IL140587A0 - External cavity laser - Google Patents

External cavity laser

Info

Publication number
IL140587A0
IL140587A0 IL14058798A IL14058798A IL140587A0 IL 140587 A0 IL140587 A0 IL 140587A0 IL 14058798 A IL14058798 A IL 14058798A IL 14058798 A IL14058798 A IL 14058798A IL 140587 A0 IL140587 A0 IL 140587A0
Authority
IL
Israel
Prior art keywords
external cavity
cavity laser
laser
external
cavity
Prior art date
Application number
IL14058798A
Other languages
English (en)
Original Assignee
Bookham Technology Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bookham Technology Plc filed Critical Bookham Technology Plc
Publication of IL140587A0 publication Critical patent/IL140587A0/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02407Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/02325Mechanically integrated components on mount members or optical micro-benches
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262Photo-diodes, e.g. transceiver devices, bidirectional devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • H01S5/0421Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255Controlling the frequency of the radiation
    • H01S5/06256Controlling the frequency of the radiation with DBR-structure
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/10Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • H01S5/02251Out-coupling of light using optical fibres
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers
    • H01S5/141External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)
IL14058798A 1998-07-10 1998-12-02 External cavity laser IL140587A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9815070A GB2325334B (en) 1998-07-10 1998-07-10 External cavity laser
PCT/GB1998/003595 WO2000003461A1 (en) 1998-07-10 1998-12-02 External cavity laser

Publications (1)

Publication Number Publication Date
IL140587A0 true IL140587A0 (en) 2002-02-10

Family

ID=10835357

Family Applications (1)

Application Number Title Priority Date Filing Date
IL14058798A IL140587A0 (en) 1998-07-10 1998-12-02 External cavity laser

Country Status (11)

Country Link
US (1) US6101210A (xx)
EP (1) EP1097394B1 (xx)
JP (1) JP2002520858A (xx)
KR (1) KR20010071852A (xx)
CN (1) CN1309827A (xx)
AU (1) AU1344299A (xx)
CA (1) CA2336981A1 (xx)
DE (1) DE69808342T2 (xx)
GB (1) GB2325334B (xx)
IL (1) IL140587A0 (xx)
WO (1) WO2000003461A1 (xx)

