003-05-16 | Asahi Kasei Corp | Porous silica thin film for insulation thin film |
JP3966026B2 (en) | 2002-03-06 | 2007-08-29 | 日立化成工業株式会社 | Silica-based film forming composition, silica-based film and method for producing the same, and electronic component |
US6846515B2 (en) | 2002-04-17 | 2005-01-25 | Air Products And Chemicals, Inc. | Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants |
US6936551B2 (en) * | 2002-05-08 | 2005-08-30 | Applied Materials Inc. | Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices |
US7122880B2 (en) * | 2002-05-30 | 2006-10-17 | Air Products And Chemicals, Inc. | Compositions for preparing low dielectric materials |
-
2002
- 2002-05-30 US US10/158,511 patent/US7307343B2/en not_active Expired - Lifetime
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2003
- 2003-05-26 IL IL183717A patent/IL183717A0/en unknown
- 2003-05-26 IL IL156107A patent/IL156107A/en not_active IP Right Cessation
- 2003-05-26 IL IL183716A patent/IL183716A0/en unknown
- 2003-05-27 EP EP20030011179 patent/EP1369907A3/en not_active Withdrawn
- 2003-05-29 SG SG200303676-1A patent/SG130010A1/en unknown
- 2003-05-30 CN CNB031413242A patent/CN1303619C/en not_active Expired - Fee Related
- 2003-05-30 TW TW92114847A patent/TWI261543B/en not_active IP Right Cessation
- 2003-05-30 CN CNA2007100038831A patent/CN1983461A/en active Pending
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Also Published As
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JP2006229201A (en) | 2006-08-31 |
IL156107A (en) | 2008-12-29 |
JP4125637B2 (en) | 2008-07-30 |
US7307343B2 (en) | 2007-12-11 |
SG130010A1 (en) | 2007-03-20 |
TWI261543B (en) | 2006-09-11 |
CN1497613A (en) | 2004-05-19 |
CN1303619C (en) | 2007-03-07 |
IL183716A0 (en) | 2007-09-20 |
KR20040030216A (en) | 2004-04-09 |
US7186613B2 (en) | 2007-03-06 |
IL183717A0 (en) | 2007-09-20 |
US20050116346A1 (en) | 2005-06-02 |
TW200408535A (en) | 2004-06-01 |
JP2004134738A (en) | 2004-04-30 |
US20030224156A1 (en) | 2003-12-04 |
CN1983461A (en) | 2007-06-20 |
EP1369907A2 (en) | 2003-12-10 |
EP1369907A3 (en) | 2004-10-27 |
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