IL137336A0 - Diamond semiconductor and method for the fabrication thereof - Google Patents

Diamond semiconductor and method for the fabrication thereof

Info

Publication number
IL137336A0
IL137336A0 IL13733600A IL13733600A IL137336A0 IL 137336 A0 IL137336 A0 IL 137336A0 IL 13733600 A IL13733600 A IL 13733600A IL 13733600 A IL13733600 A IL 13733600A IL 137336 A0 IL137336 A0 IL 137336A0
Authority
IL
Israel
Prior art keywords
fabrication
diamond semiconductor
diamond
semiconductor
Prior art date
Application number
IL13733600A
Other languages
English (en)
Original Assignee
Agency Ind Science Techn
Japan Science & Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency Ind Science Techn, Japan Science & Tech Corp filed Critical Agency Ind Science Techn
Publication of IL137336A0 publication Critical patent/IL137336A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/041—Making n- or p-doped regions
    • H01L21/0415—Making n- or p-doped regions using ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1602—Diamond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IL13733600A 1999-07-21 2000-07-17 Diamond semiconductor and method for the fabrication thereof IL137336A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11206858A JP2001035804A (ja) 1999-07-21 1999-07-21 ダイヤモンド半導体およびその作製方法

Publications (1)

Publication Number Publication Date
IL137336A0 true IL137336A0 (en) 2001-07-24

Family

ID=16530222

Family Applications (1)

Application Number Title Priority Date Filing Date
IL13733600A IL137336A0 (en) 1999-07-21 2000-07-17 Diamond semiconductor and method for the fabrication thereof

Country Status (5)

Country Link
US (1) US6756086B2 (fr)
EP (1) EP1071141A3 (fr)
JP (1) JP2001035804A (fr)
IL (1) IL137336A0 (fr)
ZA (1) ZA200003708B (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7402835B2 (en) * 2002-07-18 2008-07-22 Chevron U.S.A. Inc. Heteroatom-containing diamondoid transistors
JP2004214264A (ja) * 2002-12-27 2004-07-29 Sumitomo Electric Ind Ltd 低抵抗ｎ型半導体ダイヤモンドおよびその製造方法
KR20060122868A (ko) * 2003-11-25 2006-11-30 스미토모덴키고교가부시키가이샤 다이아몬드 ｎ형 반도체, 그의 제조 방법, 반도체 소자 및전자 방출 소자
KR100644929B1 (ko) * 2004-03-04 2006-11-13 한국원자력연구소 이온주입과 열처리에 의한 발색된 다이아몬드의 제조방법
US20060017055A1 (en) * 2004-07-23 2006-01-26 Eastman Kodak Company Method for manufacturing a display device with low temperature diamond coatings
JP2007078373A (ja) * 2005-09-12 2007-03-29 National Institute Of Advanced Industrial & Technology ＩＳＦＥＴからなるｐＨセンサー及びその製造方法
CN108707874B (zh) * 2018-06-07 2019-06-28 大连理工大学 一种金刚石薄膜表面石墨化的方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07105353B2 (ja) 1987-06-02 1995-11-13 住友電気工業株式会社 半導体ダイヤモンド及びその製造方法
US5051785A (en) * 1989-06-22 1991-09-24 Advanced Technology Materials, Inc. N-type semiconducting diamond, and method of making the same
US5075764A (en) * 1989-06-22 1991-12-24 Semiconductor Energy Laboratory Co., Ltd. Diamond electric device and manufacturing method for the same
US5298106A (en) * 1991-07-08 1994-03-29 The United States Of America As Represented By The Secretary Of The Navy Method of doping single crystal diamond for electronic devices
US5328855A (en) * 1991-07-25 1994-07-12 Matsushita Electric Industrial Co., Ltd. Formation of semiconductor diamond
JPH0597581A (ja) 1991-09-17 1993-04-20 Kawasaki Steel Corp ダイヤモンド合成法及びそれに用いる合成装置
JPH05235407A (ja) * 1991-12-13 1993-09-10 De Beers Ind Diamond Div Ltd ダイヤモンド発光素子
US5670788A (en) * 1992-01-22 1997-09-23 Massachusetts Institute Of Technology Diamond cold cathode
ZA933939B (en) * 1992-06-05 1993-12-30 De Beers Ind Diamond Diamond doping
USH1287H (en) * 1992-06-16 1994-02-01 The United States Of America As Represented By The Secretary Of The Navy Ion implanted diamond metal-insulator-semiconductor field effect transistor
US5653800A (en) * 1995-08-03 1997-08-05 Eneco, Inc. Method for producing N-type semiconducting diamond
DE19730083A1 (de) * 1997-07-14 1999-01-21 Rossendorf Forschzent Verfahren zur gezielten Herstellung von n-leitenden Bereichen in Diamantschichten mittels Ionenimplantation
DE19738512A1 (de) * 1997-09-03 1999-02-18 Daimler Benz Ag Diamantschicht eines mikroelektronischen Bauteils und Verfahren zu deren Herstellung
JP3125046B2 (ja) 1997-11-21 2001-01-15 工業技術院長 ダイヤモンド単結晶薄膜製造方法
US6414338B1 (en) * 1998-11-30 2002-07-02 Sandia National Laboratories n-Type diamond and method for producing same
JP2001064094A (ja) * 1999-08-24 2001-03-13 Sharp Corp 半導体ダイヤモンドの製造方法

Also Published As

Publication number Publication date
JP2001035804A (ja) 2001-02-09
US20020127405A1 (en) 2002-09-12
EP1071141A3 (fr) 2005-06-15
US6756086B2 (en) 2004-06-29
EP1071141A2 (fr) 2001-01-24
ZA200003708B (en) 2001-02-07

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Legal Events

Date Code Title Description
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KB Patent renewed
KB Patent renewed
MM9K Patent not in force due to non-payment of renewal fees