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100277695B1 (ko) * 1998-09-12 2001-02-01 정선종 에스 오 아이 광도파로를 이용한 하이브리드 광집적회로용 기판 제조방법
US6330388B1 (en) 1999-01-27 2001-12-11 Northstar Photonics, Inc. Method and apparatus for waveguide optics and devices
US6278721B1 (en) * 1999-03-03 2001-08-21 Lucent Technologies, Inc. Method for minimizing locking range variability of a laser module
GB2353898A (en) * 1999-08-25 2001-03-07 Bookham Technology Ltd A semiconductor laser amplifier using waveguides
JP4103287B2 (ja) * 2000-02-14 2008-06-18 横河電機株式会社 Dfbレーザ駆動装置、dfbレーザ駆動方法、及び記憶媒体
US6661945B2 (en) 2000-04-28 2003-12-09 Kaiser Optical Systems, Inc. Multi-band wavelength dispersive device for use in dense wavelength division multiplexing (DWDM) networks
US6888863B1 (en) 2000-06-30 2005-05-03 Lucent Technologies Inc. System comprising optical semiconductor waveguide device
US6525864B1 (en) 2000-07-20 2003-02-25 Nayna Networks, Inc. Integrated mirror array and circuit device
US20020037025A1 (en) * 2000-09-25 2002-03-28 Bartman Randall K. Hybrid narrow -linewidth semiconductor lasers
WO2002042803A2 (en) * 2000-11-27 2002-05-30 Northstar Photonics, Inc. Apparatus and method for integrated photonic devices
US6690687B2 (en) * 2001-01-02 2004-02-10 Spectrasensors, Inc. Tunable semiconductor laser having cavity with ring resonator mirror and mach-zehnder interferometer
WO2002065600A2 (en) * 2001-02-14 2002-08-22 Gemfire Corporation Multi-channel laser pump source and packaging method therefor
US20020110328A1 (en) * 2001-02-14 2002-08-15 Bischel William K. Multi-channel laser pump source for optical amplifiers
US6771851B1 (en) 2001-06-19 2004-08-03 Nayna Networks Fast switching method for a micro-mirror device for optical switching applications
US6941043B1 (en) * 2001-07-10 2005-09-06 K2 Optronics, Inc. Wavelength stabilization of an external cavity laser diode (ECLD)
GB2378811A (en) * 2001-08-16 2003-02-19 Bookham Technology Plc A Laser System
JP5099948B2 (ja) * 2001-08-28 2012-12-19 古河電気工業株式会社 分布帰還型半導体レーザ素子
US6987784B2 (en) * 2001-09-10 2006-01-17 San Jose Systems, Inc. Wavelength agile laser
US7092419B2 (en) 2001-09-10 2006-08-15 San Jose Systems, Inc. Wavelength agile laser
CA2463278C (en) * 2001-10-09 2013-04-02 Infinera Corporation Transmitter photonic integrated circuits (txpic) and optical transport networks employing txpics
US7672546B2 (en) * 2001-10-09 2010-03-02 Infinera Corporation Optical transport network having a plurality of monolithic photonic integrated circuit semiconductor chips
US7751658B2 (en) * 2001-10-09 2010-07-06 Infinera Corporation Monolithic transmitter photonic integrated circuit (TxPIC) having tunable modulated sources with feedback system for source power level or wavelength tuning
US20080044128A1 (en) * 2001-10-09 2008-02-21 Infinera Corporation TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TxPICs) AND OPTICAL TRANSPORT NETWORK SYSTEM EMPLOYING TxPICs
US20040020896A1 (en) * 2002-02-15 2004-02-05 Lockheed Martin Corporation Tapered optical fiber for fiber to waveguide interconnection
US20030185514A1 (en) * 2002-03-29 2003-10-02 Bendett Mark P. Method and apparatus for tapping a waveguide on a substrate
SE524828C2 (sv) * 2002-06-06 2004-10-12 Alfa Exx Ab Resonator
US6788727B2 (en) * 2002-06-13 2004-09-07 Intel Corporation Method and apparatus for tunable wavelength conversion using a bragg grating and a laser in a semiconductor substrate
DE10240949A1 (de) * 2002-09-02 2004-03-04 Hentze-Lissotschenko Patentverwaltungs Gmbh & Co.Kg Halbleiterlaservorrichtung
US7747114B2 (en) * 2002-10-08 2010-06-29 Infinera Corporation Tilted combiners/decombiners and photonic integrated circuits (PICs) employing the same
WO2004034530A1 (en) * 2002-10-08 2004-04-22 Infinera Corporation TRANSMITTER PHOTONIC INTEGRATED CIRCUIT (TxPIC) CHIPS
GB0306634D0 (en) * 2003-03-22 2003-04-30 Qinetiq Ltd Optical wavelength division multiplexer/demultiplexer device
US20050025420A1 (en) * 2003-06-30 2005-02-03 Mina Farr Optical sub-assembly laser mount having integrated microlens
US7422377B2 (en) * 2003-06-30 2008-09-09 Finisar Corporation Micro-module with micro-lens
US7327771B2 (en) * 2003-10-21 2008-02-05 Electronics And Telecommunications Research Institute WDM-PON system with optical wavelength alignment function
US7228030B2 (en) * 2004-03-29 2007-06-05 Intel Corporation Method and apparatus providing an output coupler for an optical beam
KR100626656B1 (ko) * 2005-05-04 2006-09-25 한국전자통신연구원 파장 분할 다중 방식의 수동형 광 가입자 망의 기지국 측광 송신기 및 그의 제작 방법
US20060002443A1 (en) * 2004-06-30 2006-01-05 Gennady Farber Multimode external cavity semiconductor lasers
DE102004050118A1 (de) * 2004-07-30 2006-03-23 Osram Opto Semiconductors Gmbh Halbleiterlaserbauelement, optische Vorrichtung für ein Halbleiterlaserbauelement und Verfahren zur Herstellung einer optischen Vorrichtung
US7565084B1 (en) 2004-09-15 2009-07-21 Wach Michael L Robustly stabilizing laser systems
KR100647904B1 (ko) 2004-12-20 2006-11-23 한국전자통신연구원 광섬유 브라그 격자 외부 공진기를 갖는 레이저의제조방법 및 이에 의해 제조된 레이저
