IL155536A0 - Voltage tunable integrated infrared imager - Google Patents
Voltage tunable integrated infrared imagerInfo
- Publication number
- IL155536A0 IL155536A0 IL15553603A IL15553603A IL155536A0 IL 155536 A0 IL155536 A0 IL 155536A0 IL 15553603 A IL15553603 A IL 15553603A IL 15553603 A IL15553603 A IL 15553603A IL 155536 A0 IL155536 A0 IL 155536A0
- Authority
- IL
- Israel
- Prior art keywords
- infrared imager
- integrated infrared
- voltage tunable
- tunable integrated
- voltage
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
- H01L27/14652—Multispectral infrared imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
- H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IL15553603A IL155536A0 (en) | 2003-04-21 | 2003-04-21 | Voltage tunable integrated infrared imager |
PCT/IL2004/000337 WO2004095830A2 (fr) | 2003-04-21 | 2004-04-20 | Imageur infrarouge integre a tension selective |
US10/554,113 US20070063219A1 (en) | 2003-04-21 | 2004-04-20 | Voltage tunable integrated infrared imager |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IL15553603A IL155536A0 (en) | 2003-04-21 | 2003-04-21 | Voltage tunable integrated infrared imager |
Publications (1)
Publication Number | Publication Date |
---|---|
IL155536A0 true IL155536A0 (en) | 2003-11-23 |
Family
ID=32697065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL15553603A IL155536A0 (en) | 2003-04-21 | 2003-04-21 | Voltage tunable integrated infrared imager |
Country Status (3)
Country | Link |
---|---|
US (1) | US20070063219A1 (fr) |
IL (1) | IL155536A0 (fr) |
WO (1) | WO2004095830A2 (fr) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
CN100438085C (zh) * | 2005-01-25 | 2008-11-26 | 中国科学院半导体研究所 | 一种基于半导体光存储器单元的光探测器和光摄像单元 |
US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US8692198B2 (en) * | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
CN103081128B (zh) | 2010-06-18 | 2016-11-02 | 西奥尼克斯公司 | 高速光敏设备及相关方法 |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
CN103946867A (zh) | 2011-07-13 | 2014-07-23 | 西奥尼克斯公司 | 生物计量成像装置和相关方法 |
US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
IL220675B (en) * | 2012-06-28 | 2019-10-31 | Elta Systems Ltd | phototransistor |
TWI455354B (zh) * | 2012-07-05 | 2014-10-01 | Univ Nat Central | Homogeneous junction type of high speed photodiode |
WO2014151093A1 (fr) | 2013-03-15 | 2014-09-25 | Sionyx, Inc. | Imagerie tridimensionnelle utilisant des dispositifs imageurs empilés et procédés associés |
WO2014209421A1 (fr) | 2013-06-29 | 2014-12-31 | Sionyx, Inc. | Régions texturées formées de tranchées peu profondes et procédés associés. |
US9685477B2 (en) * | 2014-09-22 | 2017-06-20 | Teledyne Scientific & Imaging, Llc | Two-terminal multi-mode detector |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5329136A (en) * | 1993-04-30 | 1994-07-12 | At&T Bell Laboratories | Voltage-tunable photodetector |
CA2127596C (fr) * | 1993-07-16 | 2003-12-02 | Hui Chun Liu | Photodetecteur d'infrarouge multicouleur a puits quantiques accordables par la tension et methode de detection connexe |
DE19538650C2 (de) * | 1995-10-17 | 1997-08-28 | Fraunhofer Ges Forschung | Halbleiterheterostruktur-Strahlungsdetektor, mit zwei spektralen Empfindlichkeitsbereichen |
DE69738594T2 (de) * | 1996-07-19 | 2009-04-16 | National Research Council Of Canada, Ottawa | Bildwandlerpanel und zugehörige verfahren |
KR19980050460A (ko) * | 1996-12-20 | 1998-09-15 | 양승택 | 다중 파장 동시 인식을 위한 광검출기 구조 및 그를 이용한 광검출방법 |
JP2001044453A (ja) * | 1999-07-30 | 2001-02-16 | Fujitsu Ltd | 光検出素子 |
US6323941B1 (en) * | 1999-08-06 | 2001-11-27 | Lockheed Martin Corporation | Sensor assembly for imaging passive infrared and active LADAR and method for same |
US6469358B1 (en) * | 2000-09-21 | 2002-10-22 | Lockheed Martin Corporation | Three color quantum well focal plane arrays |
US6495830B1 (en) * | 2000-09-21 | 2002-12-17 | Lockheed Martin Corporation | Programmable hyper-spectral infrared focal plane arrays |
-
2003
- 2003-04-21 IL IL15553603A patent/IL155536A0/xx unknown
-
2004
- 2004-04-20 US US10/554,113 patent/US20070063219A1/en not_active Abandoned
- 2004-04-20 WO PCT/IL2004/000337 patent/WO2004095830A2/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2004095830A3 (fr) | 2004-12-16 |
WO2004095830A2 (fr) | 2004-11-04 |
US20070063219A1 (en) | 2007-03-22 |
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