IL137336A0 - Diamond semiconductor and method for the fabrication thereof - Google Patents
Diamond semiconductor and method for the fabrication thereofInfo
- Publication number
- IL137336A0 IL137336A0 IL13733600A IL13733600A IL137336A0 IL 137336 A0 IL137336 A0 IL 137336A0 IL 13733600 A IL13733600 A IL 13733600A IL 13733600 A IL13733600 A IL 13733600A IL 137336 A0 IL137336 A0 IL 137336A0
- Authority
- IL
- Israel
- Prior art keywords
- fabrication
- diamond semiconductor
- diamond
- semiconductor
- Prior art date
Links
- 229910003460 diamond Inorganic materials 0.000 title 1
- 239000010432 diamond Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
- H01L21/041—Making n- or p-doped regions
- H01L21/0415—Making n- or p-doped regions using ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1602—Diamond
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11206858A JP2001035804A (ja) | 1999-07-21 | 1999-07-21 | ダイヤモンド半導体およびその作製方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
IL137336A0 true IL137336A0 (en) | 2001-07-24 |
Family
ID=16530222
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL13733600A IL137336A0 (en) | 1999-07-21 | 2000-07-17 | Diamond semiconductor and method for the fabrication thereof |
Country Status (5)
Country | Link |
---|---|
US (1) | US6756086B2 (fr) |
EP (1) | EP1071141A3 (fr) |
JP (1) | JP2001035804A (fr) |
IL (1) | IL137336A0 (fr) |
ZA (1) | ZA200003708B (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7402835B2 (en) * | 2002-07-18 | 2008-07-22 | Chevron U.S.A. Inc. | Heteroatom-containing diamondoid transistors |
JP2004214264A (ja) * | 2002-12-27 | 2004-07-29 | Sumitomo Electric Ind Ltd | 低抵抗n型半導体ダイヤモンドおよびその製造方法 |
KR20060122868A (ko) * | 2003-11-25 | 2006-11-30 | 스미토모덴키고교가부시키가이샤 | 다이아몬드 n형 반도체, 그의 제조 방법, 반도체 소자 및전자 방출 소자 |
KR100644929B1 (ko) * | 2004-03-04 | 2006-11-13 | 한국원자력연구소 | 이온주입과 열처리에 의한 발색된 다이아몬드의 제조방법 |
US20060017055A1 (en) * | 2004-07-23 | 2006-01-26 | Eastman Kodak Company | Method for manufacturing a display device with low temperature diamond coatings |
JP2007078373A (ja) * | 2005-09-12 | 2007-03-29 | National Institute Of Advanced Industrial & Technology | ISFETからなるpHセンサー及びその製造方法 |
CN108707874B (zh) * | 2018-06-07 | 2019-06-28 | 大连理工大学 | 一种金刚石薄膜表面石墨化的方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07105353B2 (ja) | 1987-06-02 | 1995-11-13 | 住友電気工業株式会社 | 半導体ダイヤモンド及びその製造方法 |
US5051785A (en) * | 1989-06-22 | 1991-09-24 | Advanced Technology Materials, Inc. | N-type semiconducting diamond, and method of making the same |
US5075764A (en) * | 1989-06-22 | 1991-12-24 | Semiconductor Energy Laboratory Co., Ltd. | Diamond electric device and manufacturing method for the same |
US5298106A (en) * | 1991-07-08 | 1994-03-29 | The United States Of America As Represented By The Secretary Of The Navy | Method of doping single crystal diamond for electronic devices |
US5328855A (en) * | 1991-07-25 | 1994-07-12 | Matsushita Electric Industrial Co., Ltd. | Formation of semiconductor diamond |
JPH0597581A (ja) | 1991-09-17 | 1993-04-20 | Kawasaki Steel Corp | ダイヤモンド合成法及びそれに用いる合成装置 |
JPH05235407A (ja) * | 1991-12-13 | 1993-09-10 | De Beers Ind Diamond Div Ltd | ダイヤモンド発光素子 |
US5670788A (en) * | 1992-01-22 | 1997-09-23 | Massachusetts Institute Of Technology | Diamond cold cathode |
ZA933939B (en) * | 1992-06-05 | 1993-12-30 | De Beers Ind Diamond | Diamond doping |
USH1287H (en) * | 1992-06-16 | 1994-02-01 | The United States Of America As Represented By The Secretary Of The Navy | Ion implanted diamond metal-insulator-semiconductor field effect transistor |
US5653800A (en) * | 1995-08-03 | 1997-08-05 | Eneco, Inc. | Method for producing N-type semiconducting diamond |
DE19730083A1 (de) * | 1997-07-14 | 1999-01-21 | Rossendorf Forschzent | Verfahren zur gezielten Herstellung von n-leitenden Bereichen in Diamantschichten mittels Ionenimplantation |
DE19738512A1 (de) * | 1997-09-03 | 1999-02-18 | Daimler Benz Ag | Diamantschicht eines mikroelektronischen Bauteils und Verfahren zu deren Herstellung |
JP3125046B2 (ja) | 1997-11-21 | 2001-01-15 | 工業技術院長 | ダイヤモンド単結晶薄膜製造方法 |
US6414338B1 (en) * | 1998-11-30 | 2002-07-02 | Sandia National Laboratories | n-Type diamond and method for producing same |
JP2001064094A (ja) * | 1999-08-24 | 2001-03-13 | Sharp Corp | 半導体ダイヤモンドの製造方法 |
-
1999
- 1999-07-21 JP JP11206858A patent/JP2001035804A/ja active Pending
-
2000
- 2000-07-17 IL IL13733600A patent/IL137336A0/xx not_active IP Right Cessation
- 2000-07-18 EP EP00306108A patent/EP1071141A3/fr not_active Ceased
- 2000-07-21 ZA ZA200003708A patent/ZA200003708B/xx unknown
-
2002
- 2002-03-06 US US10/090,771 patent/US6756086B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2001035804A (ja) | 2001-02-09 |
US20020127405A1 (en) | 2002-09-12 |
EP1071141A3 (fr) | 2005-06-15 |
US6756086B2 (en) | 2004-06-29 |
EP1071141A2 (fr) | 2001-01-24 |
ZA200003708B (en) | 2001-02-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FF | Patent granted | ||
KB | Patent renewed | ||
KB | Patent renewed | ||
MM9K | Patent not in force due to non-payment of renewal fees |