US20070041679A1 (en) * 2005-07-01 2007-02-22 Zhaoran Huang Integrated thin film MSM photodetector/grating for WDM
KR100697606B1 (ko) * 2005-10-05 2007-03-22 주식회사 두산 곡면의 반사 거울면을 포함하는 광 도파로 및 그 제조 방법
US20070280326A1 (en) * 2005-12-16 2007-12-06 Sioptical, Inc. External cavity laser in thin SOI with monolithic electronics
US20080088928A1 (en) * 2006-10-13 2008-04-17 Kaiser Optical Systems Optical configurations for achieving uniform channel spacing in wdm telecommunications applications
FR2909491B1 (fr) 2006-12-05 2010-04-23 Commissariat Energie Atomique Dispositif laser a source laser et guide d'onde couples
JP2008158440A (ja) * 2006-12-26 2008-07-10 Toshiba Corp 光電気配線板及び光電気配線装置の製造方法
KR101038264B1 (ko) * 2009-06-12 2011-06-01 (주)엠이엘 외부공진형 파장가변 레이저 모듈
US8559470B2 (en) * 2009-10-13 2013-10-15 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser and a phase modulator
US8630326B2 (en) 2009-10-13 2014-01-14 Skorpios Technologies, Inc. Method and system of heterogeneous substrate bonding for photonic integration
US8605766B2 (en) * 2009-10-13 2013-12-10 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser and a mach zehnder modulator
WO2011046898A1 (en) * 2009-10-13 2011-04-21 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser
US11181688B2 (en) 2009-10-13 2021-11-23 Skorpios Technologies, Inc. Integration of an unprocessed, direct-bandgap chip into a silicon photonic device
US8611388B2 (en) 2009-10-13 2013-12-17 Skorpios Technologies, Inc. Method and system for heterogeneous substrate bonding of waveguide receivers
US8368995B2 (en) 2009-10-13 2013-02-05 Skorpios Technologies, Inc. Method and system for hybrid integration of an opto-electronic integrated circuit
US8867578B2 (en) * 2009-10-13 2014-10-21 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser for a cable TV transmitter
US8615025B2 (en) * 2009-10-13 2013-12-24 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser
US9316785B2 (en) 2013-10-09 2016-04-19 Skorpios Technologies, Inc. Integration of an unprocessed, direct-bandgap chip into a silicon photonic device
US9923105B2 (en) 2013-10-09 2018-03-20 Skorpios Technologies, Inc. Processing of a direct-bandgap chip after bonding to a silicon photonic device
US8270791B2 (en) * 2010-10-05 2012-09-18 Tdk Corporation Optical waveguide and thermally-assisted magnetic recording head therewith
US9922967B2 (en) 2010-12-08 2018-03-20 Skorpios Technologies, Inc. Multilevel template assisted wafer bonding
US9379515B1 (en) 2011-02-10 2016-06-28 Mellanox Technologies Silicon Photonics Inc. Laser combining light signals from multiple laser cavities
FR2973594B1 (fr) * 2011-03-31 2013-03-29 Thales Sa Systeme d'emission de signal optique
US9977188B2 (en) 2011-08-30 2018-05-22 Skorpios Technologies, Inc. Integrated photonics mode expander
WO2013036955A1 (en) 2011-09-08 2013-03-14 Skorpios Technologies, Inc. Tunable reflectors based on multi-cavity interference
WO2013055396A1 (en) * 2011-10-14 2013-04-18 Kotura, Inc. Reduction of mode hopping in a laser cavity
CN102565955B (zh) * 2012-01-16 2013-03-20 中国科学院半导体研究所 电可调谐光栅耦合器
GB2522410A (en) * 2014-01-20 2015-07-29 Rockley Photonics Ltd Tunable SOI laser
GB2522252B (en) * 2014-01-20 2016-04-20 Rockley Photonics Ltd Tunable SOI laser
US9664855B2 (en) 2014-03-07 2017-05-30 Skorpios Technologies, Inc. Wide shoulder, high order mode filter for thick-silicon waveguides
US10003173B2 (en) 2014-04-23 2018-06-19 Skorpios Technologies, Inc. Widely tunable laser control
EP3149522A4 (en) 2014-05-27 2018-02-21 Skorpios Technologies, Inc. Waveguide mode expander using amorphous silicon
WO2016073506A1 (en) * 2014-11-05 2016-05-12 Coriant Advanced Technology, LLC Photonic integrated circuit incorporating a bandgap temperature sensor
US9513437B2 (en) 2014-11-05 2016-12-06 Coriant Advanced Technology, LLC Photonic integrated circuit incorporating a bandgap temperature sensor
US9356419B1 (en) 2015-04-09 2016-05-31 International Business Machines Corporation Temperature insensitive external cavity lasers on silicon
US9829631B2 (en) 2015-04-20 2017-11-28 Skorpios Technologies, Inc. Vertical output couplers for photonic devices
CN105428998B (zh) * 2015-12-28 2019-05-17 中国科学院半导体研究所 外腔窄线宽激光器
GB2547467A (en) 2016-02-19 2017-08-23 Rockley Photonics Ltd Tunable laser
US11699892B2 (en) 2016-02-19 2023-07-11 Rockley Photonics Limited Discrete wavelength tunable laser
GB2554653B (en) 2016-09-30 2021-12-29 Lumentum Tech Uk Limited Lockerless tuneable DBR laser
US10811848B2 (en) 2017-06-14 2020-10-20 Rockley Photonics Limited Broadband arbitrary wavelength multichannel laser source
US10649148B2 (en) 2017-10-25 2020-05-12 Skorpios Technologies, Inc. Multistage spot size converter in silicon photonics
US11360263B2 (en) 2019-01-31 2022-06-14 Skorpios Technologies. Inc. Self-aligned spot size converter
CN111323879A (zh) * 2020-04-13 2020-06-23 易锐光电科技(安徽)有限公司 光模块
US20230072926A1 (en) * 2021-09-03 2023-03-09 Freedom Photonics Llc Multiwavelength optical sources

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2572050B2 (ja) * 1986-11-05 1997-01-16 シャープ株式会社 導波路型光ヘツド
US5537432A (en) * 1993-01-07 1996-07-16 Sdl, Inc. Wavelength-stabilized, high power semiconductor laser
US6064783A (en) * 1994-05-25 2000-05-16 Congdon; Philip A. Integrated laser and coupled waveguide
JPH10148726A (ja) * 1996-11-19 1998-06-02 Mitsubishi Electric Corp 光導波路型グレーティングおよびその製法ならびに前記光導波路型グレーティングを用いた光フィルタおよび該光フィルタを用いた波長多重光伝送システム
GB2320104B (en) * 1997-10-16 1998-11-18 Bookham Technology Ltd Thermally isolated silicon layer

Also Published As

Publication number Publication date
EP1097394A1 (en) 2001-05-09
US6101210A (en) 2000-08-08
AU1344299A (en) 2000-02-01
DE69808342T2 (de) 2003-05-22
JP2002520858A (ja) 2002-07-09
EP1097394B1 (en) 2002-09-25
GB9815070D0 (en) 1998-09-09
CA2336981A1 (en) 2000-01-20
DE69808342D1 (de) 2002-10-31
KR20010071852A (ko) 2001-07-31
CN1309827A (zh) 2001-08-22
GB2325334B (en) 1999-04-14
GB2325334A (en) 1998-11-18
WO2000003461A1 (en) 2000-01-20

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